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    Fuji Electric Co Ltd MB81117822E100FN

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    81117822

    Abstract: 81117822e
    Text: MEMORY 2 x 1 M x 8 BITS JS B ilM •I 25/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS x 8 BITS Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu M 81117822E is a CMOS Synchronous Dynamic Random Ace&ss Memory (SDRAM containing 16,777,216 memory cells accessible in an 8-bit format. The MiJ8l 1178221= features a fully synchronous


    OCR Scan     		576-WORDS B81117822E MB81117822E F9705 81117822 81117822e PDF

    81117822e

    Abstract: 81117822
    Text: cP IITSU June 1997 Revision 1.0 data sh e e t SDC4UV6482D- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The S D C 4U V 6482D -(67/84/100/125)T-S is a high performance, 32-m egabtye synchronous, dynamic RAM module organized as


    OCR Scan     		SDC4UV6482D- 32MByte 6482D 168-pin, 81117822E- 32MByte 81117822e 81117822 PDF