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    DQ4-21

    Abstract: No abstract text available
    Text: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process


    OCR Scan     		PDF 1x10s HX6364 DQ4-21

    Untitled

    Abstract: No abstract text available
    Text: /V' HONEYùJELL/ S S E C 3ÔE D M551Ô75 0Q00S54 M I HÔN3 Military Products Advance Information HX6364 8K x 8 RADIATION-HARDENED STATIC RAM - SOI FEATURES RADIATIO N OTHER • Fabricated with RICMOS Silicon on Insulator SOI 1.2 ¡am Process • Access Tim e < 45 nsec (-55 to 125°C)


    OCR Scan     		PDF 0Q00S54 1x107 1x101 10upsets/cell-day 1x1013rad

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 nm Process Total Dose Hardness through 1x106 rad(Si02) • Full military temperature operation (-55°C to 125°C)


    OCR Scan     		PDF 1x106 1x101' 10upsets/bit-day HX6364