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    IXFK24N100 Search Results

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    IXFK24N100 Price and Stock

    Littelfuse Inc IXFK24N100Q3

    MOSFET N-CH 1000V 24A TO264AA
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    DigiKey IXFK24N100Q3 Tube 1,810 1
    • 1 $25.63
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    • 100 $17.8668
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    RS IXFK24N100Q3 Bulk 8 Weeks 25
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    IXYS Corporation IXFK24N100

    MOSFET N-CH 1KV 24A TO-264AA
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    DigiKey IXFK24N100 Tube 25
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    Mouser Electronics IXFK24N100
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    ComSIT USA IXFK24N100 21
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    IXYS Corporation IXFK24N100F

    MOSFET N-CH 1000V 24A TO264
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    DigiKey IXFK24N100F Tube 25
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    IXYS Corporation IXFK24N100Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A
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    Mouser Electronics IXFK24N100Q3 302
    • 1 $27.85
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    Newark IXFK24N100Q3 Bulk 101 1
    • 1 $26.66
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    TTI IXFK24N100Q3 Tube 300
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    TME IXFK24N100Q3 1
    • 1 $27.56
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    New Advantage Corporation IXFK24N100Q3 52 1
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    IXYS Integrated Circuits Division IXFK24N100Q3

    MOSFET DIS.24A 1000V N-CH TO264 HIPERFET THT
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    Ozdisan Elektronik IXFK24N100Q3 65
    • 1 $33.21376
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    • 100 $31.0409
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    IXFK24N100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK24N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFK24N100F IXYS 1000V HiPerRF power MOSFET Original PDF
    IXFK24N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 24A TO-264 Original PDF

    IXFK24N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFK24N100Q3 IXFX24N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    PDF IXFK24N100Q3 IXFX24N100Q3 300ns O-264 PLUS247 24N100Q3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK24N100Q3 IXFX24N100Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original
    PDF IXFK24N100Q3 IXFX24N100Q3 300ns O-264 24N100Q3

    IXFX24N100F

    Abstract: IXFK24N100F PLUS247
    Text: IXFK24N100F IXFX24N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 24A ID25 Ω RDS on ≤ 390mΩ trr ≤ 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions


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    PDF IXFK24N100F IXFX24N100F 250ns 247TM 00A/s, 338B2 IXFX24N100F IXFK24N100F PLUS247

    IXFX24N100

    Abstract: IXFK24N100 PLUS247
    Text: IXFK24N100 IXFX24N100 HiPerFETTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V


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    PDF IXFK24N100 IXFX24N100 250ns O-264 24N100 10-17-08-C IXFX24N100 IXFK24N100 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: VDSS = 1000V ID25 = 24A Ω RDS on ≤ 390mΩ ≤ 250ns trr IXFK24N100F IXFX24N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions


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    PDF 250ns IXFK24N100F IXFX24N100F 247TM 338B2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFK24N100 IXFX24N100 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V


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    PDF IXFK24N100 IXFX24N100 250ns O-264 24N100 10-17-08-C

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


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    PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original
    PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    Untitled

    Abstract: No abstract text available
    Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G


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    PDF 24N100 247TM IXFK24N100/IXFX24N100 405B2

    ixfk24n100

    Abstract: No abstract text available
    Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM


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    PDF 24N100 247TM IXFK24N100/IXFX24N100 405B2 ixfk24n100

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


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    PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original
    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


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    PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    24N10

    Abstract: No abstract text available
    Text: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C


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    PDF IXFK24N100 24N100 to150 24N10

    TO-264 weight

    Abstract: No abstract text available
    Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038


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    PDF IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


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    PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


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    PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90