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    7C109 Price and Stock

    Infineon Technologies AG CY7C109D-10ZXIT

    IC SRAM 1MBIT PARALLEL 32TSOP I
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    DigiKey CY7C109D-10ZXIT Digi-Reel 2,980 1
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    CY7C109D-10ZXIT Cut Tape 2,980 1
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    CY7C109D-10ZXIT Reel 1,500 1,500
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    Avnet Americas CY7C109D-10ZXIT Reel 8 Weeks 1,500
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    Mouser Electronics CY7C109D-10ZXIT 550
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    Infineon Technologies AG CY7C109D-10ZXI

    IC SRAM 1MBIT PARALLEL 32TSOP I
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    DigiKey CY7C109D-10ZXI Tray 2,759 1
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    Avnet Americas CY7C109D-10ZXI Tray 8 Weeks 780
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    Mouser Electronics CY7C109D-10ZXI 1,109
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    Rochester Electronics CY7C109D-10ZXI 917 1
    • 1 $2.14
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    Chip1Stop CY7C109D-10ZXI Tray 770
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    Infineon Technologies AG CY7C109D-10VXIT

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C109D-10VXIT Digi-Reel 1,813 1
    • 1 $4.44
    • 10 $3.942
    • 100 $3.4985
    • 1000 $3.33588
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    CY7C109D-10VXIT Cut Tape 1,813 1
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    • 10 $3.942
    • 100 $3.4985
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    CY7C109D-10VXIT Reel 1,500 750
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    Avnet Americas CY7C109D-10VXIT Reel 8 Weeks 750
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    Mouser Electronics CY7C109D-10VXIT 580
    • 1 $4.39
    • 10 $3.63
    • 100 $3.48
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    Chip1Stop CY7C109D-10VXIT Cut Tape 377
    • 1 $4.1
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    • 100 $3.35
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    KEMET Corporation C317C109D2G5TA

    CAP CER 1PF 200V C0G/NP0 RADIAL
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    DigiKey C317C109D2G5TA Bulk 450 1
    • 1 $0.6
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    • 100 $0.2336
    • 1000 $0.16765
    • 10000 $0.14087
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    Avnet Americas C317C109D2G5TA Bulk 11 Weeks 500
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    Mouser Electronics C317C109D2G5TA 456
    • 1 $0.52
    • 10 $0.354
    • 100 $0.233
    • 1000 $0.154
    • 10000 $0.125
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    Newark C317C109D2G5TA Bulk 1,500
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    Infineon Technologies AG CY7C109D-10VXI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C109D-10VXI Tube 251 1
    • 1 $4.44
    • 10 $4.44
    • 100 $3.56652
    • 1000 $3.21575
    • 10000 $3.10175
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    Avnet Americas CY7C109D-10VXI Tube 8 Weeks 1,150
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    Mouser Electronics CY7C109D-10VXI 1,729
    • 1 $4.27
    • 10 $3.51
    • 100 $3.41
    • 1000 $3.17
    • 10000 $3.05
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    Rochester Electronics CY7C109D-10VXI 1,058 1
    • 1 $2.86
    • 10 $2.86
    • 100 $2.69
    • 1000 $2.43
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    TME CY7C109D-10VXI 1
    • 1 $3.92
    • 10 $3.26
    • 100 $2.73
    • 1000 $2.66
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    Chip1Stop CY7C109D-10VXI Tube 1,103
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    7C109 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7C109 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    7C109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7C109A

    Abstract: CY7C109
    Text: Cypress Semiconductor Qualification Report QTP# 98064 VERSION 1.0 April, 1998 1 Meg SRAM, R42HD Technology, Fab 4 Qualification 7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 128K x 8 SRAM - R42DH Technology - Fab 4 Device: 7C109 (7C109H)


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    PDF R42HD CY7C109/CY7C1009 R42DH CY7C109 7C109H) 32-pin, 400-mil CY7C109-VC 7C109A CY7C109

    SOJ package MSL

    Abstract: 7C109A CY7C109 JESD22 R42HD R42HD FAB4
    Text: Cypress Semiconductor Qualification Report QTP# 98085 VERSION 1.0 June, 1998 1 Meg SRAM, R42HD Technology, Hot Aluminum 7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 1 Meg SRAM - R42HD Technology, Hot Al - Fab 4 Device: 7C109 (7C109H)


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    PDF R42HD CY7C109/CY7C1009 CY7C109 7C109H) R42HD 32-pin, 400-mil SOJ package MSL 7C109A CY7C109 JESD22 R42HD FAB4

    cy7c109l-15vi

    Abstract: CY7C109L15VI CY7C109L CY7C1009 CY7C109 CY7C1009-15VI cy7c109-15zc CY7C109-15VI
    Text: 7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low-power version) • 2.0V Data Retention (Low-power version) • Automatic power-down when deselected


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    PDF CY7C109 CY7C1009 CY7C109 CY7C1009 cy7c109l-15vi CY7C109L15VI CY7C109L CY7C1009-15VI cy7c109-15zc CY7C109-15VI

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05038 Spec Title: 7C109B, CY7C1009B 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra PRAS Replaced by: NONE 7C109B CY7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The 7C109B/CY7C1009B is a high-performance CMOS


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    PDF CY7C109B, CY7C1009B CY7C109B CY7C1009B 400-mil-wide 32-pin 300-mil-wide CY7C109B/CY7C1009B

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


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    PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    Untitled

    Abstract: No abstract text available
    Text: 7C109D CY7C1009D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features • Pin- and function-compatible with 7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


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    PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D 32-pin 400-Mil CY7C1009D 300-Mil

    CY7C1009

    Abstract: CY7C109
    Text: fax id: 1047 7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected


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    PDF CY7C109 CY7C1009 CY7C1009 CY7C109

    81c78

    Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
    Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M


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    PDF 2147-35C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35M 2148-45C 81c78 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference

    7C109A

    Abstract: CY7C106A CY7C109 JESD22
    Text: Qualification Report December 1996 QTP# 96053/96081, Version 1.2 1 Meg SRAM - R28 Technology CY7C106A 256K x 4 Static RAM 7C109 128K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part


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    PDF CY7C106A CY7C109 32-pin, 400-mil 7C109A 85C/85 CY7C109-VCB CY7C109-VC 7C109A CY7C106A CY7C109 JESD22

    Untitled

    Abstract: No abstract text available
    Text: 7C109B CY7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then


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    PDF CY7C109B CY7C1009B

    CY7C1009V33

    Abstract: CY7C109V33
    Text: 3 CY7C1009V33 7C109V33 PRELIMINARY 128K x 8 Static RAM Features memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write


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    PDF CY7C1009V33 CY7C109V33 CY7C1009V33 CY7C109V33

    MSM 6290

    Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


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    PDF 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C MSM 6290 msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


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    PDF CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309

    Untitled

    Abstract: No abstract text available
    Text: ^ SS WS CYPRESS PRELIMINARY , .^= 131,072 x 8 Static R/W RAM SEMICONDUCTOR Features Functional Description • H ighspeed — tAA = 25 ns T h e CY 7C108 an d CY 7C109 are high-perform anceC M O S static R A M s organized as 131,072 w ords by 8 bits. Easy m em ory ex­


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    PDF 7C108 7C109 CY7C109

    Untitled

    Abstract: No abstract text available
    Text: 7c109A: Thursday, November 19,1992 Revision: Thursday, February 18,1993 7C109A PRELIMINARY CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW


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    PDF 7c109A: CY7C109A CY7C109A

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: 7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The 7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


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    PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1089 =mmmm rrm - CY7C1009V33 C 7C109 V33 PRELIMINARY 128K x 8 Static RAM memory expansion is provided by an active LOW chip enable CE-| , an active HIGH chip enable (CE2), an active LOW out­ put enable (OE), and three-state drivers. Writing to the device


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    PDF CY7C1009V33 Y7C109

    Untitled

    Abstract: No abstract text available
    Text: 128Kx 8 Static RAM Features Functional D escription • High speed — *aa = 20 ns • CMOS for optimum speed/power • Low active power — 770 mW • Low standby power — 165 mW • Automatic power-down when deselected • TTL-compatible inputs and outputs


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    PDF 128Kx CY7C109 CY7C109â 32-Lead 400-Mil) 7C109â

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1047 7C109 CY7C1009 ^C YPR ESS 128K x 8 Static RAM active HIGH chip enable CE 2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE 2 ) input HIGH. Data on


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    PDF CY7C109 CY7C1009

    Untitled

    Abstract: No abstract text available
    Text: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum


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    PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 32-pin 108/9-J

    G 1009l

    Abstract: CY7C1009 CY7C109
    Text: fax id: 1047 7C109 CY7C1009 CYPRESS 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W ou tput enable (OE), and three -state drivers. W riting to the device is a cco m ­ plished by takin g chip enable one (CE-|) and w rite enable (WE)


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    PDF CY7C109 CY7C1009 CY7C1009 G 1009l

    V32 Package

    Abstract: CY7C1009V33 CY7C109V33
    Text: CY7C1009V33 7C109V33 iF c y p r e s s 128K x 8 Static RAM Features memory expansion is provided by an active LOW Chip Enable CE-| , an active HIGH Chip Enable (CE2), an active LOW Out­ put Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable one (CE-|) and Write


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    PDF CY7C1009V33 CY7C109V33 128Kx CY7C109V33/CY7C1009V33 V32 Package CY7C1009V33 CY7C109V33

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS 128Kx 8 Static RAM Features Functional D escription • High speed — t/\A = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 jiW • Automatic power-down when


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    PDF CY7C109A 128Kx CY7C109A 0233-A 25aibb2

    Untitled

    Abstract: No abstract text available
    Text: C Y 7 C 1 0 0 9 C Y 7 C 1 0 9 CYPRESS 128K 8 Static RAM active HIGH chip enable CE2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom­ plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on


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