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    3N50 Search Results

    3N50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF61663N50FPV Renesas Electronics Corporation Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    R5F61633N50FPV Renesas Electronics Corporation Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion) Visit Renesas Electronics Corporation
    DF71243N50NPV#Z1 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    DF71253N50FPV#Z1 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    DF71243N50FPV#Z1 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    3N50 Price and Stock

    Vishay Semiconductors VSSAF3N50-M3-6A

    DIODE SCHOTTKY 50V 2.7A DO221AC
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    DigiKey VSSAF3N50-M3-6A Digi-Reel 4,871 1
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    • 1000 $0.15128
    • 10000 $0.15128
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    VSSAF3N50-M3-6A Cut Tape 4,871 1
    • 1 $0.47
    • 10 $0.316
    • 100 $0.47
    • 1000 $0.15128
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    Vishay Siliconix SIHD3N50D-GE3

    MOSFET N-CH 500V 3A TO252AA
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    DigiKey SIHD3N50D-GE3 Tube 2,980 1
    • 1 $1.31
    • 10 $0.825
    • 100 $1.31
    • 1000 $0.38612
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    Broadcom Limited HCPL-263N-500E

    OPTOISO 3.75KV OPEN COLL 8DIP GW
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    DigiKey HCPL-263N-500E Reel 2,000 1,000
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    EBV Elektronik HCPL-263N-500E 3,000 16 Weeks 1,000
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    Win Source Electronics HCPL-263N-500E 4,000
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    • 100 $3.2631
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    Vishay Siliconix IRFB13N50APBF

    MOSFET N-CH 500V 14A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFB13N50APBF Tube 1,543 1
    • 1 $4.46
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    • 1000 $1.59953
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    Bristol Electronics IRFB13N50APBF 1,685
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    Alpha & Omega Semiconductor AOU3N50

    MOSFET N-CH 500V 2.8A TO251-3
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    DigiKey AOU3N50 Tube 759 1
    • 1 $0.82
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    • 100 $0.38963
    • 1000 $0.29409
    • 10000 $0.21625
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    3N50 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N50 Germanium Power Devices Germanium Power Transistors Scan PDF
    3N50 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N50 Semitron Germanium Power Transistors Scan PDF
    3N50 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    3N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N50PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFP 3N50PM VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500 2.7 2.0 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    PDF 3N50PM 405B2 3N50PM

    747 diode

    Abstract: 3N50Z
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


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    PDF 3N50Z 3N50Z O-220F QW-R502-747 747 diode

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr IXFP 3N50PM (Electrically Isolated Tab) = = ≤ ≤ 500 2.7 2.0 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    PDF 3N50PM 150ons 405B2

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 = 500 V = 3.6 A = 2.0 Ω RDS on N-Channel Enhancement Mode Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings


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    PDF 3N50P 3N50P O-220 O-263 O-252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50K-MK Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


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    PDF 3N50K-MK 3N50K-MK QW-R205-036

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 3N50Z Preliminary Power MOSFET 3 A, 5 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


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    PDF 3N50Z 3N50Z O-220F QW-R502-747

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 RDS on = 500 V = 3.6 A ≤ 2.0 Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Maximum Ratings 500


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    PDF 3N50P O-220 O-263 3N50P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


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    PDF O-220F O-252 QW-R502-530

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


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    PDF O-220F O-252 QW-R502-530

    3N50P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 = 500 V = 3.6 A = 2.0 Ω RDS on N-Channel Enhancement Mode Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings


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    PDF 3N50P 3N50P O-220 O-263 O-252

    3N50P

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 RDS on = 500 V = 3.6 A ≤ 2.0 Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Maximum Ratings 500


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    PDF 3N50P O-220 O-252 3N50P

    3N50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 „ TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


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    PDF O-220F O-252 QW-R502-530 3N50

    TO36 package

    Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A


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    PDF 2N173 2N1358 2N174A 2N1549 MP1549 2N1549A 2N677 2N1553 2N1553A MP1553 TO36 package 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium

    DTG110B

    Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
    Text: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .


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    PDF 2N2082 2N2082A DTG2000 MP1550 2N1550A 2N1031 MP1554 MP1558 2N1032 2N3124 DTG110B TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400

    varta v60r

    Abstract: VARTA V170R GP60BNK-3A3H VARTA 60DK mempac 55611-702-012 varta v60r battery v60r 53310703012 QTC85
    Text: 3 Volt Lithium Cells • 3.6 Lithium ■ Nicad Computer Packs ■ NIMH Computer Packs ■ Board Mount Lithium Batteries ■ PLC Batteries ■ Laptop Batteries ■ Bar Code Scanner Batteries ■ HELPFUL HINT Whether you are looking for a replacement battery for your laptop main power or memory backup or your customers bar code scanner. We have the battery!


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    PDF BCS-17NMH 3500MAH FC-486 F-2051-1000 BCS-18 BCS-18NMH 1400MAH 2700MAH F-2049-1000-02 BCS-19 varta v60r VARTA V170R GP60BNK-3A3H VARTA 60DK mempac 55611-702-012 varta v60r battery v60r 53310703012 QTC85

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    Untitled

    Abstract: No abstract text available
    Text: 3N501 3.3V / 5.0V 13 MHz to 160 MHz PLL Clock Multiplier Description http://onsemi.com The 3N501 is a clock multiplier that will generate one of nine selectable output multiples of an input frequency via two 3−level select inputs S0, S1 . It accepts a standard fundamental mode crystal


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    PDF NB3N501 NB3N501 NB3N501/D

    3N45

    Abstract: 3N50 rfm3n P3N50
    Text: m H a r r is RFM3N45/3N50 RFP3N45/3N50 N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features TO -2Q 4AA • 3A, 4 5 0 V and 5 0 0 V • rD S on = 3 ^ • SO A is P o w er-D issip atio n Lim ited • N anosecond S w itching S peeds


    OCR Scan
    PDF RFM3N45/3N50 RFP3N45/3N50 FP3N45 FP3N50 92CS-37« 3N45 3N50 rfm3n P3N50

    3N45

    Abstract: 35165 TA9193 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TA9232 rca application notes 35169
    Text: Standard Power M O S F E T s _ File Number 1384 RFM3N45, 3N50, RFP3N45, 3N50 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors 3 A, 450 and 500 V rDs on : 3 0 Features: • SOA is p o w e r-d is s ip a tio n lim ite d


    OCR Scan
    PDF RFM3N45, RFM3N50, RFP3N45, RFP3N50 92CS-3374I RFM3N45 RFM3N50 RFP3N45 RFP3N50 92CS-35I66R1 3N45 35165 TA9193 TA9232 rca application notes 35169

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


    OCR Scan
    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan
    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    RFM3N45

    Abstract: RFM3N50 RFP3N45 RFP3N50 TA9193 TA9232 92CS-3316Z
    Text: 3 8 7 5 0 8 1 G E S O L I D Standard Power MOSFETs S T A T E ^ 3 2 , D e I b ü T S G Ö 0 0 1 0 1 1 7 I fl I ” ' T~ V RFM3N45, 3N50, RFP3N45, 3N50 File N u m b e r 1384 Power M O S Field-Effect Transistors


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    PDF RFM3N45, RFM3N50, RFP3N45, RFP3N50 RFM3N45 RFM3N50 RFP3N45 92CS-35165 92CS-15I68R1 TA9193 TA9232 92CS-3316Z

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan
    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    TO36

    Abstract: 2N511 TO41 2N1560 2N2075 2N1556A 2N1554 2N1519 2N1558 2n1980
    Text: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type VcBO y ^CEO y ^EBO V Y ce . V hFE VcES y Min. Vçe Max. @ y h A SA TU R A TIO N VOLTAGES Vc£lai ¡ e @ lg y y A A 8 / .c ° c /w 15 AMP GERMANIUM PNP Cont. 20.0 30.0 30.0 40.0 40.0 30 45 45


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    PDF 2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 MT-36 8-32NC-2A TO36 2N511 TO41 2N1560 2N2075 2N1519 2N1558 2n1980