Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P2HM755H Search Results

    P2HM755H Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2HM755HA Nihon Inter Electronics MOSFET 75a 500a Original PDF

    P2HM755H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode Gfg 75a

    Abstract: P2HM755HA PDM755HA p2hm755h
    Text: PDM755HA P2HM755HA MOSFET 75A 500V P2HM755HA P2HM755HA PDM755HA 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧


    Original
    PDF PDM755HA P2HM755HA PDM755HA Diode Gfg 75a P2HM755HA p2hm755h

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 75A 500V 1 PDM755HA P2HM755HA


    Original
    PDF PDM755HA P2HM755HA

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original
    PDF /500V P2HM755HA 300KHz

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original
    PDF /500V P2HM755HA 300KHz 150iMAX 25i/W

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original
    PDF /500V P2HM755HA 300KHz 150MAX

    Untitled

    Abstract: No abstract text available
    Text: MOSFET PDM755HA P2HM755HA 75A 500 V •回路図 CIRCUIT PD P2H Rg MOS SBD 1 D2S1 Rg G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD MOS SBD D2 S1 G1 G2 S2 FRD S2 FRD D1 SBD MOS Rg S1 S1 G1 Rg ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) PDM755HA


    Original
    PDF PDM755HA P2HM755HA Weight220g Duty50 PDM755HA/P2HM755HA 75TC25 53TC25

    Gfg 75a

    Abstract: Diode Gfg 75a IR5060
    Text: PDM755HA P2HM755HA MOSFET 75A 500V P2HM755HA PDM755HA 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧


    Original
    PDF PDM755HA P2HM755HA P2HM755HA CharacteristicsTC25 oth150MAX Gfg 75a Diode Gfg 75a IR5060

    PT76S16

    Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
    Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


    Original
    PDF

    508RP

    Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
    Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


    Original
    PDF

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


    Original
    PDF C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16

    FCGS20A12

    Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
    Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


    Original
    PDF