AQS610TS
Abstract: AQS610TSX AQS610TSZ
Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)
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AQS610TS)
16-pin
083inch
AQS610TS
AQS610TSX
AQS610TSZ
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)
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AQS610TS)
16-pin
083inch
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Untitled
Abstract: No abstract text available
Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.012 @ VGS = –4.5 V "8.8 0.017 @ VGS = –2.5 V "7.4 0.025 @ VGS = –1.8 V "6.0 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6465DQ G *Source Pins 2, 3, 6 and 7
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Si6465DQ
08-Apr-05
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Si6465DQ
Abstract: No abstract text available
Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.012 @ VGS = –4.5 V "8.8 0.017 @ VGS = –2.5 V "7.4 0.025 @ VGS = –1.8 V "6.0 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6465DQ G *Source Pins 2, 3, 6 and 7
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Si6465DQ
S-56943--Rev.
02-Nov-98
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2fu smd transistor
Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR
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TC55V1001ASTI/ASRI
TC55V2001STI/SRI
TC55V020FT/TR
TC55V2161FTI
TC55V200FT/TR
TC55V040FT/TR
TC55V400FT/TR
TC58VT
TC75S55FU
2fu smd transistor
Infrared sensor TSOP 1738
diode ESM 765
tsop Ir sensor
smd 1608
TSOP44 Package layout
TSOP infrared
infrared sensor (TSOP 1738)data sheet
Compact High-Current and Low VF Surface Mounting Device SBD
TC58V16BFT
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schematic diagram CORDLESS DRILL
Abstract: MOSFET Based Chopper cordless drill STEVAL-IHM012V1 DC chopper mosfet schematic dc motor driver
Text: STEVAL-IHM012V1 Cordless drill evaluation board information based on Power MOSFET and 8-pins MCU Data Brief Features • DC motor speed regulation system DC chopper . ■ Battery voltage check ■ High current protection ■ Torque limitation Description
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STEVAL-IHM012V1
STEVAL-IHM012V1
schematic diagram CORDLESS DRILL
MOSFET Based Chopper
cordless drill
DC chopper
mosfet schematic dc motor driver
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Untitled
Abstract: No abstract text available
Text: STEVAL-IHM012V1 Cordless drill evaluation board information based on Power MOSFET and 8-pins MCU Data Brief Features • DC motor speed regulation system DC chopper . ■ Battery voltage check ■ High current protection ■ Torque limitation Description
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STEVAL-IHM012V1
STEVAL-IHM012V1
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72511
Abstract: Si6433BDQ Si6433BDQ-T1
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D
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Si6433BDQ
Si6433BDQ-T1
Si6433BDQ-T1--E3
S-50156--Rev.
31-Jan-05
72511
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72511
Abstract: Si6433BDQ Si6433BDQ-T1
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D
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Si6433BDQ
Si6433BDQ-T1
Si6433BDQ-T1--E3
08-Apr-05
72511
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Si6433BDQ
Abstract: 72511
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7
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Si6433BDQ
Si6433BDQ-T1-GE3
18-Jul-08
72511
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Si6447DQ
Abstract: No abstract text available
Text: Si6447DQ Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G Si6447DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6447DQ
18-Jul-08
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Si6459DQ
Abstract: No abstract text available
Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6459DQ
18-Jul-08
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Si6466ADQ
Abstract: Si6466ADQ-T1
Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7
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Si6466ADQ
Si6466ADQ-T1
08-Apr-05
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Si6467BDQ-T1-E3
Abstract: Si6467BDQ
Text: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.0125 @ VGS = −4.5 V −8.0 0.0155 @ VGS = −2.5 V −7.0 0.020 @ VGS = −1.8 V −6.0 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6467BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7
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Si6467BDQ
Si6467BDQ-T1
Si6467BDQ-T1--E3
S-41258--Rev.
05-Jul-04
Si6467BDQ-T1-E3
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Si6467DQ
Abstract: No abstract text available
Text: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7
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Si6467DQ
S-59526--Rev.
Oct-98
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Si6463BDQ
Abstract: No abstract text available
Text: Si6463BDQ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -7.4 0.020 @ VGS = -2.5 V - 6.3 0.027 @ VGS = -1.8 V - 5.5 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6463BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7
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Si6463BDQ
08-Apr-05
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Si6459DQ
Abstract: No abstract text available
Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6459DQ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SÌ6465DQ VISHAY Siliconix T P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY V d s (V) -8 r DS(ON) (-2) I d (A) 0.012 @ VGS = —4.5 V ±8 .8 0.017 @ VGS = —2.5 V ±7 .4 0.025 @ VGS = -1 .8 V ±6 .0 SQ TSSOP-8 °n i - J ; *Source Pins 2, 3, 6 and 7
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6465DQ
S-59517--
04-Sep-98
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Untitled
Abstract: No abstract text available
Text: SI6465DQ VISHAY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.012 @ VGS = —4.5 V ±8 .8 0.017 @ VGS = —2.5 V ±7 .4 0.025 @ VGS = -1 .8 V ±6 .0 I* ' v* so TSSOP-8 D S D Si6465DQ 'Source Pins 2, 3, 6 and 7
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SI6465DQ
Si6465DQ
S-56943â
02-Nov-98
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TSSOP28P
Abstract: 32-DQ
Text: Temic SÌ6332DQ Semiconductors Triple P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 I d (A) ±4.5 ±3.4 rDS(on) (^ ) 0.040 @ VGs = -10 V 0.070 @ VGS = -4.5 V p o '« 6 TSSOP-28 ne "Source Pins 2, 3, 25, 26, and 27 must be tied common. Source Pins 7, 8, 20, 21, and
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6332DQ
TSSOP-28
S-47962--Rev.
22-Jul-96
TSSOP-8/-28
22-M-96
TSSOP28P
32-DQ
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Untitled
Abstract: No abstract text available
Text: SÌ6410DQ VI^ Y - Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.014 @ VGS = 10 V ±7 .8 0.021 @ VGS = 4.5 V ±6 .3 30 \ \ D Q TSSOP-8 * Source Pins 2, 3, 6 and 7
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6410DQ
S-56945--
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6426DQ Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) rDS(on) (Q) 0.035 @ VGs = 4.5 V 0.04 @ VGS = 2.5 V 20 I d (A) ±5.4 ±4.9 D Q TSSOP-8 Ò s* *Source Pins 2, 3. 6, and 7 must be tied common. TSSOP-8 Top View N-Channel MOSFET
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6426DQ
S-49534--Rev.
Q6-Oct-97
-Oct-97
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6466DQ S e m i c o n d u c t o r s N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) Id (A) r DS(on) (Q) 0 .0 1 4 VGS = 4.5 V ± 7 .8 0.021 @ VGS = 2.5 V ± 6 .3 20 TSSOP-8 *Source Pins 2, 3. 6 and 7 must be tied common. TSSOP-8 Top View
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6466DQ
S-54704--Rev.
13-Oct-97
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STK772B
Abstract: 3032B LA5601 LA5009M
Text: Continuée from previous page Package Device Type Number of Drawing pins and number configuration Description Feature* : • LA5005M MFP 8 3032B 5 V low-saturation voltage regulator Miniflat package version o1 the LA5005 LA5006M MFP 8 3032B 6 V low-saturation voltage regulator
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LA5005M
LA5006M
3032B
3032B
LA5005
STK733C
STK740B'
STK740C
STK743B
STK772B
STK772B
LA5601
LA5009M
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