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Micro Commercial Components MCAC60N10Y-TP MOSFET N-CH 100 60A DFN5060
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCAC60N10Y-TP	Digi-Reel	16,000		1	1 $1.84 10 $1.17 100 $1.84 1000 $0.5698 10000 $0.52536	Buy Now
	MCAC60N10Y-TP	Cut Tape	16,000		1	1 $1.84 10 $1.17 100 $1.84 1000 $0.5698 10000 $0.52536	Buy Now
	MCAC60N10Y-TP	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.46788	Buy Now
Taiwan Semiconductor TSM160N10LCR-RLG MOSFET N-CH 100V 46A 8PDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSM160N10LCR-RLG	Cut Tape	10,449		1	1 $2.45 10 $1.575 100 $2.45 1000 $0.79371 10000 $0.79371	Buy Now
Infineon Technologies AG BSC060N10NS3GATMA1 MOSFET N-CH 100V 14.9/90A 8TDSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSC060N10NS3GATMA1	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $1.03825	Buy Now
Avnet Americas	BSC060N10NS3GATMA1	Ammo Pack		16 Weeks, 3 Days	1	1 $2.58 10 $2.14 100 $1.71 1000 $1.71 10000 $1.71	Buy Now
Newark	BSC060N10NS3GATMA1	Cut Tape	7,357		1	1 $1.38 10 $1.38 100 $1.26 1000 $1.17 10000 $1.17	Buy Now
Bristol Electronics	BSC060N10NS3GATMA1		999			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	BSC060N10NS3GATMA1		3,813		1	1 $1.15 10 $1.15 100 $1.08 1000 $0.9775 10000 $0.9775	Buy Now

Chip1Stop	BSC060N10NS3GATMA1	Cut Tape	20,491			1 $0.887 10 $0.826 100 $0.808 1000 $0.803 10000 $0.741	Buy Now
EBV Elektronik	BSC060N10NS3GATMA1		195,000	17 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BSC060N10NS3GATMA1		155,000		1	1 - 10 - 100 - 1000 - 10000 $1.26	Buy Now
Win Source Electronics	BSC060N10NS3GATMA1		56,500			1 - 10 - 100 $1.011 1000 $0.783 10000 $0.783	Buy Now
Laird, A DuPont Business CM7060N102R-10 CMC 3A 2LN 1.02KOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CM7060N102R-10	Reel	3,000		1,500	1 - 10 - 100 - 1000 - 10000 $1.06563	Buy Now
Sager	CM7060N102R-10		12,000		1,500	1 - 10 - 100 - 1000 - 10000 $1.01	Buy Now
Infineon Technologies AG IAUT260N10S5N019ATMA1 MOSFET N-CH 100V 260A 8HSOF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IAUT260N10S5N019ATMA1	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.0707	Buy Now
Mouser Electronics	IAUT260N10S5N019ATMA1		1,414			1 $4.54 10 $3.44 100 $2.54 1000 $2.08 10000 $2.07	Buy Now
Newark	IAUT260N10S5N019ATMA1	Cut Tape	833		1	1 $2.14 10 $2.14 100 $2.14 1000 $2.14 10000 $2.14	Buy Now
Bristol Electronics	IAUT260N10S5N019ATMA1		125		1	1 $5.152 10 $3.3488 100 $2.4044 1000 $2.2324 10000 $2.2324	Buy Now
Rochester Electronics	IAUT260N10S5N019ATMA1		275,778		1	1 $2.27 10 $2.27 100 $2.13 1000 $1.93 10000 $1.93	Buy Now

Chip 1 Exchange	IAUT260N10S5N019ATMA1		1,889			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IAUT260N10S5N019ATMA1	Cut Tape	1,985			1 $2.44 10 $2.43 100 $2.39 1000 $2.28 10000 $2.28	Buy Now
EBV Elektronik	IAUT260N10S5N019ATMA1			19 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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60N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
60n10 Abstract: IXTH60N10 Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	60N10 TJM15 O-268 728B1 123B1 728B1 065B1 60n10 IXTH60N10	PDF
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface Symbol Test Conditions ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous	Original	ISOPLUS220TM 60N10 728B1 065B1 123B1	PDF
60N10 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220LVTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous	Original	60N10 ISOPLUS220TM 220LVTM 728B1 065B1 123B1 60N10	PDF
60n10 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous	Original	60N10 ISOPLUS220TM 220TM 728B1 065B1 123B1 60n10	PDF
60n10 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous	Original	60N10 ISOPLUS220TM 220TM 728B1 60n10	PDF
IGBT/MOSFET Gate Drive Abstract: OMD32F60ML OMD38L60ML OMD60N10ML OMD75N06ML Text: OMD38L60ML Preliminary Data Sheet OMD75N06ML 60N10ML OMD32F60ML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules With Internal Gate Drive, 3-Phase Bridge Configuration FEATURES • • • • •	Original	OMD75N06ML OMD38L60ML OMD60N10ML OMD32F60ML IGBT/MOSFET Gate Drive OMD32F60ML OMD38L60ML	PDF
70N10 Abstract: 60N10 JESD97 STD60N10 STP70N10 Text: 60N10 STP70N10 N-channel 100 V - 0.016 Ω - 60 A TO-220 / DPAK low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)max ID 60N10 100 V <0.0195 Ω 60 A STP70N10 100 V <0.0195 Ω 65 A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)	Original	STD60N10 STP70N10 O-220 O-220 70N10 70N10 60N10 JESD97 STD60N10 STP70N10	PDF
OM55N10NK Abstract: OM60N10NK OM75N05NK OM75N06NK Text: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)	Original		PDF
Untitled Abstract: No abstract text available Text: 60N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener protected SuperMESH 5 Power MOSFET in a ISOTOP package Datasheet — preliminary data Features Oreder code VDSS 60N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area	Original	STE60N105DK5 STE60N105DK5	PDF
bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original		PDF
55n10 Abstract: 75n05 60n10 75N06SA 75n06 OM55N10SA OM55N10SC OM60N10SC OM75N05SA OM75N05SC Text: OM55N10SC 60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •	Original	OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA O-254 O-258 MIL-S-19500, 55n10 75n05 60n10 75N06SA 75n06	PDF
Untitled Abstract: No abstract text available Text: 60N10F7 N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max ID PTOT 60N10F7 100 V 0.018 Ω 12 A 5W 2 3 • Ultra low on-resistance	Original	STL60N10F7 DocID024453	PDF
SSH60N06 Abstract: No abstract text available Text: SA M S UN G E L E C T R O N I C S INC b4E ]> 7^4142 SSH60N06/60N10 FEATURES • • • • • • • • GG 15 4b S 45b « S M Ò K N-CHANNEL POWER MOSFETS TO-3P Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	SSH60N06/60N10 O-220 SSH60N06 SSH60N1 SSH60N10 SSM60N06/60N10 SSH60N06	PDF
60n10 Abstract: ssm60n06 SSH60N06 Text: N-CHANNEL POWER MOSFETS SSH60N06/60N10 FEATURES TO-3P • L o w e r R d s ON • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability	OCR Scan	SSH60N06/60N10 O-220 SSH60N06 SSH60N10 06/60N 60n10 ssm60n06 SSH60N06	PDF

Untitled Abstract: No abstract text available Text: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id	OCR Scan	10/FI STH60N1OFI 60N10 7T2T537 04STL STH60N10/FISTW60N10	PDF
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: OM55N1ÛNK OM75N05NK 60N10NK OM75NQ6NK LOW VOLTAGE, LOW R DS on POWER MOSFETS IN A TO-3 PACKAGE 50V And 60V, Ultra Low RDS(on) Power MOSFETs In A TO-3 Package FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge	OCR Scan	OM55N1Ã OM75N05NK OM60N10NK OM75NQ6NK MIL-S-19500,	PDF
Untitled Abstract: No abstract text available Text: P relim inary Data Sheet OMS75NÛ6ML OMS38L60ML OMS6ONIOML OMS32F60ML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 A m p M od ul es, 3 - P h a s e Bridge Conf igu ra tio n FEATURES • • • • • Isolated Heat Sink	OCR Scan	OMS75N OMS38L60ML OMS32F60ML OMS75N06ML QMS32F60ML 75N06ML 60N10ML 38L60ML 32F60ML	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q	PDF
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E	PDF
Untitled Abstract: No abstract text available Text: OM55N10NK OM75N05NK OM6ONIONK OM75N06NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE R DS on POWER MOSFETS FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low R DS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TX V And S Levels	OCR Scan	OM55N10NK OM75N05NK OM75N06NK MIL-S-19500, 55N10NK 60N10NK 75N06NK 75N05NK 025rom	PDF
qe rts diode Abstract: 60N10 Text: Preliminary Data Sheet OMS75N06ML OMS38L60ML OMS6ONIOML OMS32F6QML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt. 25 To 75 Amp Modules. 3-Phase Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design	OCR Scan	OMS75N06ML OMS38L60ML OMS32F6QML OMS75N06M 0MS32F6QML 75N06ML 60N10ML 38L60ML 32F60ML qe rts diode 60N10	PDF
55n10 Abstract: No abstract text available Text: OM55N1ÛSC 60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA LOW VOLTAGE, LOW R DS 0n POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V. A n d 1 00 V Ultra L o w RDS(on) P o w e r M O S F E T s In T O -2 54 A n d T O-258 Isolated P a c k a g e s	OCR Scan	OM55N1 OM60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA O-258 MIL-S-19500, 55n10	PDF
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D	PDF

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60N10 Search Results

60N10 Price and Stock

Micro Commercial Components MCAC60N10Y-TP

Taiwan Semiconductor TSM160N10LCR-RLG

Infineon Technologies AG BSC060N10NS3GATMA1

Laird, A DuPont Business CM7060N102R-10

Infineon Technologies AG IAUT260N10S5N019ATMA1

60N10 Datasheets Context Search

60n10

Untitled

60N10

60n10

60n10

IGBT/MOSFET Gate Drive

70N10

OM55N10NK

Untitled

bcm 4330

55n10

Untitled

SSH60N06

60n10

Untitled

TDA0161 equivalent

Untitled

Untitled

12N60c equivalent

MTM13N50E

Untitled

qe rts diode

55n10

100N055