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Text: Preliminary CMOS SRAM KM616U2000 Family 128K x16 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION FEATURES • Process T echnology : 0.4|im C M O S • Organization :128Kx16 • Power Supply Voltage KM 616U2000 Family : 3.0±0.3V • Low Data Retention Voltage : 2V Min
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KM616U2000
128Kx16
616U2000
44-TSO
-400F
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Abstract: No abstract text available
Text: Preliminary CMOS SRAM 616S2000 Family Document Title 128K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History R evisionN o. History Initial Draft Draft Data Octoberber 1 st 1997 Rem ark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to
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KM616S2000
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Untitled
Abstract: No abstract text available
Text: Preliminary 616S2000 Family CMOS SRAM 128K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES G ENERAL DESCRIPTION Process Technology : 0.4|am C M O S Organization :128Kx16 Power Supply Voltage KM 616S 2000 Family : 2.3-3.3V Low Data Retention Voilage : 2V Min
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KM616S2000
128Kx16
44-TSO
-400F
616S2000
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