TH 2190 Transistor
Abstract: TH 2190 mosfet z24 mosfet
Text: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240R6
TH 2190 Transistor
TH 2190 mosfet
z24 mosfet
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transistor rf m 1104
Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET
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MRF5P21240/D
MRF5P21240R6
transistor rf m 1104
TH 2190
517D107M050BB6A
CDR33BX104AKWS
MRF5P21240R6
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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TH 2190 Transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF5P21240/D
MRF5P21240R6
TH 2190 Transistor
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517d107m035bb6ae3
Abstract: 517D336M250DK6AE3
Text: 517D www.vishay.com Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 h at + 105 °C
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
517d107m035bb6ae3
517D336M250DK6AE3
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MOSFET marking Z4
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240HR6
MRF5P21240HR6
MOSFET marking Z4
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240HR6
MRF5P21240HR6
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Untitled
Abstract: No abstract text available
Text: 517D www.vishay.com Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • Life test to 2000 h at + 105 °C • Material categorization: For definitions of compliance
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 517D www.vishay.com Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 h at + 105 °C
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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517D107M035BB6A
Abstract: 517D 517D226M025JA6A 517D476M035AA6A 6F6S 517D107M100DG6A 517D227M160FR6A 517D475M050JA6A 517D108M063EN6A sprague electrolytic
Text: Type 517D Vishay Sprague Aluminum Capacitors + 105°C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 hours at + 105°C
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22-Sep-00
517D107M035BB6A
517D
517D226M025JA6A
517D476M035AA6A
6F6S
517D107M100DG6A
517D227M160FR6A
517D475M050JA6A
517D108M063EN6A
sprague electrolytic
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TH 2190 mosfet
Abstract: th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor
Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240HR6
TH 2190 mosfet
th 2190
A114
A115
AN1955
C101
JESD22
MRF5P21240HR6
TH 2190 Transistor
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Untitled
Abstract: No abstract text available
Text: 517D www.vishay.com Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 h at + 105 °C
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240HR6
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517D
Abstract: 517D475
Text: 517D Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size Pb-free • Low cost Available • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 hours at + 105 °C
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27-Jun-05
517D
517D475
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7 Segment sm 42056
Abstract: sm 42056 7 segment display sm 42056 Roederstein EK roederstein capacitor ek series Vishay Roederstein EKM en13003 Roederstein EKm 7 Segment common cathode Vishay Roederstein EBR
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd • radial • A xial Aluminum capacitors vishay vse-db0111-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0111-0810
7 Segment sm 42056
sm 42056
7 segment display sm 42056
Roederstein EK
roederstein capacitor ek series
Vishay Roederstein EKM
en13003
Roederstein EKm
7 Segment common cathode
Vishay Roederstein EBR
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517D
Abstract: 107M
Text: 517D Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 hours at + 105 °C
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08-Apr-05
517D
107M
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517D
Abstract: 517D227M100EK6A 107M 517D336M025JA6AE3 517D476M6R3JA6AE3
Text: 517D Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 hours at + 105 °C
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18-Jul-08
517D
517D227M100EK6A
107M
517D336M025JA6AE3
517D476M6R3JA6AE3
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517D
Abstract: No abstract text available
Text: 517D Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size Pb-free • Low cost Available • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 hours at + 105 °C
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08-Apr-05
517D
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2300 vishay
Abstract: No abstract text available
Text: 517D Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size Low cost Solvent resistant construction through 100 WVDC High temperature operation Life test to 2000 h at + 105 °C
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2002/95/EC
11-Mar-11
2300 vishay
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517D
Abstract: No abstract text available
Text: 517D Vishay Sprague Aluminum Capacitors + 105 °C, General Purpose Miniature, Radial Lead FEATURES • High CV per case size Pb-free • Low cost Available • Solvent resistant construction through 100 WVDC • High temperature operation • Life test to 2000 hours at + 105 °C
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24-Mar-05
517D
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Untitled
Abstract: No abstract text available
Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data MRF5P21240R6 replaced by MRF5P21240HR6. H suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110
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MRF5P21240
MRF5P21240R6
MRF5P21240HR6.
MRF5P21240R6
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Untitled
Abstract: No abstract text available
Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240
MRF5P21240R6
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CW20C104K
Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,
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AGA100M050
SKA100M050
AGA100M063
SKA100M063
AFK477M10F24T
AFK686M16D16T
AFK107M16D16T
AFK157M16X16T
AFK158M16H32T
AFK226M16C12T
CW20C104K
CL31B104KBNC
CY20C104M
474j capacitor
CL31B102KBNC
UP36BA0350
CW15C103K
ECPU01105MA5
CL21B104KBNC
CW20C473K
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th 2190
Abstract: TH 2190 mosfet TH 2190 Transistor C 2640 rf transistor rf push pull mosfet power amplifier AN1955 CDR33BX104AKWS MRF5P21240 MRF5P21240HR6 MRF5P21240R6
Text: Freescale Semiconductor Technical Data MRF5P21240 Rev. 2, 12/2004 MRF5P21240R6 replaced by MRF5P21240HR6. “H” suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110
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MRF5P21240
MRF5P21240R6
MRF5P21240HR6.
MRF5P21240R6
th 2190
TH 2190 mosfet
TH 2190 Transistor
C 2640 rf transistor
rf push pull mosfet power amplifier
AN1955
CDR33BX104AKWS
MRF5P21240
MRF5P21240HR6
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