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SEC/98+ KM616V1000BLT-7L
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Bristol Electronics	KM616V1000BLT-7L		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor KM616V1000BLTI-7L
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Bristol Electronics	KM616V1000BLTI-7L		35			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor KM616V1000BLTI7L Electronic Component
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ComSIT USA	KM616V1000BLTI7L		7,824			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor KM616V1000BLT-7L INSTOCK
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Chip 1 Exchange	KM616V1000BLT-7L		3,095			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others KM616V1000BLT-7L INSTOCK
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Chip 1 Exchange	KM616V1000BLT-7L		96			1 - 10 - 100 - 1000 - 10000 -	Get Quote

616V1000B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ATPA Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C	Original	PDF	CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
EPM5128LC Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C	Original	PDF	CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
EPM5128LC Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C	Original	PDF	5962-8753903LX 5962-8863701LX 5962-8867003LX 5962-8867809RX 5962-8867809XX 5962-8867810RX 5962-8867811RX 5962-8867812RX 5962-8871309RX 5962-8871310RX EPM5128LC EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1
Untitled Abstract: No abstract text available Text: 616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily	OCR Scan	PDF	KM616V1000B, KM616U1000B KM616V1OOOB 616U1000B 44-TSQ P2-400F/R 616V1000B KM616U1 KM61SV1000B KM616U10008
km616u1000b Abstract: No abstract text available Text: 616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The 616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16	OCR Scan	PDF	KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP
Untitled Abstract: No abstract text available Text: 616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0	OCR Scan	PDF	KM616V1000B, KM616U1000B 100ns 616V1000B 1000B
Untitled Abstract: No abstract text available Text: 616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage	OCR Scan	PDF	KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP 7Tb4142
100PF Abstract: 0213T Text: Preliminary CMOS SRAM K M 6 1 6 V 1 OOOBL / L-L 64Kx16 B it Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The 616V1000BL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536	OCR Scan	PDF	KM616V1OOOBL 64Kx16 180nW 54jiW 216mW I/01-I/08 KM616V1000BLT/LT-L: 400mil KM616V1000BLR/LR-L: 100PF 0213T
KM616U1000B Abstract: KM616V1000B KM616V1000 Text: 616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage	OCR Scan	PDF	KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP als-10 KM616V1000
Untitled Abstract: No abstract text available Text: 616V1000B, KM616U10Q0B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • The 616V1000B and KM616U1000B family are fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating	OCR Scan	PDF	KM616V1000B, KM616U10Q0B 64Kx16 KM616V1000B KM616U1000B 64Kx16 71b4ms GG3b73G