BT153
Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,
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7110fl2t,
T0-220AB
T0-220AB.
BT153
TAG thyristor
Thyristor TAG
thyristor TAG 13
BT153 fast turn off
philips thyristor 239
thyristor TRIGGER PULSE TRANSFORMER
7Z82062
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MCD288
Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
Text: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8
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711Dfl2b
16-bit
MCD288
The Diode with Package Outlines 1993
SOT96A
1545A
pulse to sinewave convertor
DDSS431
TDA1545A
TDA1545AT
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BUK10B-50US
Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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7110fl2b
BUK106-50L7S
BUK106-50LP/SP
BUK106-50L/S
BUK106-50I7S
BUK10B-50US
philips ldh
d6506
BUK106-50L
BUK106-50S
buk106
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BUK426-100B
Abstract: transistor BU 110 BUK426-100A
Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode
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BUK426-1OOA/B
7110fl2t
D0441EG
OT199
-100A
-100B
BUK426-100B
transistor BU 110
BUK426-100A
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25CC
Abstract: AM2952 MB2052 MB2052B
Text: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V
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16-bit
AM2952
500mA
MB2052
25CC
MB2052B
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7FLU
Abstract: pin configuration of i3 processor FM SOUND PROCESSOR TDA3857 IEC134 TDA3856 TDA3858 SAW-Filter
Text: INTEGRATED CIRCUITS S K l i i T TDA3857 Quasi-split sound processor with two FM demodulators Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS V j? 7110fl2b D07fl00S T27 •
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TDA3857
7110fl2b
D07fl00S
TDA3856
TDA3858
7FLU
pin configuration of i3 processor
FM SOUND PROCESSOR
TDA3857
IEC134
TDA3856
TDA3858
SAW-Filter
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vexta
Abstract: TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor
Text: INTEGRATED CIRCUITS & S M U T TDA8742; TDA8742H Satellite sound circuit with noise reduction Product specification Supersedes data of November 1992 File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS 7110fl2fc. 0 0 7 6 1 3 4
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TDA8742;
TDA8742H
7110fl2fci
Q07fll34
7110fl2b
vexta
TI TV multi band tuner IC Divider
QFP44
SDIP42
TDA8742
TDA8742H
0.1 mKF capacitor
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BUK452-100B
Abstract: BUK452-100A T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl2b
BUK452-100A/B
T0220AB
BUK452-100B
BUK452-100A
T0220AB
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RZ2731B60W
Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.
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RZ2731B60W
711002b
004b5Ã
RZ2731B60W
tRANSISTOR 2.7 3.1 3.5 GHZ cw
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
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SOT227B package
Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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711082b
ESM4045A
lESM4045D
4045D
ICsat/50
Bon11
Csat/50;
711002b
SOT227B package
mb 428
mb 428 ic data
ESM4045D
SOT227A
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OM976
Abstract: 0071547 philips hybrid OM976
Text: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance
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7110a2fc.
OM976/1
OM976/1
OM976
0071547
philips hybrid OM976
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LTD101R-11
Abstract: dgs70 G-324
Text: PHILIPS INTERNATIONAL . bDE D • 7110fl2b 0057018 « m mPHIN Philips C o m p o n en ts Data sheet status Product specification date of issue July 1990 LTD101 Liquid crystal display DEVICE DESCRIPTION The LTD101 is a 3 1/2-digit 7 segment clock display with
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711002b
0DS701Ã
LTD101
LTD101
LTD101R-11
LTD101R-11
dgs70
G-324
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philips blx15
Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Text: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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7110fl2ti
ODb3471
BLX15
philips blx15
BLX15
Philips Application BLX15
TRANSISTOR blx15
Blx15 philips
4312 020 36640
blx15 push pull
PHILIPS 4312 amplifier
carbon resistor
CIL TRANSISTOR 188
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BC331
Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Text: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
BC337
BC331
BC331 transistor
transistor BC331
bc337-40 npn transistor
BC337A
BC337-26
TRANSISTOR BC338
BC327
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BFQ291
Abstract: BFQ290
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product
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33-oS
BFQ291
BFQ290.
BFQ291
OT172A1
00M5b74
MBC869
OT172A1.
BFQ290
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diode t62
Abstract: No abstract text available
Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,
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BDT62
BDT62B;
7110fl2b
0043S3Ö
BDT63C
BDT62;
7110flat
diode t62
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D 1991 AR
Abstract: BD945
Text: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fl2ti
BD944;
O-220.
BD947
D 1991 AR
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SflE D • 7110fl2b GGS30Sfl TOT « P H I N _ BTR59 S E R IE S FAST GATE TURN-OFF THYRISTORS T h y risto rs in S O T -9 3 envelopes w hich are capable of being turned both on and o ff via the gate, and
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7110fl2b
GGS30Sfl
BTR59
--800R
711002b
M3226
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Untitled
Abstract: No abstract text available
Text: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.
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BD202F;
BD204F
BDX78F
7110fl2t
0042fl5b
T-33-17
OT186
BD201F,
BD203F
BDX77F
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946f
Abstract: No abstract text available
Text: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.
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BD944F
BD948F
7110fl2b
OT186
BD943F,
BD945Fand
BD947F.
BD946F
BD948F
946f
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BGY888
Abstract: DIN45004B SC16
Text: D IS C R E T E S E M IC O N D U C T O R S BGY888 CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 December 1994 i• Philips Semiconductors PHILIPS P H ILIP S 7110fl2b 0007034 I 83^ This Material Copyrighted By Its Respective Manufacturer
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BGY888
7110fl2b
OT115J2
14UIU
amplif588
711002b
OT115J2.
711D02fc>
BGY888
DIN45004B
SC16
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tbf 494
Abstract: OA85 OA95 PLCC28 TDA8776 TDA8776K
Text: INTEGRATED CIRCUITS TDA8776 10-bit, 500 MSPS digital-to-analog converter Preliminary specification File under Integrated Circuits, IC02 1995 Mar 28 Philips Semiconductors PHILIPS PH IL IP S •I 7110fl2L. 0 0 3 7 ^ 4 5 flSE ■ This Material Copyrighted By Its Respective Manufacturer
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TDA8776
10-bit,
10-bit
711082b
tbf 494
OA85
OA95
PLCC28
TDA8776
TDA8776K
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