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    64K 8KX8 CMOS SRAM Search Results

    64K 8KX8 CMOS SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy

    64K 8KX8 CMOS SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor x8

    Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
    Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series


    Original     		PDF ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 PBL3717A L6201/2/3 L6204 smd transistor x8 smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100

    P-Channel Depletion-Mode

    Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
    Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385


    Original     		PDF 2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    W986416EH

    Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
    Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/


    Original     		PDF W78C32C Q4/04 IS25C64A-2 IS25C64A-3 16Kx8 IS25C128-2 W986416EH W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620

    Untitled

    Abstract: No abstract text available
    Text: P4C164LL VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE


    Original     		PDF P4C164LL --28-Pin P4C164LL SRAM116 SRAM116 Oct-2005 Aug-2006

    Untitled

    Abstract: No abstract text available
    Text: P4C164LL VERY LOW POWER 8KX8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE


    Original     		PDF P4C164LL 28-Pin P4C164LL SRAM116 SRAM116 Oct-2005 Aug-2006

    EDI8808CB

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12

    EDI8808CB

    Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
    Text: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, A0-A12 C323 64K 8KX8 CMOS SRAM sram 8kx8

    A3738

    Abstract: CA1023 8kx8 sram
    Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, D02VSS 0-A12 A3738 CA1023 8kx8 sram

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8808CA35/45/55/70 High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power 64Kbit CMOS Static CMOS Static RAM organized as 8192 words by 8 bits Random Access Memory • Access Times 35,45,55, and 70ns


    OCR Scan     		PDF EDI8808CA35/45/55/70 EDI8808CA 64Kbit EDI8808CA35/45/55/70 EDI8808CA35/45/S5/70

    26R2-5

    Abstract: No abstract text available
    Text: m EDI8808CA35/45/55ÏÏ0 o \ High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs, and 8 common


    OCR Scan     		PDF EDI8808CA35/45/55/70 EDI8808CA MIL-STD-883C, EDI8808CA35/45/55/70 26R2-5

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    sram 8kx8 memory map

    Abstract: 8kx8 eprom pin diagram 80c31 application MAX11213
    Text: <U x_0 ^EDI 11* Aft ^ The fu tu re .to d a y , • ■ ■ E B H 6 0 7 G 31 IxPak Family 8/12 MHz h h Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM h h h h h ih h h h im h Features The EDH 607C31 ^PAK family from EDI Is the first in a series of high density microcomputer


    OCR Scan     		PDF 80C31 32Kx8 MCS-51 687C31, 697C31, 607C31 sram 8kx8 memory map 8kx8 eprom pin diagram 80c31 application MAX11213

    8kx8 eprom pin diagram

    Abstract: XTAL 12MH 80C31 F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
    Text: 3230114 E L E C T R O N I C D E S I G N S INC ELECTRONIC DESIGNS IN C 85D 00184 B S D E | 323011M '37 D □□001A4 3 EDH 607C31 ¡S ri J I jaPak Family 8/12 MHz T h e fu tu r e . .to d a y . Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM


    OCR Scan     		PDF 3S3011M 607C31 80C31 32Kx8 607C31 80C31, or32Kx8 8kx8 eprom pin diagram XTAL 12MH F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE

    K4505

    Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
    Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4


    OCR Scan     		PDF IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80

    sram 8kx8 memory map

    Abstract: 80C31 Development Board 80C31 F800H MCS-51 Ram 64k 8kX8 80C31 instruction set UPAK
    Text: açx.o ^ ' it* ' E M 607G31 jxPak Family 8/12 MHz Th e fu tu re . . . today. Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM Features The EDH 607C31 uPAK family from EDI is the first in a series of high density microcomputer modules based on the industry-standard 80C31


    OCR Scan     		PDF 607G31 80C31 32Kx8 607C31 80C31, or32Kx8 sram 8kx8 memory map 80C31 Development Board F800H MCS-51 Ram 64k 8kX8 80C31 instruction set UPAK

    taa 480

    Abstract: No abstract text available
    Text: 64-bit Cache M odule A S 7 M 6 4 T 3 A Series Features Logic Block Diagram ♦ 8-bit 5V asynchronous tag , — * — » -► — ► ♦ High speed: tAA= 12-15 ns r LA 5 -19 I A4B A3B ECS OE — — — — ► A4 ► ► CE ► OE 1 “ I I A4A A3A E£S


    OCR Scan     		PDF 64-bit AS7M64T3256A-12) SRI655 32/64K 32/64K taa 480

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    BR93LC46A

    Abstract: BR9021B
    Text: 7 f l 2 í m tí 0 0 0 7 3 0 0 M□ Lf WDHffl RHri EEPROM •Serial 3-wire Operating voltage Capacity Bit Power Organization (Word X Bit) Part No. supply (V) Read(V) Write(V) Curent consunption(Max) Write cycle Active Stand-by time(Max) <mA) Operating temp Rewritability


    OCR Scan     		PDF 64x16 128X16 256X16 BR93LL46/F BR93LC46/F BR93LC46A/AF BR93LC56/F BR93LC56A/AF BR93LC66/RF BR93LC66A/ARF BR93LC46A BR9021B

    Untitled

    Abstract: No abstract text available
    Text: H ig h p e r f o r m a n c e 2 5 6 / 5 12 K b y te 3.3V C ac h e m o d u le s •■ | A S 7 M 6 4 T 3 2 5 6 A A sync A S 7 M 6 4 T 3 5 1 2 A A sync R i.rct A S7M 64T3256B B u rst A S 7 M 6 4 T 3 5 1 2B B u rst Low voltage 2 5 6 /5 1 2 KByte cache modules w ith tag


    OCR Scan     		PDF 64-bit AS7M64T32S6A AS7M64T3512A AS7M64T3256A 64T3512A 64T3256A-12) 60MHz* 64T3256A 3256B

    Untitled

    Abstract: No abstract text available
    Text: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8


    OCR Scan     		PDF M2716 M2764A TS27C64A M27128A M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024

    HC6364

    Abstract: IH00 Honeywell sram 8Kx8
    Text: HONEYWELL/S S E C 15E D | MSS1Ô72 0000433 3 | Honeywell HC6464 Military Products T - 4 d-2 5 -0 5 ' 64K x 1 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 jim Process • Similar Characteristics to HC6364 - 8Kx8 SRAM


    OCR Scan     		PDF HC6464 1x101 1x109 HC6364 IH00 Honeywell sram 8Kx8

    FM1608

    Abstract: FM1608-120-P FM1608-120-S
    Text: FM1608 R aM TR O N 64Kb Bytewide F RAM Memory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • Organized as 8,192 x 8 bits • High endurance 10 Billion 10 10 read/writes • 10 year data retention at 85° C • NoDelay write


    OCR Scan     		PDF FM1608 FM1608 FM1608-120-P FM1608-120-S