LGH1025
Abstract: a103 transistor 3E10 3E12
Text: Specification for Approval Version 1.0 Part No. : LGH1025 LGH1026 LGH1028 LGH1029 comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea
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LGH1025
LGH1026
LGH1028
LGH1029
LGH1025
a103 transistor
3E10
3E12
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3708
Abstract: LFH1040 LWH1025 LWH1026 3050B LBH1026 LBH1025
Text: SGS Testing Korea Co., Ltd. #18-34, Sanbon-dong, Gunpo-city, Kyunggi-do, Korea 435-040 Tel : 031 428-5765~6, Fax: 031) 427-2374, InterNet>http://www.sgslab.co.kr Test Report No. F690101/LF-CTS031865 Date : November 18, 2004 Page 1 of 2 ` LUXPIA 948-1, Dunsan-Li, Bongdong-eup, Wanju-gun,
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F690101/LF-CTS031865
G-49/2004-3708/3
View/LBH1025,
LBH1026,
LWH1025,
LWH1026,
LGH1025,
LGH1026,
LWH1027,
LFH1040
3708
LFH1040
LWH1025
LWH1026
3050B
LBH1026
LBH1025
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Untitled
Abstract: No abstract text available
Text: 20/|~ 2312 87>/9 4+;-2361 9/4+? 0C@OPMCN U KYl[`af_ j]dYq U 866B koal[`af_ [YhYZadalq U B[[gj\af_ lg BMRJ D 7847 /DYjjqaf_Y 76cBZ Rmal[`af_@ =cB h]Yc2 78cB QLR k`gjl [aj[mal [mjj]flX U Roal[`af_ hgo]j mh lg ;4:cUB U :cU \a]d][lja[ klj]f_l` /Z]lo]]f [gad Yf\ [gflY[lk0
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76cBZ
UBD58
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GMKD
Abstract: 948 LG kgmd 78VA UBD58
Text: 20/|~ 2312 87>/9 4+;-2361 9/4+? 0C@OPMCN U KYl[`af_ j]dYq U 866B koal[`af_ [YhYZadalq U B[[gj\af_ lg BMRJ D 7847 /DYjjqaf_Y 76cBZ Rmal[`af_@ =cB h]Yc2 78cB QLR k`gjl [aj[mal [mjj]flX U Roal[`af_ hgo]j mh lg ;4:cUB U :cU \a]d][lja[ klj]f_l` /Z]lo]]f [gad Yf\ [gflY[lk0
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76cBZ
UBD58
GMKD
948 LG
kgmd
78VA
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview RG RD OD VO LG H2 H1 OG GND PW 1 2 3 4 5 20 19 18 17 16 6 7 8 9 10 15 14 13 12 11 Part Number CCD size MW39540AE 11 mm (type-2/3) V7 V8 V1 V2
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MW39540AE
MW39540AE
520k-pixel
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YC 746
Abstract: LM 746 kyp4 GFK 77 GFK 32 leh4 KYC u4
Text: .,9{x- }873137/9+ 5+0}; ,@=KLI@J T 9;A koal[`af_ [YhYZadalq T AeZa]fl l]eh4@ jYf_] mh lg 78; T 7 Fgje A / 7 Fgje C [gflY[l YjjYf_]e]fl T NdYkla[ k]Yd]\ Yf\ \mkl hjgl][l]\ lqh]k YnYadYZd] 7OHC>=D }HHDC>=KCGFJ T PgHQ / EJT [gehdaYfl H]Yl]jk 0k]Yl2 ^jgfl5j]Yj oaf\gok12 FYf eglgjk [gfljgd2
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oaf\gok12
96A0LM1
86A0LC1
YC 746
LM 746
kyp4
GFK 77
GFK 32
leh4
KYC u4
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MW39540AE
Abstract: transistor horizontal section tv
Text: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview The MW39540AE is a type-2/3 520k-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000
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MW39540AE
MW39540AE
520k-pixel
transistor horizontal section tv
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ccd sensor 22 pin diagram
Abstract: ccd diode 122t MN5280 CF25L 948 LG DIODE V6 OD CCD 16 pin ceramic chip 5318T ccd sensor 16 pin diagram
Text: CCD Area Image Sensor MW37381AE 11mm type-2/3 Wide CCD Area Image Sensor • Overview The MW37381AE is a 11mm (type-2/3) interline transfer CCD (IT-CCD) solid state image sensor devices. This device uses photodiodes in the optoelectric conversion section and CCDs for signal read out. The electronic
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MW37381AE
MW37381AE
350vertical
WDIP020-C-0600D
ccd sensor 22 pin diagram
ccd diode
122t
MN5280
CF25L
948 LG DIODE
V6 OD
CCD 16 pin ceramic chip
5318T
ccd sensor 16 pin diagram
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PDF
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MW39540AE
Abstract: WDIP020-G-0600D transistor horizontal section tv
Text: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview The MW39540AE is a type-2/3 520k-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000
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MW39540AE
MW39540AE
520k-pixel
WDIP020-G-0600D
transistor horizontal section tv
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PDF
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MW39540AE
Abstract: No abstract text available
Text: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview M Di ain sc te on na tin nc ue e/ d The MW39540AE is a type-2/3 520k-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000
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MW39540AE
MW39540AE
520k-pixel
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BD943
Abstract: No abstract text available
Text: BD943 BD945 BD947 _J \ _ SILICO N EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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OCR Scan
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BD943
BD945
BD947
BD944;
003l453tl
BD943
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b0945
Abstract: bd947 BD944 BD945 BD943
Text: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA
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BD944;
BD943
lc-500mA
O-220.
BD947.
7Z82147
7Z82146
003MS40
BD945
b0945
bd947
BD944
BD945
BD943
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948 LG DIODE
Abstract: No abstract text available
Text: 2SD1472 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 2 O 1 o1. 2. 3. 4. 948 Base Collector Emitter Collector Flange C — W v- 2kn (Typ) -VvV 0.5 kn (Typ) 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item
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2SD1472
948 LG DIODE
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2SC1815
Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Text: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *
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2SC944
2SC945
2SC947
2SC948
2SC1815
2SC387A
2SC1959
2SC1626
2sc372
2sc1741
2sc2061
2sc2381
2sc1907
2SC2284
2sc1726
2SC2495
2sc458
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BD944
Abstract: BD946 BD943 BD948 LE17
Text: S e m e la b p ic SEME Coventry Road. Lutterworth Leicestershire LE17 4JB. England Sales telephone: 0455 556565 AQAP-1 Licence No 2M8S02 ^ Licence No. M/103'CECC/UK ESA Admin telephone: 0455 552505 Telex: 341927 SMLLUT G Fax: 0455 552612 Approval Pen<5ing
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2M8S02
BD943;
BD944
BD946
BD948
-VC80
BD944
BD946
BD943
BD948
LE17
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PDF
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Untitled
Abstract: No abstract text available
Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.
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OCR Scan
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BD944
BD946
BD948
BD943;
CBD944
0Q34552
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PDF
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b0948
Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
Text: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A
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OCR Scan
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BD944
BD946
BD948
BD943;
BD944
BD948.
7Z82139
b0948
B0943
BD943
b0944
b0946
BD946
BD948
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PDF
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Untitled
Abstract: No abstract text available
Text: Apr. 1998 T1M 3742-45SL-341 1. RF PERFORMANCE SPECIFICATIONS Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB PldB Compression Point VDS= 10V GldS f=3.3-3.6QHz Power Gain at 1dB Compression Point los Drain Current Power Added Efficiency Tiadd
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3742-45SL-341
Gate-S98
VDS-10V.
IDS-3B00Â
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lg 7607
Abstract: NF 948 3SK1651 ik 7817 3SK165 dual-gate 1448S NF 935 NF 936
Text: 3SK165 SONY. GaAs N-Channel Dual-Gate MES FET Description Package O utline u n it: mm The 3S K 165 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern design. Easier high frequency
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3SK165
3SK165
2000MHz
lg 7607
NF 948
3SK1651
ik 7817
dual-gate
1448S
NF 935
NF 936
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PDF
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PHL 947
Abstract: 74F3040
Text: P h ilip s S e m ic o n d u c to r s - S lg n e ttc s Document No. 853-0023 ECN No. 98639 Date of issue January 29, 1990 Status Product FAST 74F3040 30Q Une Driver Dual 4-Input NAND 30Q Line Driver FAST Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT
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74F3040
74F3040
160mA
16-Pin
N74F3040N
N74F3040D
500ns
PHL 947
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PDF
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Untitled
Abstract: No abstract text available
Text: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —
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OCR Scan
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TIM3742-45SL-34I
3600mfl,
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PDF
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948 LG DIODE
Abstract: No abstract text available
Text: 2SK2423 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • High speed sw itching • Low drive current • N o Secondary B reakdow n • Suitable for S w itching regulator, D C-D C converter. Outline
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2SK2423
O-220CFM
948 LG DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: HAT1033T Silicon P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-532E 6th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline T S S O P -8 1 5 8 D D D ? S S S S
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HAT1033T
ADE-208-532E
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PDF
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transistor f 948
Abstract: MPS6567 transistor a 949 u407
Text: MPS6567 SILICON NPN SILICON AMPLIFIER/MIXER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for use in high-frequency am plifier and m ixer ap plications. • High Collector-Em itter Breakdown Voltage — B V c E O = 40 V dc (Min) @ 1q = 1.0 mAdc
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MPS6567
llE-10Â
10mAdc,
300lis,
transistor f 948
MPS6567
transistor a 949
u407
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