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Catalog Datasheet	MFG & Type	Document Tags	PDF
4n60a Abstract: 4N60-A 3VD324600YL Text: 3VD324600YL 3VD324600YL 高压MOSFET芯片描述 ¾ 3VD324600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	3VD324600YL 3VD324600YL 3VD324600YLN 600VMOS O-220 4N60A 600VVGS 10VID 30VVDS 4n60a 4N60-A	PDF
4n60a Abstract: 4N60-A 4n60 3VD324600YL Text: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	3VD324600YL 3VD324600YL O-220 4N60A; 3780m 4n60a 4N60-A 4n60	PDF
Untitled Abstract: No abstract text available Text: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	3VD324600YL 3VD324600YL O-220 4N60A;	PDF
4n60a Abstract: 3VD324600YL 600VVGS Text: 3VD324600YL 3VD324600YL 高压MOSFET芯片描述 Ø 3VD324600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	3VD324600YL 3VD324600YL 3VD324600YLN 600VMOS O-220 4N60A 3780m 2780m 4n60a 600VVGS	PDF