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    Infineon Technologies AG IMD701AQ064X128AAXUMA1

    Motor / Motion / Ignition Controllers & Drivers CONTROLLER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IMD701AQ064X128AAXUMA1 1,903
    • 1 $6.79
    • 10 $5.24
    • 100 $4.42
    • 1000 $4.21
    • 10000 $3.8
    		Buy Now

    Infineon Technologies AG IMD700AQ064X128AAXUMA1

    Motor / Motion / Ignition Controllers & Drivers CONTROLLER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IMD700AQ064X128AAXUMA1 47
    • 1 $6.55
    • 10 $4.92
    • 100 $4.08
    • 1000 $3.61
    • 10000 $3.5
    		Buy Now

    Daniels Manufacturing Corporation (DMC) X128

    Crimpers / Crimping Tools Die Set
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics X128
    • 1 $268.38
    • 10 $253.5
    • 100 $253.5
    • 1000 $253.5
    • 10000 $253.5
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    4X128 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gw 360

    Abstract: No abstract text available
    Text: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,


    Original     		EDI2GG432128V 4x128Kx32 EDI2GG432128VxxD 4x128Kx32. 14mmx20mm EDI2GG432128V95D* EDI2GG432128V10D* EDI2GG432128V11D EDI2GG432128V12D gw 360 PDF

    128*64

    Abstract: transistor GW 93 H GW 94 H
    Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address


    Original     		EDI2KG464128V 4x128Kx64, 4x128Kx64 EDI2KG64128VxxD 01581USA EDI2KG464128V 128*64 transistor GW 93 H GW 94 H PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    Original     		EDI9F416128C 4x128Kx16 100ns EDI9F416128LP EDI9F416128C70BNC EDI9F416128C70BNI. 01581USA PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,


    Original     		EDI2GG418128V 4x128Kx18, 4x128Kx18 EDI2GG418128VxxD2 4x128Kx64. 14mmx20mm EDI2GG418128V95D* EDI2GG418128V10D* 4x128Kx18 PDF

    EDI2CG472128V

    Abstract: No abstract text available
    Text: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)


    Original     		EDI2CG472128V 4x128Kx72, 4x128Kx72 EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm devic168 EDI2CG472128V85D2* EDI2CG472128V10D2* EDI2CG472128V12D2 EDI2CG472128V PDF

    GW 94 H

    Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
    Text: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module


    Original     		EDI2CG472128V EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm EDI2CG472128V85D2* 4x128Kx72 EDI2CG472128V10D2* EDI2CG472128V12D2 GW 94 H transistor GW 93 H EDI2CG472128V PDF

    GW 94 H

    Abstract: A015 EDI2GG464128V ICC3-400
    Text: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight


    Original     		EDI2GG464128V 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm mem050) GW 94 H A015 EDI2GG464128V ICC3-400 PDF

    14566

    Abstract: EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
    Text: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION • 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. • Random Access Memory


    Original     		EDI9F416128C 4x128Kx16 EDI9F416128C 8192K 128Kx8 100ns EDI9F416128LP) EDI9F416128LP 14566 EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC PDF

    EDI9F416128C100BNC

    Abstract: EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
    Text: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION n 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. n Random Access Memory


    Original     		EDI9F416128C 4x128Kx16 EDI9F416128C 8192K 128Kx8 100ns EDI9F416128LP) EDI9F416128LP EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG72514S-JD3 ADVANCED* 4GB - 4x128Mx72 DDR SDRAM REGISTERED ECC w/PLL DESCRIPTION FEATURES Double-data-rate architecture The W3DG72514S is a 4x128Mx72 Double Data Rate SDRAM memory module based on DDR SDRAM components. The module consists of eighteen 2Gb DDR


    Original     		W3EG72514S-JD3 4x128Mx72 DDR200 DDR266 W3DG72514S PDF

    NI TB-2640

    Abstract: 16x16 LED Matrix ribbon bte samtec TB-2641 TB-2644 16x16 LED Matrix led matrix 16X32 led matrix 16X16 led matrix 16X32 PXI-4070 8X64
    Text: High-Density Multiconfiguration Matrix Switch Modules NI PXI-2532, NI PXIe-2532 NEW! • ■ ■ 512-crosspoint matrix in a single 3U PXI slot 4x128 1-wire , 8x64 (1-wire), 4x64 (2-wire), and 8x32 (2-wire) matrix configurations Switch capacity Up to 100 VDC/100 VAC


    Original     		PXI-2532, PXIe-2532 512-crosspoint 4x128 VDC/100 000-step XP/2000/NT 2009-11146-101-D NI TB-2640 16x16 LED Matrix ribbon bte samtec TB-2641 TB-2644 16x16 LED Matrix led matrix 16X32 led matrix 16X16 led matrix 16X32 PXI-4070 8X64 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI2GG464128V-D 4x128Kx64 SYNCHRONOUS SRAM CARD EDGE DIMM, 3.3V DESCRIPTION FEATURES 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight


    Original     		EDI2GG464128V-D 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm EDI2GG464128V95D* 4x128Kx64 EDI2GG464128V10D* PDF

    EDI2GG464128V

    Abstract: No abstract text available
    Text: EDI2GG464128V 4x128Kx64 Synchronous SRAM CARD EDGE DIMM, 3.3V FEATURES • 4x128Kx64 Synchronous The EDI2GG464128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight (8) Synchronous Burst Ram Devices,


    Original     		EDI2GG464128V 4x128Kx64 EDI2GG464128VxxD 4x128Kx64. 14mmx20mm EDI2GG464128V95D* EDI2GG464128V10D* EDI2GG464128V11D EDI2GG464128V12D EDI2GG464128V PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through 4x128K x72 Synchronous, S ynchronous Burst The E D I2C G 472128V xxD2 is a S ynchronous/S ynchro­ Flow-Through A rchitecture nous Burst SRAM , 84 position Dual Key; Double High


    OCR Scan     		EDI2CG472128V 4x128Kx72, 4x128K 72128V 4x128Kx72. 700P8511111111111 11111111111111II1111111111111111 111111111111111111111111111111111II111111 050TYP. EDI2CG472128V PDF

    EDI2CG472128V

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through • 4x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin DIMM 168 contacts Module, organized as 4x128Kx72.


    OCR Scan     		EDI2CG472128V 4x128Kx72 CG472128V15D2 050TVP. EDI2CG472128V PDF

    vinavil 59

    Abstract: TME 57
    Text: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI9F416128C 4x128Kx16 100ns EDI9F416128LP) EDI9F416128C 8192K 128Kx8 vinavil 59 TME 57 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module


    OCR Scan     		EDI2CG472128V 4x128Kx72 EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm 472128V12D 472128V15D PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx64,3.3V M o d u le Features Synchronous Flow-Through • 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 • Flow-Through Architecture position Card Edge DIMM 120 contacts Module, orga­


    OCR Scan     		EDI2KG464128V 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm EDI2KG4G4128V95D* EDI2KG464128V1QD' EDI2KG464128V11D EDI2KG464128V12D PDF

    00z1

    Abstract: No abstract text available
    Text: ^EDI EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM •ELECTRONIC DESISM5, INC 4x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchro­ Flow-Through Architecture


    OCR Scan     		4x128Kx72 00z1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEk EDI9F416128C ELECTRONIC DESIGNS, NC.I 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI9F416128C 4x128Kx16 100ns EDI9F416128LP EDI9F416128C 8192K 128Kx8 EDI9F416128LP) PDF

    ED12KG

    Abstract: EDI2KG
    Text: ^EDI EDI2KG 418128V 1 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx18, 3.3V Module Features Synchronous Flow-Through 4x128K x18 Synchronous The E D I2KG 418128VxxD2 is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts module, orga­


    OCR Scan     		EDI2KG418128 4x128Kx18 4x128Kx18, EDI2KG418128VxxD2 4x128K18128V10D* EDI2KG418128V11D EDI2KG418128V12D ED12KG EDI2KG PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG418128V 1 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx18, 3.3V Module Features Synchronous Flow-Through 4x128 K x18 Synchronous The E D I2KG 418128VxxD2 is a Synchronous SRAM , 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts module, orga­


    OCR Scan     		EDI2KG418128V 4x128Kx18, 4x128 418128VxxD2 4x128Kx64. PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx64, 3 .3 V Module Features Synchronous Flow-Through 4x128K x64 Synchronous The ED I2KG64128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge DIMM 120 contacts Module, orga­


    OCR Scan     		EDI2KG464128V 4x128Kx64, 4x128K I2KG64128VxxD 4x128Kx64. EDI2KG464128V10D* 4x128Kx64 EDI2KG464128V11D EDI2KG464128V12D PDF

    9979

    Abstract: j117 J119
    Text: ^EDI EDI2KG432128V 2 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128Kx32 Synchronous The EDI2KG 432128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­


    OCR Scan     		EDI2KG432128V 4x128Kx32 4x128Kx32, EDI2KG432128VxxD 508-836-4850-Electronic EDI2KG432128V 9979 j117 J119 PDF