Untitled
Abstract: No abstract text available
Text: SM33216 January 1993 Rev 0 SMART Modular Technologies SM33216 512KBit 16K x 32 CMOS Fast SRAM Module General Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package.
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SM33216
512KBit
512kilobit
64-pin,
16Kx4
512Kbit
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fm25v05-g
Abstract: FM25V05 fm25v05g
Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM25V05
512Kb
FM25VN05)
FM25V05-G
FM25VN05-G
FM25V05-GTR
FM25VN05-GTR
FM25V05
fm25v05g
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PDF
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FM24C512
Abstract: FM24C512-G FM24V05
Text: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM24C512
512Kb
512Kbit
FM24C512
512-kilobit
FM24C512,
FM24C512-G
A60003G1
FM24V05
FM24C512-G
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PDF
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RG5L51
Abstract: FM25L512 FM25L512-DG
Text: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
FM25L512,
RG5L51
RG5L51
FM25L512
FM25L512-DG
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PDF
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AT17C512A
Abstract: AT17A AT17C010A AT17LV512A AT24CXXX ATDH2200E ATDH2225 pdip 24 altera EPC1 ordering AT17C512A-10JI
Text: Features • Serial EEPROM Family for Configuring Altera FLEX Devices • Simple Interface to SRAM FPGAs • EE Programmable 512-Kbit and 1-Mbit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs • Cascadable Read Back to Support Additional Configurations or Future
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512-Kbit
AT24CXXX
0974E
08/01/xM
AT17C512A
AT17A
AT17C010A
AT17LV512A
ATDH2200E
ATDH2225
pdip 24 altera
EPC1 ordering
AT17C512A-10JI
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25V05
512Kb
FM25VN05)
FM25V05,
340282A,
25V05
A6340282A
RIC0824
25VN05
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PDF
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FM25V05
Abstract: FM25V05-G
Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25V05
512Kb
FM25VN05)
25VN05
A6340282A
RIC0824
FM25V05
FM25V05-G
FM25VN05-G
FM25V05-G
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PDF
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RG5L51
Abstract: No abstract text available
Text: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
FM25V05
RG5L51
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PDF
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PC44
Abstract: SO20 VQ44 XC17V00 XC18V00 XC2VP20 XC2VP30 XC2VP40
Text: XC18V00 Series In-System Programmable Configuration PROMs R DS026 v5.0 April 5, 2004 Features • Product Specification • Dual configuration modes - Serial Slow/Fast configuration (up to 33 MHz) - Parallel (up to 264 Mb/s at 33 MHz) In-system programmable 3.3V PROMs for
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XC18V00
DS026
XC18V04
XC18V02,
XC18V01
XC18V512,
PC44
SO20
VQ44
XC17V00
XC2VP20
XC2VP30
XC2VP40
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PDF
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echelon FT-x3
Abstract: 14255R-100 14235R-500 echelon FT-x1 echelon FT-x2 14235R-2000 FT-x3 transformer echelon FT-x3 TRANSFORMER 14255r FT-X3 14255R-100
Text: The FT 5000 Smart Transceiver is our next-generation chip for smart networks. It is the key product in the LONWORKS 2.0 platform — the next generation of LONWORKS products designed to greatly increase the power and capability of LONWORKS enabled devices, while
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14235R-2000
14235R-500
14255R-100
003-0457-01G
echelon FT-x3
14255R-100
echelon FT-x1
echelon FT-x2
FT-x3 transformer
echelon FT-x3 TRANSFORMER
14255r
FT-X3 14255R-100
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PDF
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14255R-400
Abstract: 14235R-2000 FT-x3 transformer echelon FT-x3 14255R echelon FT-x2 003-0457-01C spi eeprom flash programmer schematic neuron 5000 echelon FT-x1
Text: The FT 5000 Smart Transceiver is our next-generation chip for smart networks. It’s also a key product in the LONWORKS 2.0 platform — the next generation of LONWORKS products designed to greatly increase the power and capability of LONWORKS enabled devices, all while
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J-STD-020D
003-0457-01C
14255R-400
14235R-2000
FT-x3 transformer
echelon FT-x3
14255R
echelon FT-x2
003-0457-01C
spi eeprom flash programmer schematic
neuron 5000
echelon FT-x1
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PDF
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echelon FT-x3
Abstract: neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r
Text: Series 5000 Chip Data Book 005-0199-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of
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05-0199-01A
TPT/XF-1250
echelon FT-x3
neuron 5000
14255R-400
abstract on mini ups system circuit design
schematic diagram offline UPS
EN14908
FT5000 EVB
echelon FT-x2
HP8656B service manual
14235r
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PDF
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Untitled
Abstract: No abstract text available
Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Operating Frequency – Clock-to-Output (tV) of 6 ns Maximum • Flexible, Optimized Erase Architecture for Code + Data Storage Applications
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32-Kbyte
128-Byte
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neuron 5000
Abstract: EEPROM I2C neuron 5000 echelon FT-x3 FT-x3 transformer neuron 3120 EIA-481-B ATMEL 14305R-500 14305r 14305 Neuron 3150 programming
Text: Combined with inexpensive serial memory, the Neuron 5000 Processor provides a lower-cost, higher-performance LONWORKS solution than those based on previous-generation Neuron 3120 and Neuron 3150® chips. Neuron® 5000 Processor The Next-generation Neuron Chip for
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J-STD020D
14305R-2000
14305R-500
003-0458-1B
neuron 5000
EEPROM I2C neuron 5000
echelon FT-x3
FT-x3 transformer
neuron 3120
EIA-481-B ATMEL
14305R-500
14305r
14305
Neuron 3150 programming
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PDF
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FM24C512
Abstract: FM24C512-G
Text: Preliminary FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 10 Billion 1010 Read/Writes 45 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
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FM24C512
512Kb
512Kbit
FM24C512
512-kilobit
FM24C512,
FM24C512-G
A60003G1
FM24C512-G
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PDF
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Untitled
Abstract: No abstract text available
Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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FM25V05
512Kb
FM25VN05)
FM25V05-G
FM25VN05-G
FM25V05-GTR
FM25VN05-GTR
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PDF
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Untitled
Abstract: No abstract text available
Text: 512KBit 16K x 32 General S M 33216 CMOS Fast SRAM Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 16Kx4 high speed static RAM
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512KBit
SM33216
512kilobit
64-pin,
16Kx4
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PDF
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Untitled
Abstract: No abstract text available
Text: HN27512 Series Maintenance Only 512K 64K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27512 is a 512-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27512 features low power dissipation and high speed
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OCR Scan
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HN27512
512-Kilobit
28-pin
ns/300
DG-28)
DP-28)
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PDF
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AP28F512-120
Abstract: No abstract text available
Text: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program
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OCR Scan
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A28F512
32-LEAD
AP28F512-150
AP28F512-120
AN28F512-150
AN28F512-120
EFt-20,
ER-23,
RR-60,
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PDF
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28F512
Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
Text: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read
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OCR Scan
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28F512
28F512-120
ER-20,
ER-24,
RR-60,
AP-316,
AP-325
TP28F512-120,
TN28F512-120
28F512
28F512 input id
intel 28f512
80C186
N28F512
P28F512
80C186 programming
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PDF
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a10hc
Abstract: No abstract text available
Text: HN27C512 Series Maintenance Only 512K 64K x 8-bit UV EPROM • DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low
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OCR Scan
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HN27C512
512-Kilobit
28-pin
ns/200
a10hc
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PDF
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HN27C512G-17
Abstract: SIERA
Text: Maintenance Only HN27C512 Series 512K 64K x 8-bit UV EPROM • .DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low
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OCR Scan
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HN27C512
512-Kilobit
28-pin
ns/200
HN27C512G-17
SIERA
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PDF
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Untitled
Abstract: No abstract text available
Text: ,iJL . r ’<*i SM23216Z Feb 1992 Rev 0 SMART Modular Technologies SM23216Z 512KBit 16Kx32) CMOS Fast SRAM Module General Description Features The SM23216Z is a high performance, 512-kilobit static RAM module organized as 16K words by 32 bits in a 64-pin ZIP memory module package. The module utilizes
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OCR Scan
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SM23216Z
512KBit
16Kx32)
512-kilobit
64-pin
16Kx4
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PDF
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Untitled
Abstract: No abstract text available
Text: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read
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OCR Scan
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28F512
ER-20,
ER-24,
RR-60,
AP-316,
AP-325
TP28F512-120,
TN28F512-120
4fl5bl75
D154flbb
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PDF
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