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    Panasonic Electronic Components ERJ-3EKF1960V

    RES SMD 196 OHM 1% 1/10W 0603
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    DigiKey ERJ-3EKF1960V Reel 60,000 5,000
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    Mouser Electronics ERJ-3EKF1960V 42,361
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    Newark ERJ-3EKF1960V Cut Tape 34,647 1
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    Bristol Electronics ERJ-3EKF1960V 10,500
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    ERJ-3EKF1960V 10,000 148
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    TTI ERJ-3EKF1960V Reel 50,000
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    Master Electronics ERJ-3EKF1960V 79,899
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    Panasonic Electronic Components ERJ-6ENF1960V

    RES SMD 196 OHM 1% 1/8W 0805
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    DigiKey ERJ-6ENF1960V Digi-Reel 35,230 1
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    ERJ-6ENF1960V Cut Tape 35,230 1
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    ERJ-6ENF1960V Reel 35,000 5,000
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    Mouser Electronics ERJ-6ENF1960V 49,913
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    Newark ERJ-6ENF1960V Cut Tape 24,141 1
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    ERJ-6ENF1960V Reel 50,000
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    Bristol Electronics ERJ-6ENF1960V 8,896
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    TTI ERJ-6ENF1960V Reel 50,000
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    Master Electronics ERJ-6ENF1960V 40,000
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    Panasonic Electronic Components ERJ-8ENF1960V

    RES SMD 196 OHM 1% 1/4W 1206
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    DigiKey ERJ-8ENF1960V Cut Tape 29,084 1
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    ERJ-8ENF1960V Digi-Reel 29,084 1
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    ERJ-8ENF1960V Reel 25,000 5,000
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    Mouser Electronics ERJ-8ENF1960V 48,723
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    Bristol Electronics ERJ-8ENF1960V 4,810
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    Chip1Stop ERJ-8ENF1960V Cut Tape 3,700
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    Panasonic Electronic Components ERA-6AEB1960V

    RES SMD 196 OHM 0.1% 1/8W 0805
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    DigiKey ERA-6AEB1960V Digi-Reel 18,674 1
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    ERA-6AEB1960V Cut Tape 18,674 1
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    ERA-6AEB1960V Reel 10,000 5,000
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    Mouser Electronics ERA-6AEB1960V 9,324
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    TTI ERA-6AEB1960V Reel 5,000
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    Ozdisan Elektronik ERA-6AEB1960V
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    Panasonic Electronic Components ERA-3AEB1960V

    RES SMD 196 OHM 0.1% 1/10W 0603
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    DigiKey ERA-3AEB1960V Digi-Reel 8,878 1
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    • 100 $0.0708
    • 1000 $0.04865
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    ERA-3AEB1960V Cut Tape 8,878 1
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    • 1000 $0.04865
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    ERA-3AEB1960V Reel 5,000 5,000
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    Mouser Electronics ERA-3AEB1960V 14,895
    • 1 $0.13
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    • 10000 $0.034
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    TTI ERA-3AEB1960V Reel 20,000 5,000
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    Ozdisan Elektronik ERA-3AEB1960V
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    • 10 $0.18745
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    • 10000 $0.163
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    960V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Switching Power Supply Type SPD 960W 3 phases DIN rail mounting • • • • • • • • • Universal AC 3 phases input full range Can also be used as single phase 960VAC Installation on DIN rail 7.5 or 15mm PFC as standard High efficiency up to 93%


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    PDF 960VAC XX9603 400/500VAC3) 10-24AWG 6-20AWG 5-10mm2) 008Nm 763Nm Pin12

    7105

    Abstract: IRG4PH50K
    Text: PD- 91576A IRG4PH50K AC www.irf.com 1 10/26/09 IRG4PH50K 2 www.irf.com IRG4PH50K www.irf.com 3 IRG4PH50K 4 www.irf.com IRG4PH50K www.irf.com 5 IRG4PH50K D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X IC @25°C 50V 6000µF 100V Fig. 13a. Clamped Inductive Load Test Circuit


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    PDF 1576A IRG4PH50K O-247AC 7105 IRG4PH50K

    Untitled

    Abstract: No abstract text available
    Text: PD- 96063A IRG4PH50KPbF • Lead-Free AC www.irf.com 1 10/26/09 IRG4PH50KPbF 2 www.irf.com IRG4PH50KPbF www.irf.com 3 IRG4PH50KPbF 4 www.irf.com IRG4PH50KPbF www.irf.com 5 IRG4PH50KPbF D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X IC @25°C 50V 6000µF 100V Fig. 13a. Clamped Inductive Load Test Circuit


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    PDF 6063A IRG4PH50KPbF O-247AC

    Untitled

    Abstract: No abstract text available
    Text: APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features  Power MOS 7 MOSFETs - Low RDSon


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    PDF APTM120A20DG APTM120A20DG

    Untitled

    Abstract: No abstract text available
    Text: APTM120U10SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    PDF APTM120U10SAG APTM120U10SAG

    igbt induction cooker

    Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B

    APTGF25H120T1G

    Abstract: APT0502 APT0406
    Text: APTGF25H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 Q2 1 Q4 CR2 CR4 9 7 8 11 10 NTC 12 VCES = 1200V IC = 25A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    PDF APTGF25H120T1G APTGF25H120T1G APT0502 APT0406

    APT0406

    Abstract: APT0502
    Text: APTGF15H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC 12 VCES = 1200V IC = 15A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    PDF APTGF15H120T1G APT0406 APT0502

    UPS SIEMENS

    Abstract: 35n140a
    Text: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat 1400 V 70 A 4V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 V VGES Continuous ±20 V VGEM Transient


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    PDF 35N140A 728B1 123B1 728B1 065B1 UPS SIEMENS 35n140a

    IXGQ28N120B

    Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1

    APT12031JLL

    Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
    Text: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel


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    PDF APT12031JLL OT-227 APT12031JLL mosfet 600V 30A MOSFET 1200v 30a APT30DF120

    APT10035LLL

    Abstract: APT100GT120JRDL
    Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


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    PDF APT100GT120JRDL E145592 APT10035LLL

    APT17F80B

    Abstract: APT17F80S MIC4452
    Text: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced


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    PDF APT17F80B APT17F80S 250ns APT17F80B APT17F80S MIC4452

    IGBT microsemi

    Abstract: APT0406 APT0502
    Text: APTGF50A120T1G Phase leg NPT IGBT Power Module 5 6 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 CR1 7 8 3 4 Q2 Features • Non Punch Through NPT Fast IGBT - Low voltage drop


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    PDF APTGF50A120T1G IGBT microsemi APT0406 APT0502

    APTM120UM70DAG

    Abstract: APT0502 APT0601 rg08
    Text: APTM120UM70DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70mΩ typ @ Tj = 25°C ID = 171A @ Tc = 25°C Application • Zero Current Switching resonant mode SK D DK DK S Benefits • Outstanding performance at high frequency operation


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    PDF APTM120UM70DAG APTM120UM70DAG APT0502 APT0601 rg08

    APT7M120B

    Abstract: APT7M120S MIC4452
    Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


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    PDF APT7M120B APT7M120S APT7M120B APT7M120S MIC4452

    APT0406

    Abstract: APT0502 APTGF25H120T3G ice power 1000a
    Text: APTGF25H120T3G Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 10 CR4 Features • Non Punch Through NPT Fast IGBT


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    PDF APTGF25H120T3G APT0406 APT0502 APTGF25H120T3G ice power 1000a

    APT1201R2BFLL

    Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
    Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


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    PDF APT1201R2BFLL APT1201R2SFLL O-247 O-247 APT1201R2BFLLG 1400G

    APT0406

    Abstract: APT0502
    Text: APTGF25X120T3G 3 Phase bridge NPT IGBT Power Module 15 VCES = 1200V IC = 25A @ Tc = 80°C Application • Motor control 31 16 23 19 29 14 25 20 30 18 11 10 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC


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    PDF APTGF25X120T3G APT0406 APT0502

    APT12031JFLL

    Abstract: APT12031JLL
    Text: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT12031JFLL OT-227 APT12031JFLL APT12031JLL

    20n120

    Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes

    INFORMATION OF IC 7424

    Abstract: APT75GP120B2
    Text: APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT75GP120B2 INFORMATION OF IC 7424 APT75GP120B2

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


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    PDF APT50GT120B2R APT50GT120LR 50KHz

    APT4M120K

    Abstract: MIC4452
    Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


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    PDF APT4M120K O-220 APT4M120K MIC4452