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    lg 7607

    Abstract: NF 948 3SK1651 ik 7817 3SK165 dual-gate 1448S NF 935 NF 936
    Text: 3SK165 SONY. GaAs N-Channel Dual-Gate MES FET Description Package O utline u n it: mm The 3S K 165 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern design. Easier high frequency


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    3SK165 3SK165 2000MHz lg 7607 NF 948 3SK1651 ik 7817 dual-gate 1448S NF 935 NF 936 PDF

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    Abstract: No abstract text available
    Text: 3SK165 SONY GaAs N-Channel Dual-Gate MES FET Description The 3SK165 is a GaAs N -Channel D ual-G ate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optiĀ­ mum mask pattern design. Easier high frequency circuit


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    3SK165 3SK165 800MHz 2000MHz 0G20b32 M-254 2Qb33 PDF