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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A	OCR Scan	PDF	23V8100A GM23V8100A 8/512Kx 16BIT 4D267S7 0004G21 402A7S7
72ZZZZ Abstract: GM71C4256A-80 GM71C4256A80 Text: GOLDSTAR TECHNOLOGY 4?E D INC/ 402f l ? S 7 O a O B h n • 1 I PRODUCT SPECIFICATION REV. 1 GM71C4256A GoldStar 262,144 WORDS X 4 BIT CM O S DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin C onfiguration The GM71C4256A is the new generation dynamic	OCR Scan	PDF	GM71C4256A GM71C4256A GM7lC4256Ato 0003t 72ZZZZ GM71C4256A-80 GM71C4256A80
GM71C17403b Abstract: GM71C17403BJ GM71C17403 Text: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The	OCR Scan	PDF	GM71C17403B/BL 300mil GM71C17403b GM71C17403BJ GM71C17403
KKZ 09 Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12 Text: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The	OCR Scan	PDF	GM71V 6163A/AL 42pin 400mil KKZ 09 kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Untitled Abstract: No abstract text available Text: @ LG Semicon. Co. LTD. Description Features The GMM7322010DS/SG is a 2M x 32 bits D y n am ic RA M M O D U LE w h ic h is assembled 16 pieces of 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322010DS/SG is	OCR Scan	PDF	GMM7322010DS/SG GMM7322010DS/SG GMM7322010DS GMM7322010DSG Sin125 11111111111111111111111111111111i M02A757
GM71C18160AJ7 Abstract: S1160 GM71C18160aj GM71C18160A-8 GM71C18160AJ6 GM71C18160A GM71C18160AT7 GM71C18160AJ-6 GM71C18160AJ8 Text: @ LG Semicon. Co. LTD. Description Features The GM71C18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.	OCR Scan	PDF	GM71C18160A 4D2A757 GM71C18160AJ7 S1160 GM71C18160aj GM71C18160A-8 GM71C18160AJ6 GM71C18160AT7 GM71C18160AJ-6 GM71C18160AJ8
Untitled Abstract: No abstract text available Text: @ LG Semicon. Co. LTD. Description Features The GMM7402000CS/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g	OCR Scan	PDF	GMM7402000CS/SG 7402000CS/SG GMM7402000CS/SG GMM7402000CS GMM7402000CSG 0D7217
gm71v4403 Abstract: MQ2A Text: @ LG Semicon. Co. LTD. Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 3.3V + 0.3V • Fast Access Time & Cycle Time The G M 71V 4403E/EL is the new g en eratio n dynamic RAM organized 1,048,576 words x 4 bit.	OCR Scan	PDF	GM71V4403E/EL-60 GM71V4403E/EL-70 GM71V4403E/EL-80 4403E/EL GM71V4403E/EL 300mil 20pin4026757 4D267S7 gm71v4403 MQ2A
goldstar gm16c450 Abstract: goldstar GM16c550 gm16c450 GOLDSTAR GD75188 GM16C550 GD75188 GOLDSTAR marking Text: _ . IC . GM16C550 c i 0 ic r c > c c ir a s y n c h r o n o u s c o m m u n ic a tio n s ELEMENT WITH FIFOs GOLDSTAR e l e c t r o n CO., l t d . Descriptions Features The G M 16 C 5 50 is an asynchronous communi cations element A C E that is functionally	OCR Scan	PDF	GM16C550 GM16C550is GM16C450, 16byte GM16C450. RS-232-C/D goldstar gm16c450 goldstar GM16c550 gm16c450 GOLDSTAR GD75188 GD75188 GOLDSTAR marking