4n60a
Abstract: 4N60-A 3VD324600YL
Text: 3VD324600YL 3VD324600YL 高压MOSFET芯片 描述 ¾ 3VD324600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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Original
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3VD324600YL
3VD324600YL
3VD324600YLN
600VMOS
O-220
4N60A
600VVGS
10VID
30VVDS
4n60a
4N60-A
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PDF
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4n60a
Abstract: 4N60-A 4n60 3VD324600YL
Text: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltage-blocking capability;
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Original
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3VD324600YL
3VD324600YL
O-220
4N60A;
3780m
4n60a
4N60-A
4n60
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PDF
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Untitled
Abstract: No abstract text available
Text: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;
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Original
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3VD324600YL
3VD324600YL
O-220
4N60A;
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PDF
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4n60a
Abstract: 3VD324600YL 600VVGS
Text: 3VD324600YL 3VD324600YL 高压MOSFET芯片 描述 Ø 3VD324600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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Original
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3VD324600YL
3VD324600YL
3VD324600YLN
600VMOS
O-220
4N60A
3780m
2780m
4n60a
600VVGS
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PDF
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