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    2SD189 Search Results

    2SD189 Result Highlights (5)

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    2SD1899-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SD1899(0)-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SD1899-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SD1899-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SD1899-Z-E2-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SD189 Price and Stock

    ROHM Semiconductor 2SD1898T100P

    TRANS NPN 80V 1A MPT3
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    ROHM Semiconductor 2SD1898T100Q

    TRANS NPN 80V 1A MPT3
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    Quest Components 2SD1898T100Q 425
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    ROHM Semiconductor 2SD1898T100R

    TRANS NPN 80V 1A MPT3
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    Mouser Electronics 2SD1898T100R 16
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    Verical 2SD1898T100R 3,142 44
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    New Advantage Corporation 2SD1898T100R 20,000 1
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    Micro Commercial Components 2SD1898-Q-TP

    Interface
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    Micro Commercial Components 2SD1899-K-TP

    TRANS NPN 60V 3A DPAK
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    Find more 2SD189 price and stock on Findchips.com

    2SD189 Datasheets (129)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD189 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD189 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD189 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD189 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD189 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD189 Unknown Cross Reference Datasheet Scan PDF
    2SD189 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD189 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD189 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD189 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD189 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD189 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1890 Panasonic Silicon NPN triple diffusion planar type Darlington Power Transistors Original PDF
    2SD1890 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1890 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1890 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1890 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1890 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1890 Panasonic Silicon NPN Triple Diffused Planar Power Transistors Scan PDF
    2SD1891 Panasonic Silicon NPN triple diffusion planar type Darlington Power Transistors Original PDF
    ...

    2SD189 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1255

    Abstract: 2SD1895
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895


    Original     		PDF 2SB1255 2SD1895 Collector100 -140V; 2SB1255 2SD1895

    2SB1254

    Abstract: 2SD1894
    Text: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS


    Original     		PDF 2SD1894 2SB1254 2SB1254 2SD1894

    2SD1733

    Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V


    Original     		PDF 2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1181 2SB1241 2SD1863 SC-72

    Untitled

    Abstract: No abstract text available
    Text: 2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2 3 D-PAK(TO-252) Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage


    Original     		PDF 2SD1899 O-252) 13-Oct-08 O-252 O-252

    2SB1293

    Abstract: 2SD1896
    Text: SavantIC Semiconductor Product Specification 2SB1293 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Complement to type 2SD1896 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier


    Original     		PDF 2SB1293 O-220C 2SD1896 O-220) -100V; 2SB1293 2SD1896

    2SB1253

    Abstract: 2SB1253 equivalent 2SD1893 equivalent 2SD1893
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -5A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD1893 APPLICATIONS


    Original     		PDF 2SD1893 -130V; -110V; 2SB1253 2SB1253 equivalent 2SD1893 equivalent 2SD1893

    2SB1255

    Abstract: 2SD1895
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS


    Original     		PDF 2SD1895 -160V; -140V; 2SB1255 2SD1895

    2SB1254

    Abstract: 2SD1894
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS


    Original     		PDF 2SD1894 -160V; -140V; 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-252 2SD1899

    2SB1255

    Abstract: 2SD1895
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000


    Original     		PDF 2SB1255 2SD1895 2SB1255 2SD1895

    2SD1898

    Abstract: 100MHZ
    Text: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B


    Original     		PDF 2SD1898 OT-89 2SD1898 500mA, 500mA 100MHZ 08-May-2007 100MHZ

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE


    Original     		PDF 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage


    Original     		PDF 2SD1891 2SB1251

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


    Original     		PDF 2SD1893 2SB1253

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL


    Original     		PDF 2SD1898 2SB1260. OT-89 200ms QW-R208-030

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A

    2SD1893

    Abstract: 2SD1893 equivalent 2SB1253
    Text: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


    Original     		PDF 2SD1893 2SB1253 2SD1893 2SD1893 equivalent 2SB1253

    2SB1253

    Abstract: 2SB1253 equivalent 2SD1893
    Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit –130 V –110 V Collector to base voltage


    Original     		PDF 2SB1253 2SD1893 2SB1253 2SB1253 equivalent 2SD1893

    2SB1252

    Abstract: 2SD1895
    Text: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t


    OCR Scan     		PDF 2SD1895 2SB1252 2SB1252 2SD1895

    toshiba 2sd425

    Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
    Text: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312


    OCR Scan     		PDF 2SD287 2SD287C 2SD288 2SD289 2SD425 2SD425 2SD313 2SD313 2SD880 toshiba 2sd425 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD1391 2SD867

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000


    OCR Scan     		PDF 2SD1895 2SB1252 i32flS2

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1


    OCR Scan     		PDF 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F)

    2SD1915

    Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
    Text: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915


    OCR Scan     		PDF EPHTc-25 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1912 2SB1274 2SD1915 T0-220MF 2SD1899-Z 2SB1255 2SD1907

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27