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    78L08U Search Results

    78L08U Result Highlights (1)

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    HA178L08UA-TL-E Renesas Electronics Corporation 3 Terminal Regulators, UPAK, / Visit Renesas Electronics Corporation
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    78L08U Price and Stock

    Nisshinbo Micro Devices NJM78L08UA-TE1

    IC REG LINEAR 8V 100MA SOT89
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    DigiKey NJM78L08UA-TE1 Cut Tape 62,966 1
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    NJM78L08UA-TE1 Digi-Reel 62,966 1
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    NJM78L08UA-TE1 Reel 61,000 1,000
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    Mouser Electronics NJM78L08UA-TE1 9,844
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    Master Electronics NJM78L08UA-TE1 1,000
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    Diotec Semiconductor AG DI78L08UAB

    VR SOT89 30V 7.68V 8.32V 125DEG
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    DI78L08UAB Digi-Reel 1,000 1
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    DI78L08UAB Cut Tape 1,000 1
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    Mouser Electronics DI78L08UAB
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    Newark DI78L08UAB Cut Tape 1,000 1
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    DI78L08UAB Reel 1,000
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    TME DI78L08UAB 935 5
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    Nisshinbo Micro Devices NJM78L08UA

    IC REG LINEAR 8V 100MA SOT89
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    DigiKey NJM78L08UA Tube
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    Nisshinbo Micro Devices NJM78L08UA-TE2

    NJM78L08UA-TE2
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    Mouser Electronics NJM78L08UA-TE2 9,579
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    Master Electronics NJM78L08UA-TE2
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    New Japan Radio Co Ltd NJM78L08UA-TE1

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    Bristol Electronics NJM78L08UA-TE1 1,000
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    Chip1Stop NJM78L08UA-TE1 Cut Tape 4,702
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    78L08U Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    78L08U

    Abstract: No abstract text available
    Text: ST 78L08U 3-Terminal Positive Voltage Regulator Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Input Voltage VI 30 V Power Dissipation Ptot 800 Operating Temperature Topr - 20 to + 120 O Ts - 55 to + 150 O Storage Temperature Range 1) 1)


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    78L08U OT-89 78L08U PDF

    Untitled

    Abstract: No abstract text available
    Text: ST 78L08U 3-Terminal Positive Voltage Regulator Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Input Voltage VI 30 V Power Dissipation Ptot 800 Operating Temperature Topr - 20 to + 120 O Ts - 55 to + 150 O Storage Temperature Range 1) 1)


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    78L08U OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST 78L09U 3-Terminal Positive Voltage Regulator Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Input Voltage VI 35 V Power Dissipation Ptot 800 Operating Temperature Topr - 20 to + 120 O Ts - 55 to + 150 O Storage Temperature Range 1) 1)


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    78L09U 78L08U OT-89 PDF

    OP6180

    Abstract: CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0
    Text: AN10951 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P Rev. 1 — 10 December 2010 Application note Document information Info Content Keywords Doherty architecture, Digital PreDistortion DPD , IS-95, multi-carrier


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    AN10951 BLF7G20LS-90P BLF7G21LS-160P IS-95, BLF7G20LS-90P, BLF7G21LS-160P OP6180 CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0 PDF

    78L08

    Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


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    AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544 PDF

    OP6180

    Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
    Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power


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    AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118 PDF

    GRM32ER7YA106K88L

    Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
    Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station


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    AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E PDF

    TB240

    Abstract: F5 ferrite
    Text: December 18, 2014 TB240 Frequency=1.5-120MHz Pout=100W Gain=20dB Vds=24Vdc Idq=0.6A Efficiency=57-70% LR2501 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com December 18, 2014 120.0 25.0 90.0 23.0 60.0 21.0 30.0 19.0


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    TB240 5-120MHz 24Vdc LR2501 TB240 24Vdc, 1111N102GW500 111X103KW500 F5 ferrite PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


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    AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


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    AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d PDF

    Rogers 3006

    Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


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    AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109 PDF

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


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    AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X PDF

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


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    AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222 PDF

    NJM 78L08UA-ND

    Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


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    AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor PDF