Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 123445 6789ABCDBEF 4C45E57457DC7 234C2 5D C4 E4E ! "F56#$ 6#$ 6%%5 2& 17E '4C3 F %63 A48 7CD45*4DCCBC 5 4B4 F565 A7"* 7+ C24 "2 734544 2B2C 2, 4 1E3
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123415678429ABCD58
6789ABCDBEF
E5785
7879F
7879C
127AF37
A4BCD4EF569
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BC37D
Abstract: No abstract text available
Text: 1 1 1 11223345 1 6789ABCDEF199A11A99A 1 9A D 91 Applications • • • • • • • • • • • Social Alarms Narrowband ultra low power wireless systems with channel spacing down to 4 kHz 170 / 315 / 433 / 868 / 915 / 950 MHz ISM/SRD band
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6789ABCDEF1
CFR47
BC37D
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 123435 6789ABCDBEF 4C45E57457DC7 234C2 5D C4 E4E F6!" 6!" 6#"52$ 17E %4C3 F5&635'A48 7CD45 4DCCBC5 4B4 F565 A7 ) 7* C24 1E x × FBAEF7FD6D
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123415678429ABCD58
6789ABCDBEF
52D5554
79DAB9
9D7AB8DB98
A4BCD4EF566
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 12134456 6789ABCDBEF 4C45E57457DC7 234C2 5D C4 E4E ! " #F56$ 9 6$ 9 6$ 95 2% 17E &4C3 F '53 A48 7CD45*4DCCBC 5!4B4 F565 A7#* 7+ C24 1E x × FBAEF7FD6D
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123415678429ABCD58
6789ABCDBEF
2D5554
7869F
7869C
/07AF17
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EBC91
Abstract: BA871
Text: 12345657 1 7 1 9E9 79AF8FCE7 71 61 91 71 87791 7 7B1 A 1 6789ABC 91 6 1 !"C1 A 1 EBAEA8BA""7B91 1 A8E#1 9#77E1 D$%1 E!#! "79F1 71 61 !91 !8C1 7!&B791 A 1 71 635'1 &1 B7 &E7(1 81 EA91 C1
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6789ABC
BAE799
AE-91
B7997
971A871AB1!
16789ABC
8E791
E79F116789ABC
1AB197"
16789ABC1
EBC91
BA871
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 12134456 6789ABCDBEF 4C45E57457DC7 234C2 5D C4 E4E ! " #F5$ 9 $ 9 $ 95 2% 17E &4C3 F ' $3 A48 7CD45*4DCCBC 5!4B4 F565 A7#* 7+ C24 1E x × FBAEF7FD6D
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123415678429ABCD58
6789ABCDBEF
2D5554
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62e24
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 1234452 6789ABCDBEF 4C45E57457DC7 234C2 5D C4 E4E ! "F566# 66# 6#$5 2% 17E &4C3 F '3 A48 7CD45*4DCCBC 5 4B4 F565 A7"* 7+ C24 1E3 x × × × FBAEF7FD6D
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123415678429ABCD58
6789ABCDBEF
53D4E5C
4D454
52D5565
79DAB9
9D7AB8DB98
7859F
7858C
62e24
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4
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W94AD6KB
W94AD2KB
A01-004
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A1833
Abstract: No abstract text available
Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4
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MT46H128M16LF
MT46H256M16L2
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
09005aef83a73286
A1833
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Untitled
Abstract: No abstract text available
Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07
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HYB18M256320CFX
HYE18M256320CFX
256-Mbit
18M256320CFX
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MT46H64M16
Abstract: 6S55 MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
MT46H64M16
6S55
MT46H64M16LF
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s11 stopping compound
Abstract: DEF01
Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
138ns.
09005aef8331b3e9/Source:
09005aef8331b3ce
s11 stopping compound
DEF01
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Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features
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512Mb:
MT48H32M16LF
MT48H16M32LF
09005aef81ca5de4/Source:
09005aef81ca5e03
MT48H32M16LF
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
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DS05-11464-1E
MB81EDS516445
MB81EDS516445
64-bit
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circuit diagram of ddr ram
Abstract: HYB18M1G320BF
Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00
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HYB18M
HYE18M
18M1G320BF
HYB18M1G320BF
HYE18M1G320BF
02022006-J7N7-GYFP
circuit diagram of ddr ram
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ELPIDA lpddr
Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)
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MT46H64M16LF
MT46H32M32LF
09005aef83d9bee4
ELPIDA lpddr
1GB-x16
samsung lpddr
LPDDR2 SDRAM samsung
MT46H64M16LF cross
infineon power cycling
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
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DS05-11463-2E
MB81EDS516545
MB81EDS516545
64-bit
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Untitled
Abstract: No abstract text available
Text: DM5150 720H 1 channel NTSC/PAL Decoder 1 1 1 DAVICOM Semiconductor, Inc. DM5150 720H 1 channel NTSC/PAL Decoder 23431567741 Preliminary Version: DM5150-DS-P01 February 27, 2013 Preliminary Doc No: DM5150-DS-P01 February 27, 2013 1 DM5150 720H 1 channel NTSC/PAL Decoder1
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DM5150
DM5150-DS-P01
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TDA 11136
Abstract: SLUA379 SLUU265A bq20z70-V150 SLUA359 SLUA372 0x2673 TDA 1343 code BQ voltage protection for n cell lion battery SBS 15 battery
Text: bq20z70-V150 + bq29330, bq20z75 Technical Reference Manual Literature Number: SLUU265A October 2006 – Revised August 2007 2 SLUU265A – October 2006 – Revised August 2007 Submit Documentation Feedback Contents 1 2 Preface . 7
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bq20z70-V150
bq29330
bq20z75
SLUU265A
TDA 11136
SLUA379
SLUU265A
SLUA359
SLUA372
0x2673
TDA 1343
code BQ voltage protection for n cell lion battery
SBS 15 battery
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef8331b3e9
09005aef8331b3ce
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Untitled
Abstract: No abstract text available
Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A1234567899AAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A A BCDECAF 123314567891A758BCD814E1F3D167D1F1C5A36 3DAFA99
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234567899A
123314567891A758BCD814E1F3
167D1
C75C5
7533D79
5C5316918D
D814E12
78B8D
D7D167D1
6E91E5B1C6
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Untitled
Abstract: No abstract text available
Text: 123245663789ABC77 7 B77161 5B 58851 564981 1 1 1 !""1A"7851 1 F7#7"19 $1 17658%A51 1 &921 92581A964B 7961 1 ' A5""561"96#158B147"71 1 F! 1 51 A*#51E185%"92149"58"51 1 !"378EE2#7 1 $1 /51 6521 /B771 61 5B 58851 4564981 9%1
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123245663789ABC77
92581A964
58B14
51E185%
58B41
147D51
8967A1
4564787963A9B1
22234564787963A9B1
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Am29BDD160GB64C
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
Am29BDD160GB64C
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am29f date code markings
Abstract: am29lv date code markings Am29BDD160GB64C
Text: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
am29f date code markings
am29lv date code markings
Am29BDD160GB64C
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