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    47N60S Search Results

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    47N60S Price and Stock

    Microchip Technology Inc APT47N60SC3G

    MOSFET N-CH 600V 47A D3PAK
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    DigiKey APT47N60SC3G Tube 60
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    Newark APT47N60SC3G Bulk 40
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    Microchip Technology Inc APT47N60SC3G Tube 28 Weeks
    • 1 $14.56
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    • 100 $12.57
    • 1000 $11.54
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    TME APT47N60SC3G 1
    • 1 $21.17
    • 10 $16.65
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    Ameya Holding Limited APT47N60SC3G 199
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    NAC APT47N60SC3G Tube 26
    • 1 $13.91
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    Richardson RFPD APT47N60SC3G 3 1
    • 1 $12.99
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    Fuji Electric Co Ltd FMW47N60S1HF

    Mosfet, N Channel, 600V, 47A, To-247-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Fuji Electric FMW47N60S1HF
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    Newark FMW47N60S1HF Bulk 1
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    Win Source Electronics FMW47N60S1HF 10,234
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    Teledyne Coax Switches CCS-47N60-R

    RF Switch Commercial DC-12GHz N Latching Transfer Reverse Polarity
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    Onlinecomponents.com CCS-47N60-R 10
    • 1 $1509.64
    • 10 $478.05
    • 100 $478.05
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    Teledyne Coax Switches CS-47N60

    RF Switch Elite DC-12GHz N Failsafe Transfer
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    Onlinecomponents.com CS-47N60
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    Teledyne Coax Switches CCS-47N60

    RF Switch Commercial DC-12GHz N Latching Transfer
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    Onlinecomponents.com CCS-47N60
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    • 10 $551.5
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    Find more 47N60S price and stock on Findchips.com

    47N60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    47N60

    Abstract: 47N60S5 SPW47N60S5 P-TO247
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60 47N60S5 SPW47N60S5 P-TO247

    47N60S5

    Abstract: SPW47N60S5
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 SPW47N60S5

    47N60S5

    Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
    Text: 47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		PDF SPW47N60S5 P-TO247 SPWx0N60S5 Q67040-S4240 47N60S5 47N60S5 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s

    47N60S5

    Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
    Text: 47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		PDF SPW47N60S5 SPWx0N60S5 P-TO247 47N60S5 Q67040-S4240 SPW47N60S5 47N60S5 47N60 F47A DT 94 47n60s5 to247

    47n60s5

    Abstract: SPW47N60S5 47n60 SPW47N60 47n60s
    Text: 47N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47n60s5 SPW47N60S5 47n60 SPW47N60 47n60s

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    47N60S5

    Abstract: 47n60 SPW47N60S5
    Text: 47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances


    Original     		PDF SPW47N60S5 SPWx0N60S5 SPW47N60S5 P-TO247 47N60S5 Q67040-S4140 47N60S5 47n60

    47N60S1

    Abstract: FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4
    Text: / 47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg


    Original     		PDF FMW47N60S1HF O-247-P2 47N60S1 FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4

    47N60S1

    Abstract: 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code
    Text: / 47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6


    Original     		PDF FMH47N60S1 47N60S1 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    47N60S5

    Abstract: 47N60 SPW47N60S5 spw47n60
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 47N60 SPW47N60S5 spw47n60