BUK7511-55B
Abstract: BUK7611-55B BUK7E11-55B buk7611
Text: BUK75/76/7E11-55B TrenchMOS standard level FET Rev. 02 — 11 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/76/7E11-55B
OT404,
OT226
BUK7511-55B
BUK7611-55B
BUK7E11-55B
buk7611
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Untitled
Abstract: No abstract text available
Text: 7E115 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 7 Load Current Max. (A)1.1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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7E115
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Untitled
Abstract: No abstract text available
Text: 7E115-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 7 Load Current Max. (A)1.1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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7E115-230
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Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1
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fds8878
Abstract: No abstract text available
Text: FDS8878 N-Channel PowerTrench MOSFET tm 30V, 10.2A, 14mΩ Features General Description rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8878
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Untitled
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
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Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5
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FDS8878
Abstract: No abstract text available
Text: FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14mΩ Features General Description rDS ON = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8878
FDS8878
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ENCX24J600
Abstract: ENC624J600 7F35 7E21 1321TH 3F92 624J600 7f46 ENC424J600 7E74
Text: ENC424J600/624J600 数据手册 带 SPI 或并行接口的 独立 10/100 以太网控制器 2009 Microchip Technology Inc. 初稿 DS39935A_CN 请注意以下有关 Microchip 器件代码保护功能的要点： • Microchip 的产品均达到 Microchip 数据手册中所述的技术指标。
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ENC424J600/624J600
DS39935A
ENCX24J600
ENC624J600
7F35
7E21
1321TH
3F92
624J600
7f46
ENC424J600
7E74
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FDS8878
Abstract: No abstract text available
Text: FDS8878 N-Channel PowerTrench MOSFET tm 30V, 10.2A, 14mΩ Features General Description rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8878
FDS8878
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BV-1 501
Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1
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LTC1150
LTC1150
5e-12
5e-11
2857E-11
65e-11
7124E-04
3e-11
9605e-8
74902E-10
BV-1 501
BF-960 spice model
LT1715 spice model
Transistor TT 2246
cd 6283 ic
transistor KF 507
LT1716 spice model
COMP1016
lt6234 spice model
AUO-11307 R01
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N322AP
Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
Text: ISL9N322AP3/ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N322AP3/ISL9N322AS3ST
970pF
O-263AB
O-220AB
N322AP
ISL9N322AS3ST
N322A
ISL9N322AP3
7E10
N322
N322AS
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irlml2404
Abstract: transistor 9529 IRF7603 IRF7389 IRF7103 irlml2402 Small-Outline SMD Reliability Report 704618 HEXFET SO-8 irf7404 datasheet
Text: Small-Outline SMD Reliability Report Page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms Reliability Data
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ENCX24J600
Abstract: 624J600 ENC424J600 ENC424J600-I/PT ENC624j600 DS39935 7E74 AD12 AD14 PIC32
Text: ENC424J600/624J600 Data Sheet Stand-Alone 10/100 Ethernet Controller with SPI or Parallel Interface 2010 Microchip Technology Inc. DS39935C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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ENC424J600/624J600
DS39935C
DS39935C-page
ENCX24J600
624J600
ENC424J600
ENC424J600-I/PT
ENC624j600
DS39935
7E74
AD12
AD14
PIC32
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FDS8878
Abstract: FDS8978
Text: FDS8978 N-Channel PowerTrench MOSFET tm 30V, 7.5A, 18mΩ Features General Description rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8978
FDS8978
FDS8878
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FDS8878
Abstract: No abstract text available
Text: FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14mΩ Features General Description rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8878
FDS8878
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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FDS8870
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
FDS8870
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15j100 capacitor
Abstract: W28NT1000 W48NT600 15j100 RETMA RAILS p022h P012H R36W MARKING CODE WM9 12EB70
Text: ACOPIAN PROMISES TO SHIP WITHIN THREE DAYS Acopian P.O. Box 638 Easton, PA 18044-0638 . . . and we keep that promise. For more than 40 years, Acopian has been shipping AC to DC power modules within three days after receipt of an order. During this period, the Acopian line has expanded from
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Abstract: No abstract text available
Text: KEMET Part Number: T354B155M035AS Capacitor, tantalum, 1.5 uF, +/-20% Tol, 35V@85C, Lead Spacing=6.35 mm General Information Manufacturer: KEMET Electrical Specifications Value: 35V Voltage DC @ 125C: 23V Tolerance: Body Type: Temperature Range: Symbol Dimensions mm
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T354B155M035AS
7e1113a3-1e72-4bc8-bd3c-116507cfc2bd
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FDS8978
Abstract: FDS8878
Text: FDS8978 Dual N-Channel PowerTrench MOSFET 30V, 7.5A, 18mΩ Features General Description rDS ON = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8978
FDS8978
FDS8878
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Untitled
Abstract: No abstract text available
Text: FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14mΩ Features General Description ̈ rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8878
FDS8878
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Untitled
Abstract: No abstract text available
Text: FDS8876 N-Channel PowerTrench MOSFET tm 30V, 12.5A, 8.2mΩ Features General Description ̈ rDS on = 8.2mΩ, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8876
FDS8876
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CSD-424H
Abstract: No abstract text available
Text: Super-bright Red R / Orange (E)/ Red ID) Bright Red (H) Amber (A) Bright Yellow (T| Ap= 6 6 0 nm \p = 6 5 5 /6 9 5 nm \ p = 6 3 5 /6 1 0 nm \ p = 5 9 0 /5 8 5 nm CSS-41 4 R - 2 1 CSS-41 4E-1 1 10.2 C S S -4 1 4 H - 2 1 CSS-41 4 A - 1 1 (0.40) CSS-41 5R-21
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CSS-41
CSD-424DC-21
CSD-424HC-21
-414D
5R-21
5D-21
CSD-424H
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