A1177
Abstract: IT13811 EFC4606 TI 7059 marking G2 A11776
Text: EFC4606 Ordering number : ENA1177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4606 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications
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EFC4606
ENA1177
PW100s,
5000mm20
15ormation
A1177-6/6
A1177
IT13811
EFC4606
TI 7059
marking G2
A11776
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1123A EFC4618R-P N-Channel Power MOSFET http://onsemi.com 24V, 6A, 23mΩ, Single EFCP Features • • • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Protection diode in Halogen free compliance
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ENA1123A
EFC4618R-P
5000mm2Ã
A1123-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2329A EFC6612R Power MOSFET 20V, 5.1mΩ, 23A, Dual N-Channel http://onsemi.com Features • 2.5V drive Protection diode in Halogen free compliance Common-drain type 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch
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ENA2329A
EFC6612R
5000mm2ï
A2329-6/6
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1477B EFC4612R N-Channel Power MOSFET http://onsemi.com 24V, 6A, 45mΩ, Single EFCP Features • • • • • 2.5V drive Built-in gate protection resistor Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance
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ENA1477B
EFC4612R
5000mm2Ã
A1477-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2291 EFC6611R Advance Information http://onsemi.com N-Channel Power MOSFET 12V, 27A, 3.2mΩ, Dual EFCP Features • 2.5V drive • Protection diode in • Halogen free compliance • Common-drain type • 2KV ESD HBM Applications • Lithium-ion battery charging and discharging switch
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A2291
EFC6611R
5000mm2Ã
A2291-6/6
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET http://onsemi.com 24V, 13A, 11.5mΩ, Single EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C
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ENA2151A
EFC6601R
5000mm2Ã
A2151-8/8
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a0537
Abstract: EFC4601 32608P marking G2 IT11974
Text: EFC4601 Ordering number : ENA0537 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4601 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications
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EFC4601
ENA0537
5000mm20
PW10s,
A0537-6/6
a0537
EFC4601
32608P
marking G2
IT11974
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d1296
Abstract: PA1853
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and
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PA1853
PA1853
d1296
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LTC1575
Abstract: LT1210 Design note CCD linear array LTC1433 LTC1434 MBRS130LT3 TPSD107M010R0100 TPSE686M020R0150 74HC74 quadrature dn132
Text: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products January 1997 Products of the Month Constant Frequency DC/DC Converters Offer High Efficiency at Light Loads The Adaptive PowerTM output stages selectively drive one or both of the switches at
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700kHz
1433/LTC1434
450mA
1-800-4-LINEAR
LTC1575
LT1210 Design note
CCD linear array
LTC1433
LTC1434
MBRS130LT3
TPSD107M010R0100
TPSE686M020R0150
74HC74 quadrature
dn132
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CTX-01-13033-X2
Abstract: CTX-01-13033 LT1210 as buffer LT1210 2n2907a spice MARCON NH capacitor MIDCOM 671-7783 Laptop AC adapter 19V LT1210 Design note pico amp meter
Text: LINEAR TECHNOLOGY MAY 1996 IN THIS ISSUE . . . COVER ARTICLE LT 1307 Micropower DC/DC Converter Eliminates Electrolytic Capacitors . 1 Steve Pietkiewicz Issue Highlights . 2 LTC in the News . 2 DESIGN FEATURES
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LT1210:
35MHz
LT1207:
60MHz,
250mA
400ksps
12-Bit
LT1462
1-800-4-LINEAR
CTX-01-13033-X2
CTX-01-13033
LT1210 as buffer
LT1210
2n2907a spice
MARCON NH capacitor
MIDCOM 671-7783
Laptop AC adapter 19V
LT1210 Design note
pico amp meter
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2179 EFC4619R Power MOSFET 24V, 6A, 23m N-Channel Dual EFCP ht t p://onse m i.c om Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch
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ENA2179
EFC4619R
5000mm2Ã
A2179-9/9
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Untitled
Abstract: No abstract text available
Text: EFC4618R-P Ordering number : ENA1123A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4618R-P General-Purpose Switching Device Applications Features • • • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type
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EFC4618R-P
ENA1123A
5000mm2Ã
A1123-7/7
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A1262
Abstract: No abstract text available
Text: EFC4601R Ordering number : ENA1262A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4601R General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications
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ENA1262A
EFC4601R
PW10s,
5000mm20
A1262-6/6
A1262
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M-Typ
Abstract: KPA1816 5000mm2
Text: IC IC SMD Type MOS Field Effect Transistor KPA1816 TSSOP-8 Features Unit: mm 1.8V drive available Low on-state resistance RDS on 1 = 15 m TYP. (VGS = -4.5 V, ID = -4.5 A) RDS(on)2 = 16 m TYP. (VGS = -4.0 V, ID = -4.5 A) RDS(on)3 = 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A)
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KPA1816
M-Typ
KPA1816
5000mm2
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a1262
Abstract: EFC4601R TA72
Text: EFC4601R Ordering number : ENA1262 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4601R General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications
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EFC4601R
ENA1262
PW10s,
5000mm20
A1262-6/6
a1262
EFC4601R
TA72
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Untitled
Abstract: No abstract text available
Text: EFC4612R Ordering number : ENA1477 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4612R General-Purpose Switching Device Applications Features • • • • 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch.
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EFC4612R
ENA1477
PW10s,
5000mm2
A1477-5/5
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A1508
Abstract: 62310P EFC4611
Text: EFC4611 Ordering number : ENA1508 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4611 General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications
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EFC4611
ENA1508
PW100s,
5000mm2
A1508-5/5
A1508
62310P
EFC4611
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A2151
Abstract: No abstract text available
Text: EFC6601R Ordering number : ENA2151 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance
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ENA2151
EFC6601R
PW10s,
5000mm2
A2151-8/8
A2151
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A1477
Abstract: EFC4612R RG2004
Text: EFC4612R 注文コード No. N A 1 4 7 7 三洋半導体データシート N EFC4612R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 2.5V 駆動。 ・ ゲート保護用抵抗内蔵。 ・ LiB 充放電スイッチ用途に最適。
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EFC4612R
5000mm2
5000mm2
IT14721
A1477-4/5
IT14722
A1477-5/5
A1477
EFC4612R
RG2004
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A1629
Abstract: EFC4615R EFCP1515-4CC-037 62310P S10ms 2RG3 IT11565 TA7060
Text: EFC4615R 注文コード No. N A 1 6 2 9 三洋半導体データシート N EFC4615R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 2.5V 駆動 ・ LiB 充放電スイッチ用途に最適
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EFC4615R
5000mm
EFCP1515-4CC-037
62310PF
TC-00002379
A1629-1/5
IT15257
5000mm2
IT15534
A1629
EFC4615R
EFCP1515-4CC-037
62310P
S10ms
2RG3
IT11565
TA7060
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A2151
Abstract: data A2151 EFC6601R-TR Sanyo battery a215-15 ENA2151A EFCP2718-6CE-020
Text: EFC6601R Ordering number : ENA2151A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance
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ENA2151A
EFC6601R
PW10s,
5000mm2
A2151-8/8
A2151
data A2151
EFC6601R-TR
Sanyo battery
a215-15
ENA2151A
EFCP2718-6CE-020
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D44VH4
Abstract: D45VH4 similar LT1497CS LT1497CS8 LT1207 LT1229 LT1497 D45VH4 671-7807
Text: LT1497 Dual 125mA, 50MHz Current Feedback Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Minimum Output Current: ±125mA Maximum Supply Current per Amp: 7mA, VS = ±5V Bandwidth: 50MHz, VS = ± 15V Slew Rate: 900V/µs, VS = ±15V
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LT1497
125mA,
50MHz
125mA
50MHz,
16-Pin
100mA,
000pF,
LT1207
D44VH4
D45VH4 similar
LT1497CS
LT1497CS8
LT1207
LT1229
LT1497
D45VH4
671-7807
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1497G
Abstract: No abstract text available
Text: LT1497 r j u n e TECHNOLOGY Dual 125mA, 50MHz Current Feedback Amplifier F6RTUR6S D€SCRIPTIOfl • Minimum Output Current: ±125mA ■ Maximum Supply Current per Amp: 7mA, V§ = ±5V ■ Bandwidth: 50MHz, VS =±15V ■ Slew Rate: 900V/|is,Vs = ±15V ■ Wide Supply Range: Vs = +2.5V to + 15V
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LT1497
125mA,
50MHz
LT1497
100mA
70dBc
16-pin
000pF,
LT1207
1497G
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ECG1078
Abstract: 0003510
Text: bbS3TSa ODGBTlb h 17E PHILIPS E C G INC ECG1078 j-74-05-01 6.5W AF POWER AMPLIFIER semiconductors FEATURES ; Dcvfc* Mounting Hof« Layout Oim«n»iön* • Output power 6.5 W at T.H.D 10% . • Low distortion. • Self centering bias. • High gain. D ESC R IP T IO N
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ECG1078
j-74-05-01
CG1078
ECG1078
0003510
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