Untitled
Abstract: No abstract text available
Text: GS8182D19/37BD-435M 18Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Military Temp 435 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package
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GS8182D19/37BD-435M
165-Bump
165-bump,
GS8182D36BD-435MT.
8182D1937BD
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chebyshev 3dB
Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,
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AN561
435MHz,
30MHz
450MHz)
50Ohms.
chebyshev 3dB
J32Z
AN561
SD1563
702 Z TRANSISTOR
32CZ
00724
chebyshev 0.2dB
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tda power amplifier circuit diagram
Abstract: RF amplifier CIRCUIT DIAGRAM of 433 MHz SP000296466 433 MHz Power Amplifier CRYSTAL 433 433 e xtal
Text: Product Brief TDA 7100 T h e T D A 7 1 0 0 i s a s i n g l e c h i p A S K / F S K t r a n s m i tt e r operating in the 433 to 435MHz frequency band. The IC offers a high level of integration and needs only a few external components to build a complete transmitter. The device contains a fully integrated PLL synthesizer and a high
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435MHz
B142-H9096-X-X-7600
tda power amplifier circuit diagram
RF amplifier CIRCUIT DIAGRAM of 433 MHz
SP000296466
433 MHz Power Amplifier
CRYSTAL 433
433 e xtal
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Untitled
Abstract: No abstract text available
Text: 483mm 19.03in ISOMETRIC VIEW 445mm 17.52in 32mm 1.25in O 13mm 0.5in 92mm 3.62in 10mm 0.38in 435mm 17.14in 594mm 23.4in TOP VIEW 195mm 7.69in 200mm 7.88in REAR VIEW L.S VIEW FRONT VIEW HPLW26 PART NUMBERS PAINTED TEXTURED BLACK NOTES HPLW contains 4 corner supports along with corresponding front
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483mm
445mm
435mm
594mm
195mm
200mm
HPLW26
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Untitled
Abstract: No abstract text available
Text: GS8182T19/37BD-435M 165-Bump BGA Military Temp 18Mb SigmaDDR-II+TM Burst of 2 SRAM Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR-II+ Interface • Common I/O bus • JEDEC-standard pinout and package
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GS8182T19/37BD-435M
165-Bump
165-bump,
GS8182T37BD-435MT.
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chebyshev 3dB
Abstract: transistor 81L AN561 SD1563 amplifier 250W
Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,
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AN561
435MHz,
30MHz
450MHz)
50Ohms.
chebyshev 3dB
transistor 81L
AN561
SD1563
amplifier 250W
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435M
Abstract: No abstract text available
Text: [MHF227 SERIES] For 14”,15” Color Monitor Part Name MHF227-31 MHF227-32A MHF227-63A Rating Voltage 28.0 KVD.C 26.0 KVD.C 26.0 KVD.C RT 435MΩ±15% 350MΩ±15% 360MΩ±15% R0 260 MΩ 210 MΩ 210 MΩ R1 25.7 MΩ 20.6 MΩ 0.0 MΩ R2 68.2 MΩ 54.6 MΩ
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MHF227
MHF227-31
MHF227-32A
MHF227-63A
435M
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435mhz
Abstract: 424MHz
Text: Voltage Controlled Oscillators MW500-1693 424MHz to 435MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 424MHz to 435MHz 0.7/2.5 V 6 +/- 2 dBm 10 kHz Offset -96 typ dBc/Hz 100 kHz Offset -116 (typ) dBc/Hz Frequency Pushing 1 MHz/V Frequency Pulling
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MW500-1693
424MHz
435MHz
435mhz
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hittite h435
Abstract: HMC435MS8GE HMC435MS8G H435 435MS8GE resistor 100 Ohm RF Switch H435
Text: 435MS8G / 435MS8GE v03.0607 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications Features The 435MS8G / 435MS8GE is ideal for: • Basestation Infrastructure High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • MMDS & 3.5 GHz WLL Positive Control: 0/+5V
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HMC435MS8G
435MS8GE
HMC435MS8GE
HMC435MS8G
hittite h435
H435
435MS8GE
resistor 100 Ohm
RF Switch H435
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Untitled
Abstract: No abstract text available
Text: 435MS8G / 435MS8GE v02.0805 SWITCHES - SMT 8 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications Features The 435MS8G / 435MS8GE is ideal for: • Basestation Infrastructure High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • MMDS & 3.5 GHz WLL
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HMC435MS8G
435MS8GE
HMC435MS8GE
HMC435MS8G
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H435
Abstract: HMC435 MSOP-86 435MS8GE HMC435MS8G HMC435MS8GE resistor 100 Ohm
Text: 435MS8G / 435MS8GE v05.0110 Typical Applications Features The 435MS8G E is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points
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HMC435MS8G
435MS8GE
MSOP-86
H435
HMC435
435MS8GE
HMC435MS8GE
resistor 100 Ohm
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8182T
Abstract: No abstract text available
Text: GS8182T19/37BD-435M 165-Bump BGA Military Temp 18Mb SigmaCIO DDR-II+TM Burst of 2 SRAM 435 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Military Temperature Range • 2.0 Clock Latency • Simultaneous Read and Write SigmaCIO Interface • Common I/O bus
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GS8182T19/37BD-435M
165-Bump
165-bump,
GS8182T37BD-435MT.
8182T
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Untitled
Abstract: No abstract text available
Text: 433MHz Antenna +5dBi Fibreglass Rod Features • Freq Range 430-435MHz • Omni Directional • Active gain: +5dBi • Rugged Fibre Glass Rod • VSWR <1.8 • N Connector on base with; • 2m RG58 Lead to SMA Male • Dimensions: 1200 x 20mm • U-Bolts Mounting Supplied
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433MHz
430-435MHz
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h435
Abstract: MSOP-86
Text: 435MS8G / 435MS8GE v05.0110 Typical Applications Features The 435MS8G E is ideal for: • Basestations & Repeaters High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Cellular/3G and WiMAX/4G Positive Control: 0/+5V • Infrastructure and Access Points
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HMC435MS8G
435MS8GE
MSOP-86
h435
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TB0902A
Abstract: No abstract text available
Text: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: [email protected] Web: www.taisaw.com SAW Filter 435MHz 70MHz BW SMD 5.0x5.0 mm MODEL NO.: TB0902A
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435MHz
70MHz
TB0902A
355MHz
515MHround
TB0902A
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Untitled
Abstract: No abstract text available
Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V IC = -100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC857BFA
DFN0806
-100mA
435mW
J-STD-020
BC847BFA
MIL-STD-202,
AEC-Q101
BC857FA
DS36018
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VCO190-435MT
Abstract: 072-MHz
Text: VCO Product Specification Model: VCO190-435MT Rev: A Date: 4/22/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 400 435 470 MHz X 1 1.5 -35 ° to 85 ° C Remarks Tuning Voltage: 400 MHz
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VCO190-435MT
VCO190-435MT
072-MHz
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Untitled
Abstract: No abstract text available
Text: .435M A X . .335 MAX. r~ .3 7 5 M A X . ,4-OOMAX, •017 ! oo? DIA. 9 PINS .035 *.010 . 0 9 ^ *.oo5 D IA . FULL R .200 REV, 2 [— .375 MAX. H DCO 1 4 2 2 5 6 COIL: 6 25°C RESISTANCE NOMINAL VOLTAGE_ 12,0 VDC X2 4.3 VOC MAX. G A T E T U R N -O N _ _ 7,1 VDC
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M2S776/7-010L
JMGST-12LW
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Untitled
Abstract: No abstract text available
Text: .335 MAX. .435M AX. .280 MAX. .300 MAX. I—r FU 1 ff .500 MIN. ID .031 *.003 •017!oo?DIA. 9 PINS .035 *.oio — .475 MAX. .2 5 6 *0 0 5 .100 TYP. .0 9 4 *005 DIA. .156 *005 FULL R .200 |— h ~ .375 MAX. - H COIL: 0 25°C RESISTANCE REV, 1 CUSTOMER DATA SHEET
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Untitled
Abstract: No abstract text available
Text: .435M A X . .335 MAX. .3 7 5 MAX. .4 0 0 MAX. H— 017 DIA. 9 PINS .094 *005 DIA. .156 *005 FU LL R .200 |— K - .375M A X . COIL: REV, 1 0 25°C 1600 OHMS * 10% RESISTANCE 18.0 VDC NOMINAL VOLTAGE 4.3 VDC MAX. GATE TURN-ON _ 0.5 VDC MAX. GATE TURN-OFF _
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JMGST-18PW
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Untitled
Abstract: No abstract text available
Text: .3 3 5 MAX. .435M A X . .280 MAX. .3 0 0 MAX. ex CI TT 1 .5 0 0 MIN. D J_ .0 1 7 !$ ? DIA. 9 PINS .094 *.005 DIA. FU L L R .200 I— .375 MAX. - H C O IL : @ 2 5 ° C RESISTANCE NOMINAL VO LTAG E _ MUST O PERATE _ G ATE TURN-ON _ G ATE T U R N -O FF _
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JMGAT-26MW
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display 8 segment
Abstract: No abstract text available
Text: CRQ MU13001A MU13001C 3" SINGLE DIGIT NUM BERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C ABSOLUTE MAXIMUM RATINGS 435mW
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MU13001A
MU13001C
MU13001C
435mW
200mA
Feb-98
display 8 segment
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1A 5v input 5v output regulator
Abstract: TSX-11
Text: SANYO SEMICONDUCTOR 12E DI ?cic]?G7t, CORP LA5659 M onolithic Linear 1C 2170A Logic-Controlled 5V 1A 435m A Multi Voltage Regulator The LA5659 is a multi voltage regulator IC having a main output of 5V-1A and an auxiliary output of 5V-35mA. The main output can be turned ON/OFF with enable
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LA5659
LA5659
V-35mA.
120Hz
00D3550
T-SX-11-13
1A 5v input 5v output regulator
TSX-11
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MU13001A
Abstract: MU13001C
Text: MU13001A MU13001C 3" SINGLE DIGIT NUMBERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C ABSOLUTE MAXIMUM RATINGS 435mW 200mA
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MU13001A
MU13001C
435mW
200mA
-20mA
Feb-98
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