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    Phoenix Contact 2277598

    DIN RAIL ADAPTER
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    Amphenol Communications Solutions 77598-120

    77598-120-LEAD ASSY
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    NI 777598-01

    DAQ DEVICE DIGITAL I/O PXI
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    Weidmüller Interface GmbH & Co. KG 1775984001

    SL-SMT 5.08HC/08/180G 1.5SN BK R
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    77598 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR R1002

    Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing


    Original     		PDF R1002 MIL-STD-883 TRANSISTOR R1002 R1002 TRANSISTOR R1002 84-1LMI XR1002

    B1002

    Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF B1002 26-Jun-02 MIL-STD-883 B1002 XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100

    TRANSISTOR R1002

    Abstract: R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 May 2002 - Rev 01-May-02 Features Chip Device Layout y High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 3.0 dB Noise Figure 18.0 dB Image Rejection 100% On-Wafer RF and DC Testing


    Original     		PDF R1002 01-May-02 MIL-STD-883 TRANSISTOR R1002 R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002

    B1000

    Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF

    Mimix phase shifter

    Abstract: 84-1LMI D1000
    Text: 17.0-27.0 GHz GaAs MMIC Vector Modulator D1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 17.0-27.0 GHz Frequency Range 8.0 dB Typical Insertion Loss Continuous Phase Control Control Voltage from -1.5 to 0 VDC 2.33 mm X 2.50 mm Die Size 100% On-Wafer RF, DC and Insertion Loss Testing


    Original     		PDF D1000 MIL-STD-883 Mimix phase shifter 84-1LMI D1000

    transistor R1001

    Abstract: R1001 84-1LMI XR1001
    Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 August 2001 - Rev 8/01/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 5.0 dB Typical Small Signal Conversion Gain 4.0 dB Typical Noise Figure 12.0 dB Typical Image Rejection 2.90 mm X 2.50 mm Die Size 100% On-Wafer RF and DC Testing


    Original     		PDF R1001 MIL-STD-883 transistor R1001 R1001 84-1LMI XR1001

    B1002

    Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size


    Original     		PDF B1002 MIL-STD-883 B1002 84-1LMI XB1002 OC 140 germanium transistor b1002 100

    pHEMT transistor MTBF

    Abstract: BA0047
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier 28LN2BA0047 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 15.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF 28LN2BA0047 01-May-02 MIL-STD-883 22Mar2002 22Mar20 BA0047 22Mar200 28LN2BA004 pHEMT transistor MTBF BA0047

    XB1001

    Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS

    P115W

    Abstract: p115 p0049 34-1P
    Text: 24.0-32.0 GHz GaAs MMIC Low Noise Amplifier 28LN3UA0049 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Self-biased Architecture 20.0 dB Small Signal Gain 2.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF 28LN3UA0049 01-May-02 MIL-STD-883 P115W p115 p0049 34-1P

    PCB Rogers RO4003

    Abstract: No abstract text available
    Text: 17.0-27.0 GHz GaAs MMIC Surface Mount Buffer Amplifier B1001P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 19.0 dB Small Signal Gain 3.5 dB Noise Figure


    Original     		PDF B1001P1 01-May-02 XB1001 PCB Rogers RO4003

    diode p1000

    Abstract: P1000 P1000J 84-1LMI 55VID vg34c
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 17.0-24.0 GHz Frequency Range 18.0 dB Typical Small Signal Gain On-Chip Output Power Detector +37.0 dBm Typical Third Order Intercept Point IP3 Operates at +5.5 VDC


    Original     		PDF P1000 MIL-STD-883 diode p1000 P1000 P1000J 84-1LMI 55VID vg34c

    r1003 transistor

    Abstract: TRANSISTOR R1003 r1003 XR1003 84-1LMI pHEMT transistor MTBF R100-3
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1003 October 2001 - Rev 10/05/01 Features Chip Device Layout 20.0-32.0 GHz Frequency Range 17.0 dB Typical Conversion Gain 3.0 dB Typical Noise Figure 22.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF R1003 MIL-STD-883 r1003 transistor TRANSISTOR R1003 r1003 XR1003 84-1LMI pHEMT transistor MTBF R100-3

    84-1LMI

    Abstract: P1001
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2001 - Rev 6/06/01 Features Chip Device Layout P1001 ar y 26.0-40.0 GHz Frequency Range 12 dB Typical Small Signal Gain Excellent Input/Output Return Loss +36.0 dBm Typical Third Order Intercept Point IP3


    Original     		PDF P1001 MIL-STD-883 84-1LMI P1001

    transistor R1001

    Abstract: mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC
    Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Sub-Harmonic Receiver 5.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF R1001 01-May-02 MIL-STD-883 transistor R1001 mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC

    R1000 resistor

    Abstract: XR1000 R1000 XH1000 receiver mmic sl353 pHEMT transistor MTBF
    Text: 17.0-27.0 GHz GaAs MMIC Receiver R1000 May 2002 - Rev 01-May-02 Chip Device Layout Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF R1000 01-May-02 MIL-STD-883 R1000 resistor XR1000 R1000 XH1000 receiver mmic sl353 pHEMT transistor MTBF

    U1001

    Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
    Text: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size


    Original     		PDF U1001 MIL-STD-883 U1001 pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598

    harmonic mixer

    Abstract: 84-1LMI H1000
    Text: 19.0-25.0 GHz GaAs MMIC Harmonic Mixer H1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 19.0-25.0 GHz Frequency Range 8X, 10X or 12X Pump Operation 1.9-2.5 GHz Pump Frequency 0.5-1.0 GHz Recovered IF Frequency 30 to 50 dB Conversion Loss 2.33 mm X 2.00 mm Die Size


    Original     		PDF H1000 MIL-STD-883 harmonic mixer 84-1LMI H1000

    RD36K

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2002 - Rev 26-Jun-02 Features Chip Device Layout P1001 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain


    Original     		PDF P1001 26-Jun-02 MIL-STD-883 RD36K

    BA0050

    Abstract: No abstract text available
    Text: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier 28LN3BA0050 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF 28LN3BA0050 01-May-02 MIL-STD-883 Mar2002 BA0050 BA0050 3BA0050

    XP1002

    Abstract: 84-1LMI P1002 XB1002 XU1001 420 MMIC
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 May 2002 - Rev 01-May-02 Features Chip Device Layout P1002 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain


    Original     		PDF P1002 01-May-02 MIL-STD-883 XP1002 84-1LMI P1002 XB1002 XU1001 420 MMIC

    diode p1000

    Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector


    Original     		PDF P1000 01-May-02 MIL-STD-883 diode p1000 P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram

    P1002

    Abstract: 84-1LMI Mimix Broadband
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 June 2001 - Rev 6/06/01 Features Chip Device Layout P1002 ar y 26.0-40.0 GHz Frequency Range 12 dB Typical Small Signal Gain On-Chip Output Power Detector +36.0 dBm Typical Third Order Intercept Point IP3 Operates at +5.5 VDC


    Original     		PDF P1002 MIL-STD-883 P1002 84-1LMI Mimix Broadband

    A005

    Abstract: No abstract text available
    Text: 25.0-34.0 GHz GaAs MMIC Low Noise Amplifier 28LN2UA0054 May 2002 - Rev 01-May-02 Features Chip Device Layout y Receiver Front End Small Size 18.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF 28LN2UA0054 01-May-02 MIL-STD-883 28LN2U 2Mar20 A005