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    Abstract: No abstract text available
    Text: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques


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    PDF 18160B 16-bit HY51V18160B 16-bit. 4b75Qfl8 1AD56-10-MAY9S HY51V18160BJC