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    Microchip Technology Inc ARF473

    RF MOSFET 135V
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    ARF473 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ARF473 Advanced Power Technology RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE Original PDF
    ARF473 Advanced Power Technology RF POWER MOSFET Original PDF
    ARF473 Microsemi RF MOSFET (VDMOS) Original PDF

    ARF473 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Trimmer ARCO

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original     		PDF ARF473 ARF473 Trimmer ARCO

    Untitled

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 D AR F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original     		PDF ARF473 ARF473 100mS

    Untitled

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 AR F47 3 D G G RF POWER MOSFET S Flange D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original     		PDF ARF473 ARF473

    ARF473

    Abstract: No abstract text available
    Text: ARF473 Common Source Push-Pull Pair AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original     		PDF ARF473 ARF473

    Untitled

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. D AR F47 G G RF POWER MOSFET S (Flange) 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage


    Original     		PDF ARF473 100mS

    2643006302

    Abstract: 2643665902 ARF473 RF Amplifier 500w DF-47
    Text: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original     		PDF ARF473 ARF473 2643006302 2643665902 RF Amplifier 500w DF-47

    Mosfets

    Abstract: 100U ARF473 m068 D2150
    Text: * *SRC=ARF473;ARF473;MOSFETs N;Power >100V;APT 500V 10A 0.6ohm Gemini *SYM=POWMOSN .SUBCKT ARF473 10 20 30 * use two models as below for the dual part * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 0.284 RS 40 3 16M RG 20 2 .215 CGS 2 3 1.14N


    Original     		PDF ARF473 ARF473 04MEG Mosfets 100U m068 D2150

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF