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10106124-A000001LF		Amphenol Communications Solutions	PwrBlade+® Connector, Power Connectors, 10HP STB, Right Angle, Header.

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TDK Electronics B65684A0000R087 FERRITE CORE PM 9.2UH N87 2PCS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B65684A0000R087	Box	166		1	1 $26.79 10 $26.79 100 $16.987 1000 $16.987 10000 $16.987	Buy Now
Newark	B65684A0000R087	Kit	79		1	1 $21.83 10 $17.95 100 $17.66 1000 $17.66 10000 $17.66	Buy Now
TME	B65684A0000R087		64		1	1 $30.65 10 $21.91 100 $19.38 1000 $19.38 10000 $19.38	Buy Now
Intelligent Memory Limited IMC1B1A4C3A9A5I3A4A0000 EMMC, 11.5X13 153 BALL, 8GB, -40
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DigiKey	IMC1B1A4C3A9A5I3A4A0000	Tray	50		1	1 $9.26 10 $8.517 100 $8.311 1000 $6.63736 10000 $6.63736	Buy Now
Mouser Electronics	IMC1B1A4C3A9A5I3A4A0000		65			1 $8.98 10 $8.26 100 $7.23 1000 $6.67 10000 $6.44	Buy Now
Intelligent Memory Limited IMC1B1A4C3A9A5E3A4A0000 EMMC, 11.5X13 153 BALL, 8GB, -25
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DigiKey	IMC1B1A4C3A9A5E3A4A0000	Tray	50		1	1 $8.37 10 $7.704 100 $7.51775 1000 $6.00386 10000 $6.00386	Buy Now
Mouser Electronics	IMC1B1A4C3A9A5E3A4A0000		78			1 $8.12 10 $7.47 100 $6.54 1000 $6.03 10000 $5.82	Buy Now
TDK Electronics B65684A0000R027 FERRITE CORE PM 9.2UH N27 2PCS
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DigiKey	B65684A0000R027	Box	46		1	1 $23.87 10 $23.87 100 $15.128 1000 $15.128 10000 $15.128	Buy Now
TME	B65684A0000R027		14		1	1 $23.35 10 $19.54 100 $13.67 1000 $13.67 10000 $13.67	Buy Now
Intelligent Memory Limited IMSDSDA8D2A2A1I1A4A0000 MEM CARD SD MICROSD 8GB
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DigiKey	IMSDSDA8D2A2A1I1A4A0000	Bulk	20		1	1 $34.66 10 $30.757 100 $27.60363 1000 $25.85668 10000 $25.85668	Buy Now
Mouser Electronics	IMSDSDA8D2A2A1I1A4A0000		40			1 $34.36 10 $30.76 100 $26.68 1000 $25.77 10000 $25.77	Buy Now

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4A0000 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor	PDF
CompactCellTM Static RAM Abstract: No abstract text available Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS	Original	Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM	PDF
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00	PDF
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX	PDF
740-0007 Abstract: EN29GL064 6A000 Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and	Original	EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000	PDF
110R Abstract: S29GL128N Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV6402M S29GL128N 110R	PDF
TMS320AV7100 Abstract: TSB12LV41 arm processor IEC61883 TMS320 Text: Interfacing the TSB12LV41 1394 Link Layer Controller to the TMS320AV7100 DSP Embedded ARM Processor APPLICATION BRIEF: SLLA015 Randy Lawson 1394 Applications Group Mixed Signal and Logic Products BuS Solutions Group 15 December 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any	Original	TSB12LV41 TMS320AV7100 SLLA015 TMS320CAV7100 arm processor IEC61883 TMS320	PDF
M29W640DB Abstract: M29W640D M29W640DT A0-A21 6A000 Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns	Original	M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000	PDF
M420000000 Abstract: FSB073 3FE00 Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector	Original	Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00	PDF
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112	PDF
LHF12F16 Abstract: wp 146 LH28F128BFHT-PTTL75A Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A	PDF
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96	PDF
MX29LV640D Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales	Original	MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX	PDF
MX29LV640ebt Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable	Original	MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132	PDF

M25PX64 Abstract: No abstract text available Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an	Original	M25PX64 64-Mbit, 64-Kbyte 64-byte M25PX64	PDF
FTA073 Abstract: No abstract text available Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am50DL128BH FTA073--73-Ball FTA073	PDF
AM29DL640H Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640	PDF
Untitled Abstract: No abstract text available Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum	Original	M25P64 50MHz 64Mbit 512Kbit) 64Mbit) 2017h) 20-Year	PDF
Untitled Abstract: No abstract text available Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words	Original	M29DW640F TSOP48 24Mbit	PDF
A039h Abstract: 3A400 Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400	PDF
4kw marking Abstract: No abstract text available Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,	Original	F0307 4kw marking	PDF
Untitled Abstract: No abstract text available Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.	Original	Am29DL640D 16-Bit) 256od)	PDF
Untitled Abstract: No abstract text available Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations	Original	Am29LV640MH/L 16-Bit/8 128-word/256-byte 8-word/16-byte TS056 TSR056 0004h 0001h	PDF
lt 7216 Abstract: SH7060 h9700 H8108 bt 58a hitachi marking format IC 7217 Unit COUNTER IC TAD 8361 T3.15A 250V TAD 8361 Text: Hitachi Microcomputer Development Environment System SH7060 E8000 Emulator HS7060EDD81H User’s Manual ADE-702-217 Rev. 1.0 08/03/00 Hitachi, Ltd. HS7060EDD81HE A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,	Original	SH7060 E8000 HS7060EDD81H ADE-702-217 HS7060EDD81HE K28863 lt 7216 h9700 H8108 bt 58a hitachi marking format IC 7217 Unit COUNTER IC TAD 8361 T3.15A 250V TAD 8361	PDF

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4A0000 Search Results

4A0000 Result Highlights (1)

4A0000 Price and Stock

TDK Electronics B65684A0000R087

Intelligent Memory Limited IMC1B1A4C3A9A5I3A4A0000

Intelligent Memory Limited IMC1B1A4C3A9A5E3A4A0000

TDK Electronics B65684A0000R027

Intelligent Memory Limited IMSDSDA8D2A2A1I1A4A0000

4A0000 Datasheets Context Search

SAMSUNG MCP

CompactCellTM Static RAM

SA6954

Untitled

740-0007

110R

TMS320AV7100

M29W640DB

M420000000

P-TFBGA63-0911-0

LHF12F16

BA102

MX29LV640D

MX29LV640ebt

M25PX64

FTA073

AM29DL640H

Untitled

Untitled

A039h

4kw marking

Untitled

Untitled

lt 7216