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    3SK3 Price and Stock

    Harvatek Corporation B3SK3RGB-F6C0001HOU1930

    LED RGB CHIP SMD
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    DigiKey B3SK3RGB-F6C0001HOU1930 Cut Tape 28,956 1
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    B3SK3RGB-F6C0001HOU1930 Digi-Reel 28,956 1
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    Diodes Incorporated DMPH4013SK3-13

    MOSFET P-CH 40V 55A TO252 T&R
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    DigiKey DMPH4013SK3-13 Digi-Reel 4,069 1
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    Diodes Incorporated DMPH4013SK3Q-13

    MOSFET P-CH 40V 55A TO252 T&R
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    DigiKey DMPH4013SK3Q-13 Cut Tape 2,998 1
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    Mouser Electronics DMPH4013SK3Q-13 4,565
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    Diodes Incorporated DMT15H053SK3-13

    MOSFET BVDSS: 101V~250V TO252 T&
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    DigiKey DMT15H053SK3-13 Bulk 2,258 1
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    Diodes Incorporated DMPH6023SK3-13

    MOSFET P-CHANNEL 60V 35A TO252
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    DigiKey DMPH6023SK3-13 Cut Tape 1,399 1
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    3SK3 Datasheets (95)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK30 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3SK30 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3SK30 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    3SK30 Unknown FET Data Book Scan PDF
    3SK300 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    3SK300 Hitachi Semiconductor Silicon N Channel Dual Gate MOS FET UHF - VHF RF Amplifier Original PDF
    3SK300 Renesas Technology Silicon N Channel Dual Gate MOS FET UHF/VHF RF Amplifier Original PDF
    3SK300 Renesas Technology Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier Original PDF
    3SK300ZR-TL-E Renesas Technology Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier Original PDF
    3SK301 Panasonic Silicon N-Channel MOS FET, For VHF Amplification Scan PDF
    3SK302 Panasonic Silicon N-Channel MOS FET Scan PDF
    3SK303 Panasonic Silicon N-Channel MOS FET Scan PDF
    3SK304 Panasonic Silicon N-Channel MOS for UHF Amplification Scan PDF
    3SK305 Panasonic Silicon N-Channel MOS FET, For VHF Amplification Scan PDF
    3SK306 Panasonic Silicon N-Channel MOS FET Scan PDF
    3SK307 Panasonic Silicon N-Channel MOS FET Scan PDF
    3SK308 Panasonic Silicon N-Channel MOS for UHF Amplification Scan PDF
    3SK309 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    3SK309 Hitachi Semiconductor GaAs N Channel Dual Gate MES FET UHF RF Amplifier Original PDF
    3SK309 Renesas Technology GaAs N Channel Dual Gate MES FET UHF RF Amplifier Original PDF

    3SK3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Hitachi DSA00118

    Abstract: 3SK309 l2726 21L47 327 MARKIG
    Text: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A Z 2nd. Edition November. 1996 Features • • • Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain


    Original
    3SK309 ADE-208-472 Hitachi DSA00118 3SK309 l2726 21L47 327 MARKIG PDF

    3SK318

    Abstract: DSA003643
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original
    3SK318 ADE-208-600 3SK318 DSA003643 PDF

    marking L4F

    Abstract: Hitachi DSA001652
    Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A Z 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


    Original
    3SK322 ADE-208-712A OT-143 marking L4F Hitachi DSA001652 PDF

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline


    Original
    3SK317 ADE-208-778 Hitachi DSA002759 PDF

    3SK300

    Abstract: 3SK300ZR-TL-E
    Text: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G0818-0300 Previous ADE-208-449A Rev.3.00 Aug.10.2005 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline RENESAS Package code: PLSP0004ZA-A


    Original
    3SK300 REJ03G0818-0300 ADE-208-449A) PLSP0004ZA-A 3SK300 3SK300ZR-TL-E PDF

    3SK319

    Abstract: Hitachi DSA002759
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original
    3SK319 ADE-208-602 3SK319 Hitachi DSA002759 PDF

    ADE-208-472A

    Abstract: "marking code Z" "0.6"V Hitachi DSA002750
    Text: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472A Z 2nd. Edition November. 1996 Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)


    Original
    3SK309 ADE-208-472A D-85622 ADE-208-472A "marking code Z" "0.6"V Hitachi DSA002750 PDF

    marking is "yb-"

    Abstract: Hitachi DSA002759
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original
    3SK318 ADE-208-600 marking is "yb-" Hitachi DSA002759 PDF

    Hitachi DSA002783

    Abstract: No abstract text available
    Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


    Original
    3SK321 ADE-208-711B OT-143 D-85622 Hitachi DSA002783 PDF

    3SK320

    Abstract: "GaAs N-channel Dual Gate" 3SK3
    Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO −6 V Gate 2-drain voltage


    Original
    3SK320 3SK320 "GaAs N-channel Dual Gate" 3SK3 PDF

    DUAL GATE MOS-FET

    Abstract: 3SK317 DSA003643
    Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline


    Original
    3SK317 ADE-208-778 DUAL GATE MOS-FET 3SK317 DSA003643 PDF

    3sk285

    Abstract: No abstract text available
    Text: 3SK285 High Frequency FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95


    Original
    3SK285 3SK302 3SK306 3SK302 800MHz 3sk285 PDF

    3sk285

    Abstract: No abstract text available
    Text: 3SK285 High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS 3SK301 For VHF amplification 1.5 –0.3 0.65±0.15 0.5R 0.95 1.9±0.2 4 1 3 2 +0.1 0.4 –0.05 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the conventional product.


    Original
    3SK285 3SK301 3SK305 3SK301 200MHz 3sk285 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95


    Original
    3SK285 3SK304 3SK308 3SK304 800MHz PDF

    3SK302

    Abstract: s-mini 3SK306
    Text: Panasonic H ig h F r e q u e n c y FE T s 3SK302 Tentative , 3SK306(Tentative) Silicon N -Channel MOS 3SK 302 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -e h EE


    OCR Scan
    3SK302 3SK306 3SK302 800MHz s-mini PDF

    3SK305

    Abstract: 3SK301
    Text: Panasonic H ig h F r e q u e n c y FE T s 3SK301 Tentative , 3SK305(Tentative) Silicon N -C hannel MOS 3SK301 F o rV H F amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. EE


    OCR Scan
    3SK301 3SK305 200MHz 3SK301 PDF

    3SK320

    Abstract: L 0946
    Text: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage VG1DO V V Gate 1-Source Voltage


    OCR Scan
    3SK320 961001EAC1 3SK320 L 0946 PDF

    3SK303

    Abstract: S-Mini 3SK307
    Text: Panasonic High Frequency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N-Channel MOS Unit : mm 3SK303 For VHF amplification 0 . 65 ± 0 .1 5 - 13 • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. • Downsizing of sets by mini or S-mini type package, and automatic


    OCR Scan
    3SK303 3SK307 Vds-10V, 200MHz S-Mini PDF

    MM1225

    Abstract: No abstract text available
    Text: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier HITACHI ADE-208-472 A 2nd. Edition Features • Capable of low voilage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)


    OCR Scan
    3SK309 ADE-208-472 iiJ90u MM1225 PDF

    3SK39

    Abstract: VM-10V
    Text: 3SK39 3SK39 N VHF * MOS 3S FE T /S i N-Ouuwcl MOS-FET Amplifier » /F e a tu re s •« » fin PC j f t f c t l w 'H i c h pow er gain P G • /'L o w feedback c a p a c ita n c e (C fM) • v>- M C f M M S 'f K * r * |l L . t V * i - f . / I n c o r p o r a t i n g g a te


    OCR Scan
    3SK39 Ta-25 50/iA 455kHj -200MH* 3SK39 VM-10V PDF

    3sk304

    Abstract: 3SK308 k308
    Text: Panasonic H igh F req u en cy FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. Be -EE 3 • Downsizing of sets by mini or S-mini type package, and automatic


    OCR Scan
    3SK304 3SK308 3SK304 100hA VDS-10V 800MHz k308 PDF

    3SK301

    Abstract: 3SK305
    Text: Panasonic High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS Unit : mm 3SK301 For VHF amplification 0.65±0.15 - 13 • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. • Downsizing of sets by mini or S-mini type package, and automatic


    OCR Scan
    3SK301 3SK305 VDS-10V 200MHz 3SK301 PDF

    3SK302

    Abstract: 3SK306
    Text: Panasonic H igh F req u en cy FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -EE 3 Be • Downsizing of sets by mini or S-mini type package, and automatic


    OCR Scan
    3SK302 3SK306 100hA VDS-10V 800MHz PDF

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan
    3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965 PDF