4N100 MOSFET Search Results

4N100 MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

4N100 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Maximum Ratings Test Conditions VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	4N100 O-220AB O-263	PDF
4N100 Abstract: No abstract text available Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	4N100 O-220AB O-263 4N100	PDF
4N95 Abstract: 4n100 mosfet IXTM4N100 IXTM4N95 IXTP4N100 IXTP4N95 TSLA 4N95A Text: I X Y S CÔRP 1ÖE D • MböbSSb OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 □ I X Y S 4 AMPS, 950-1000 V, 3.3Q/4.0Q ' T - 3 . ci - l 3 MAXIMUM RATINGS Parameter Sym. IXTP4N95 IXTM4N95 IXTP4N100 IXTM4N100 Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1)	OCR Scan	IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 O-220 00A//JS 4N95 4n100 mosfet IXTM4N95 TSLA 4N95A	PDF
4N95 Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95 Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 EL420 O-204 4N95 4n100 mosfet ixtm4n95	PDF
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40	PDF