BD951F Search Results

BD951F Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BD951F		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BD951F		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BD951F		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

BD951F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO111 Abstract: 2SD189 to-53 2SC647 2SD772B Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A	Original	PDF	2SD772 2SD772A 2SD772B CX702 BD951 BD952 SDT6012 TO111 2SD189 to-53 2SC647
951F Abstract: No abstract text available Text: BD949F; BD951F ^BD953F; BD955F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 950F, BD 952F, BD 9 5 4 F and BD 956F. Q U IC K R E F E R E N C E D A T A	OCR Scan	PDF	BD949F; BD951F BD953F; BD955F bb53T31 951F
bd955 Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F Text: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60	OCR Scan	PDF	BD949F; BD951F BD953F; BD955F BD950F, BD952F, BD954F BD956F. BD949F bd955 BD953F bd950 BD950F BD952F BD955F BD956F
HU09 Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.	OCR Scan	PDF	BD949F; BD951F BD953F; BD955F 7110fl2b 004310b OT186 BD950F, BD952F, BD954F HU09 bd955 BD953F BD949F BD950F BD952F BD955F BD956F
bd955 Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F Text: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.	OCR Scan	PDF	BD950F 004311b OT186 BD949F, BD951F, BD953F BD955F. BD950F bd955 BD955F 952F BD949F BD951F BD954F
952F Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F Text: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage	OCR Scan	PDF	BD950F; BD954F; OT186 BD949F, BD951F, BD953F BD955F. BD950FJ OT186. BD950F 952F bd955 BD949F BD951F BD954F BD955F 956F 954F
Untitled Abstract: No abstract text available Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.	OCR Scan	PDF	BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO
Untitled Abstract: No abstract text available Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.	OCR Scan	PDF	BD949F; BD951F BD953F; BD955F 7110fl2b 004310b 7110aEb QDM3107
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11