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    GS8644Z36GE-250

    Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72C
    Text: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		PDF GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 133MHz 8644Zxx GS8644Z36GE-250 GS8644Z18B GS8644Z36B GS8644Z72C

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18E/GS8644Z36E 165-Pin 133MHz 8644Zxx

    mcm 250

    Abstract: No abstract text available
    Text: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx 8644Zxx mcm 250

    GS8644Z

    Abstract: No abstract text available
    Text: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18/36E-xxxV 165-Bump 8644ZVxx GS8644Z

    Untitled

    Abstract: No abstract text available
    Text: Product Preview GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original     		PDF GS8644Z18 /GS8644Z36 /GS8644Z72 8644Zxx

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		PDF GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 8644Zxx

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18/36E-xxxV 165-Bump 8644ZVxx

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18E/GS8644Z36E 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18E/GS8644Z36E 209-Pin 165-BGA 16pdated 8644Zxx

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		PDF GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 8644Zxx

    Untitled

    Abstract: No abstract text available
    Text: Product Preview GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original     		PDF GS8644Z18 /GS8644Z36 /GS8644Z72 8644Zxx

    GS8644Z36E-225I

    Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72 GS8644Z72C GS8644Z36
    Text: Product Preview GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original     		PDF GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 8644Zxx GS8644Z36E-225I GS8644Z18B GS8644Z36B GS8644Z72 GS8644Z72C GS8644Z36

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx 8644Zxx

    26020

    Abstract: ir 21015 GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36E-150 GS8644Z36E-166
    Text: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx 8644Zxx 26020 ir 21015 GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36E-150 GS8644Z36E-166

    GS8644Z18E-250I

    Abstract: 8644ZXX gs8644z36ge GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36
    Text: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		PDF GS8644Z18E/GS8644Z36E 165-Pin 133MHz 8644Zxx GS8644Z18E-250I gs8644z36ge GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36