fairchild to-220ab 75343P
Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75343G3,
HUF75343P3,
HUF75343S3S
fairchild to-220ab 75343P
75343p
75343G
75343S
HUF75343G3
HUF75343P3
HUF75343S3S
HUF75343S3ST
TA75343
TB334
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PDF
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75343P
Abstract: 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S
Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75343G3,
HUF75343P3,
HUF75343S3S
43oducts
75343P
75343G
4352
HUF75343G3
HUF75343P3
HUF75343S3S
HUF75343S3ST
TA75343
TB334
75343S
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PDF
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fairchild to-220ab 75343P
Abstract: 75343G 75343P 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST TA75343 TB334
Text: HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75343G3,
HUFA75343P3,
HUFA75343S3S
fairchild to-220ab 75343P
75343G
75343P
75343S
HUFA75343G3
HUFA75343P3
HUFA75343S3S
HUFA75343S3ST
TA75343
TB334
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PDF
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fairchild to-220ab 75343P
Abstract: 75343g 75343s 75343p HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343
Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding
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Original
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HUF75343G3,
HUF75343P3,
HUF75343S3,
HUF75343S3S
fairchild to-220ab 75343P
75343g
75343s
75343p
HUF75343G3
HUF75343P3
HUF75343S3
HUF75343S3S
HUF75343S3ST
TA75343
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PDF
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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Untitled
Abstract: No abstract text available
Text: HUFA75343G3, HUFA75343P3, HUFA75343S3S TM Data Sheet November 2000 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75343G3,
HUFA75343P3,
HUFA75343S3S
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PDF
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75343p
Abstract: fairchild to-220ab 75343P TA75343 75343 75343G 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST
Text: HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet November 2000 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75343G3,
HUFA75343P3,
HUFA75343S3S
75343p
fairchild to-220ab 75343P
TA75343
75343
75343G
75343S
HUFA75343G3
HUFA75343P3
HUFA75343S3S
HUFA75343S3ST
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PDF
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75343p
Abstract: 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343
Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75343G3,
HUF75343P3,
HUF75343S3S
75343p
75343G
fairchild to-220ab 75343P
HUF75343G3
75343
HUF75343p3
75343S
HUF75343S3S
HUF75343S3ST
TA75343
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PDF
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75343P
Abstract: No abstract text available
Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75343G3,
HUF75343P3,
HUF75343S3S
48e-1
23e-1
96e-2
HUF75343
15e-3
50e-2
40e-2
75343P
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Untitled
Abstract: No abstract text available
Text: 4 DRA WI N G THIS MADE IN THIRD DRAWI NG ANGL E IS UNPUBLISHED COPYRIGHT 19 2 3 PROJECTION RELEASED BY ANP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC 19 RIGHTS AF RESERVED. DI 5T REV I 5 I ONS 50 ZONE LTR DESCRIPTION REL DATE PER 0 G 1 A - 0 0 7 8 - 9 9
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OCR Scan
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0G1A-0078-99
25MAR99
9FEB99
9FEB99
25-MAR-gg
3469/edniniod
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PDF
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75343p
Abstract: 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P
Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75343G3,
HUF75343P3,
HUF75343S3S
85e-2
76e-3
35e-3
64e-2
48e-1
23e-1
96e-2
75343p
75343
75343G
02-E4
TA75343
91E2
27e5
HUF75343P
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- REVISIO N S RESERVED. 50 - LTR D E S C R IP T IO N REVISED PER TAB .5 2 2 TOTAL MAX W ID TH E C R - 12 - 0 0 5 3 0 3 D IM ENSIONS 2
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OCR Scan
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24JUL12
9FEB99
9FEB99
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PDF
|
Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - 2 .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N REVISED .5 2 2 TOTAL MAX W ID TH A . 4 8 y 5\ 1 TAB 2 WIRE 3 INSULATION £
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OCR Scan
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24JUL12
9FEB99
9FEB99
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PDF
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