D004 power ic
Abstract: 72B4
Text: > « Y U N D A I H Y ? 1 „D lDA 1 2 B K X B - b lt .S e r i e s CM OS SRAM PRELIMINARY DESCRIPTION The HY6ZB100A is a h ig h -s p e e d , law p o w s r an d 131,072 x B-bils CMOS s tatic RAM fabricated using Hyundai's h ig h p e rfo rm a n c e twin lu b CMOS p ro c e s s te c h n o lo g y . This high reliability p ro c e s s c uup lB d with in novativB circuit
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HY6ZB100A
HY62B1D0A
050fl|
1DD02-11-MAYS4
HY62B1DDA
HY62B100ALP
HY5201DOALLP
HYS281DOAG
HYB281D0ALG
HY62B1DCALLG
D004 power ic
72B4
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5331m
Abstract: No abstract text available
Text: •HYUNDAI H Y 52 B1 OOA-I S e rie s 1 2 0 K Jl B - b l t CM D 5 SRAM PRELIMINARY DESCRIPTION The HYB2B1DOA-I is a high-speed, low power and 131,D72 a B-bils CMOS static RAM fabricated using Hyundai's high pBrform anca twin tub CMOS process technology. This high reliability process couplBd with Innovative circuit
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HY52B1
HY62B1
002IQ
1DD03-11-MAYB4
HY52B1D
HY62B1DOALP-I
HY6ZB100ALLP-I
HY52B1DOALG-I
HY52B1DOALLG-I
HY62B1DOALTM
5331m
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