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Catalog Datasheet	MFG & Type	PDF	Document Tags
XP161A11A1PR Abstract: XP161A11A1PR-G marking 4a sot-89 Text: XP161A11A1PR-G ETR1122_003 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.	Original	PDF	XP161A11A1PR-G ETR1122 XP161A11A1PR-G OT-89 OT-89 XP161A11A1PR marking 4a sot-89
XP161A11A1PR Abstract: n-channel SOT-89 Text: XP161A11A1PR ETR1122_001 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.	Original	PDF	XP161A11A1PR ETR1122 XP161A11A1PR OT-89 n-channel SOT-89
N-channel Power MOSFET with low on-state resistance Abstract: XP161A11A1PR Text: XP161A11A1PR-G ETR1122_002 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.	Original	PDF	XP161A11A1PR-G ETR1122 XP161A11A1PR-G OT-89 N-channel Power MOSFET with low on-state resistance XP161A11A1PR
XP161A11A1PR Abstract: ultra low igss Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.105Ω MAX. ◆Gate Protect Diode Built-in ◆Ultra High-Speed Switching ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP161A11A1PR is an N-channel Power MOSFET with low	Original	PDF	OT-89 XP161A11A1PR XP161A11A1PR ultra low igss