Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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QW-R502-340
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-C
4N70-C
4N70L-TFat
QW-R502-A89
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4N70
Abstract: utc 4n70l
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4 Amps, 700 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This
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O-220F
O-220F1
QW-R502-340
4N70
utc 4n70l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-MT
4N70K-MT
QW-R205-037
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-E Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-E
4N70-E
QW-R502-A72
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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O-220F
O-220F1
QW-R502-340
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-S
4N70-S
O-252
QW-R205-023
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K
4N70K
QW-R502-841
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-TA Power MOSFET 4.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-TA is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-TA
4N70K-TA
4N70KL-TF3-T
4N70KG-Tat
QW-R205-040
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4N70
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4 Amps, 700 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This
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O-220F
O-220F1
QW-R502-340
4N70
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K
4N70K
QW-R502-841
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-MK
4N70K-MK
4N70KL-TF3-T
4N70KG-TF3-T
QW-r205-015
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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O-220
O-220F
QW-R502-340
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4N70F
Abstract: No abstract text available
Text: 4N70T / 4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current
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HY4N70T
HY4N70FT
O-220AB
ITO-220AB
2002/95/EC
O-220AB
ITO-220AB
MIL-STD-750
HY4N70T
4N70T
4N70F
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Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 4N70D / 4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A
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HY4N70D
HY4N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
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MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1
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9800-OERF-007
9800-OERF-005
MDM 6600
mt 1389 de
2061 D nikko
AR9344
bosch AL 1115 CV
denso alternator
7805/3A
bosch al 1450 dv
CATERPILLAR 207-1560
ba 4918
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Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 4N70D / 4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A
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HY4N70D
HY4N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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O-220
IR9523
IRF9522
IRF9513
IRF9511
IRF9512
IRF9510
IRF9623
IRF9621
IRF9622
IRF 850 mosfet
MOSFET IRF 635
MOSFET IRF 630
MOSFET IRF 713
IRF N-Channel Power MOSFETs
IRF 740 N
IRF 840 MOSFET
IRF 450 MOSFET
P Channel Power MOSFET IRF
irf 540 mosfet
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4n70
Abstract: No abstract text available
Text: *•. . CjJi'&l i ' .-.Vi’ liiviOK ~-7?CH'.*h > '•: V. .TOvrtur* r ’Ai -i '.T:; iviTViSiONS DVSC.RiPT.C.-l i’v.oTrr.Tvs /i?VsvG\,e/v 4-N70 ./ey.vH is ^ ^ i? E v y A P D £ P ^mPE :> D .e ^ o X S V M K •• :_■•■ J - i z P l _ 'Aa\<\rWM 7 5 r ~
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-T-i0727)
4n70
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