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    Rubycon Corporation 80USC6800MEFCSN30X45

    CAP ALUM 6800UF 20% 80V SNAP TH
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    DigiKey 80USC6800MEFCSN30X45 Bulk 730 1
    • 1 $7.15
    • 10 $5.023
    • 100 $3.8595
    • 1000 $3.22779
    • 10000 $3.06613
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    Rubycon Corporation 80USC2200MEFCSN22X35

    CAP ALUM 2200UF 20% 80V SNAP TH
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    DigiKey 80USC2200MEFCSN22X35 Bulk 581 1
    • 1 $3.79
    • 10 $2.565
    • 100 $3.79
    • 1000 $1.53346
    • 10000 $1.38357
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    Microchip Technology Inc 1N4480USE3-TR

    VOLTAGE REGULATOR
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    DigiKey 1N4480USE3-TR Digi-Reel 100 1
    • 1 $10.74
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    1N4480USE3-TR Reel 100 100
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    • 100 $9.97
    • 1000 $9.97
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    1N4480USE3-TR Cut Tape 100 1
    • 1 $10.74
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    Microchip Technology Inc 1N4480US-TR

    VOLTAGE REGULATOR
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    DigiKey 1N4480US-TR Digi-Reel 94 1
    • 1 $10.84
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    1N4480US-TR Cut Tape 94 1
    • 1 $10.84
    • 10 $10.84
    • 100 $10.84
    • 1000 $10.84
    • 10000 $10.84
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    Rubycon Corporation 80USG4700MEFCSN30X40

    CAP ALUM 4700UF 20% 80V SNAP TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 80USG4700MEFCSN30X40 Bulk 80 1
    • 1 $6.07
    • 10 $4.225
    • 100 $3.2154
    • 1000 $2.66661
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    80US Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    80USC10000MEFC35X50 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 10000UF 20% 80V SNAP Original PDF
    80USC10000MEFCSN35X50 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 10000UF 80V 20% SNAP Original PDF
    80USC1000MEFC20X25 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1000UF 20% 80V SNAP Original PDF
    80USC1200MEFC22X25 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 80V SNAP Original PDF
    80USC1200MEFCSN22X25 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1200UF 80V 20% SNAP Original PDF
    80USC1500MEFCSN20X30 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1500UF 80V 20% SNAP Original PDF
    80USC1800MEFC22X30 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1800UF 20% 80V SNAP Original PDF
    80USC1800MEFCSN22X30 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 1800UF 80V 20% SNAP Original PDF
    80USC2200MEFC22X35 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2200UF 20% 80V SNAP Original PDF
    80USC2200MEFC25X30 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2200UF 20% 80V SNAP Original PDF
    80USC2200MEFCSN22X35 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2200UF 20% 80V SNAP Original PDF
    80USC2200MEFCSN22X40 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2200UF 20% 80V SNAP Original PDF
    80USC2200MEFCSN25X30 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 2200UF 80V 20% SNAP Original PDF
    80USC2700MEFC22X40 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2700UF 20% 80V SNAP Original PDF
    80USC3300MEFC22X45 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 3300UF 20% 80V SNAP Original PDF
    80USC3300MEFC25X35 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 3300UF 20% 80V SNAP Original PDF
    80USC3300MEFCSN22X45 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 3300UF 20% 80V SNAP Original PDF
    80USC3300MEFCSN22X50 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 3300UF 20% 80V SNAP Original PDF
    80USC3300MEFCSN25X35 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 3300UF 80V 20% SNAP Original PDF
    80USC4700MEFC25X45 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 4700UF 20% 80V SNAP Original PDF

    80US Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SF1154

    Abstract: DC550 alcoa electrical joint compound LS2037 dow corning 732 dissipator presspak C770 C770A Alcoa
    Text: INVERTER THYRISTOR C770 & C770A SPCO 77mm / 1800V / 60-80us Disc-type ceramic PRESSPAK package Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate


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    PDF C770A 60-80us C770A_ LS2037 SF1154 DC550 G322L alcoa electrical joint compound dow corning 732 dissipator presspak C770 C770A Alcoa

    SF1154

    Abstract: dow corning 732 dissipator C770 C770A Alcoa #2 Electrical Joint Compound alcoa electrical joint compound 60-80U
    Text: INVERTER THYRISTO R C770 & C770A 77mm / 1800V / 60-80us Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.It is supplied in an industry accepted disc-type package , ready to mount using


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    PDF C770A 60-80us C770A_ LS2037 SF1154 DC550 G322L dow corning 732 dissipator C770 C770A Alcoa #2 Electrical Joint Compound alcoa electrical joint compound 60-80U

    Untitled

    Abstract: No abstract text available
    Text: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


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    PDF FDMA8878 FDMA8878

    IRGPS4067

    Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
    Text: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 


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    PDF IRGPS4067DPbF IRFPS37N50A IRGPS4067 irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet 4-wire Resistive Touch Screen Controller BU21029MUV ●General Description Unlike most resistive touch screen controllers, the BU21029MUV 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single


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    PDF BU21029MUV BU21029MUV 12-bit

    marking P32 transistor

    Abstract: D24N
    Text: ULE Series www.murata-ps.com s Isolated, High Density, Eighth-Brick 1.25–20 Amp, DC/DC Converters Typical unit The ULE Series "Eighth-Brick" DC/DC Converters are high-current isolated power converters designed for use in high-density system boards. FEATURES


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BU BUF08832 F08 832 SBOS476C – AUGUST 2009 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory Check for Samples: BUF08832 FEATURES DESCRIPTION • • • • • • The BUF08832 offers eight programmable gamma


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    PDF BUF08832 SBOS476C 10-BIT 300mV 300mA 400kHz BUF08832

    Untitled

    Abstract: No abstract text available
    Text: BUF16821 BU F16 821 SBOS428C – JULY 2008 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory Check for Samples: BUF16821 FEATURES DESCRIPTION • • • • • The BUF16821 offers 16 programmable gamma


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    PDF BUF16821 SBOS428C 10-BIT 16-CHANNEL 300mV 300mA 400kHz BUF16821

    m201un02

    Abstract: m201un02 lcd panel pin out D4800 AUO lcd module FI-X30S-H FI-XB30SL-HF10 AUO lcd driver "failure rate" lcd g1 connector auo optronics lcd tft
    Text: Spec. No.: DDPM-UN02-2 Version: 0.1 Total pages: 24 Date: 2003-Aug-15 AU OPTRONICS CORPORATION Product Specifications 20.1” UXGA Color TFT-LCD Module Model Name: M201UN02 V.2 Approved by Prepared by DDBU Marketing Division / AU Optronics Croporation Customer


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    PDF DDPM-UN02-2 2003-Aug-15 M201UN02 M201UN02-2 950-M89 IEC950) m201un02 m201un02 lcd panel pin out D4800 AUO lcd module FI-X30S-H FI-XB30SL-HF10 AUO lcd driver "failure rate" lcd g1 connector auo optronics lcd tft

    Diode Gfg 75a

    Abstract: P2HM755HA PDM755HA p2hm755h
    Text: PDM755HA P2HM755HA MOSFET 75A 500V P2HM755HA P2HM755HA PDM755HA 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧


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    PDF PDM755HA P2HM755HA PDM755HA Diode Gfg 75a P2HM755HA p2hm755h

    TH05-3H103F

    Abstract: No abstract text available
    Text: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of


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    PDF R2A20055NS R03DS0074EJ0100 R2A20055NS 100mA/500mA) TH05-3H103F

    ST7093A

    Abstract: sitronix 2x16 lcd character ST7093 COM16 SEG80 2x16 alphanumeric lcd db3 531 LCD ALPHANUMERIC sitronix c code
    Text: ST Sitronix ST7093 26 COM / 80 SEG LCD CONTROLLER/DRIVER FEATURES z CGROM :10240 bits 256chars 5 x 8 dots z z z z z z z CGRAM :320 bits(8 chars 5 x 8 dots) DDRAM :64 bytes(16 x 4 ) ICONRAM :80 bits Low power operation support: - 2.4 to 3.6V Wide range of LCD driver power


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    PDF ST7093 256chars ST7093A sitronix 2x16 lcd character ST7093 COM16 SEG80 2x16 alphanumeric lcd db3 531 LCD ALPHANUMERIC sitronix c code

    TAG 8510

    Abstract: 5.1 audio amplifier STV-5700 STV0684 IS1612 VC5700 134E6 48LCC VC5700V048 VC6700V048
    Text: VC700 2.0 MegaPixel Digital Video CMOS Image Sensor PRODUCT PREVIEW Features Applications • 1600 x 1200 resolution 2 megapixel ● Digital Still Cameras ■ 1/2 inch format lens compatible ● Barcode Reading ■ 3v3 supply Technical specifications ■ i2c control


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    PDF VC700 864mm 20fps) 20fps 48MHz TAG 8510 5.1 audio amplifier STV-5700 STV0684 IS1612 VC5700 134E6 48LCC VC5700V048 VC6700V048

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and


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    PDF UF830Z O-220F UF830ZL-TF3-T UF830ZG-TF3-T O-220F QW-R502-612

    Untitled

    Abstract: No abstract text available
    Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


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    PDF 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB

    R14 P1F

    Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
    Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A


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    PDF 32-Bit TLCS-900/H1 TMP92CF26AXBG TMP92CF26A TMP92CF26AXBG TMP92CF26A 228-pin R14 P1F N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12

    IRG7PH42UD1M

    Abstract: 30A, 600v RECTIFIER DIODE
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


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    PDF IRG7PH42UD1M 1300Vpk D-020D IRG7PH42UD1M 30A, 600v RECTIFIER DIODE

    CMP0817BA0

    Abstract: CMP0817BA
    Text: CMP0817BA0-I CMOS LPRAM Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft May. 2nd, 2004 Final 0.1 Added G Pb-Free and H(Pb-Free & Halogen Free) descriptions


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    PDF CMP0817BA0-I 48-FBGA- 25/Typ. 85/Typ. CMP0817BA0 CMP0817BA

    Untitled

    Abstract: No abstract text available
    Text: CMP0817BAx-E CMOS LPRAM Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004


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    PDF CMP0817BAx-E 25/Typ. 85/Typ.

    Untitled

    Abstract: No abstract text available
    Text: HI-6130 / HI-6131 / HI-6132 MIL-STD-1553 / MIL-STD-1760 3.3V BC / MT / RT Multi-Terminal Device GENERAL DESCPIPTION • The 3.3V CMOS HI-613x device provides a complete single- or multi-function interface between a host processor and MIL-STD-1553B bus. Each IC contains


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    PDF HI-6130 HI-6131 HI-6132 MIL-STD-1553 MIL-STD-1760 HI-613x MIL-STD-1553B HI-6132: 121BGA

    Untitled

    Abstract: No abstract text available
    Text: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications


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    PDF FDB075N15A O-263

    Untitled

    Abstract: No abstract text available
    Text: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)


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    PDF IRGP30B120KD-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: RADIALL TECHNICAL Département COAXIAL j> réservons I* droh d'apportar tout* modification Jugé« uti 10t. Hua Phtttbart « M m Z ont M h M i Ouest 9311« - H08NV-80US-BCHS Téléphone : 854^8040 NOTICE TECHNIQUE DATA TITLE TITRE R ROUND HERMETICALLY STALED


    OCR Scan
    PDF B08NV-80US-BCHS

    5S70

    Abstract: No abstract text available
    Text: 2 SE D fc^QMS? 0 0 0 0 3 7 3 ON CHIP SYSTEMS t. T-TS-S CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. Los Gatos, CA USA 408) 395-3350 TLX 499-2868 C E M 5 5 7 0 BUS CONTROLLED SIGNAL PROCESSOR Preliminary, January 1987 Description ' The CEM 5570 is an audio signal processing block controllable


    OCR Scan
    PDF it-13-81 HC/38 12//Sâ 5S70