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    3N173 Price and Stock

    Suntsu Electronics Inc STC22K33N17-32.000M

    XTAL OSC TCXO 32.0000MHZ SNWV
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    DigiKey STC22K33N17-32.000M Bulk 100 1
    • 1 $2.64
    • 10 $2.581
    • 100 $2.1508
    • 1000 $1.89942
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    Suntsu Electronics Inc STC22K33N17-38.400M

    XTAL OSC TCXO 38.4000MHZ SNWV
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    DigiKey STC22K33N17-38.400M Bulk 100 1
    • 1 $2.04
    • 10 $1.996
    • 100 $1.6637
    • 1000 $1.6162
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    SICK AG WL12-3N1731 (ALTERNATE: 1041442)

    Photoelectric Sensor, Retroreflective, Autocolimtn,0-5m, Red,640 nm, NPN, Cbl,3m | SICK WL12-3N1731
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    RS WL12-3N1731 (ALTERNATE: 1041442) Bulk 1
    • 1 $330.51
    • 10 $307.38
    • 100 $307.38
    • 1000 $307.38
    • 10000 $307.38
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    TE Connectivity DTS 23 N 17-35 PA

    DTS 23 N 17-35 PA
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    Interstate Connecting Components DTS 23 N 17-35 PA
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    TE Connectivity DTS 23 N 17-35 PN

    DTS 23 N 17-35 PN
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    Interstate Connecting Components DTS 23 N 17-35 PN
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    3N173 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N173 Calogic Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Original PDF
    3N173 Calogic Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Scan PDF
    3N173 General Instrument Short Form Data 1976 Short Form PDF
    3N173 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N173 Intersil Data Book 1981 Scan PDF
    3N173 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N173 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N173 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N173 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N173 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N173 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    3N173 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N172

    Abstract: 3N172-73 3N173 X3N172-73
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N172 3N173 3N172. 3N173. 200ns DS020 3N172-73 3N173 X3N172-73

    3N172

    Abstract: 3N172-73 3N173 X3N172-73
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N172 3N173 3N172. 3N173. -10mA 200ns 3N172-73 3N173 X3N172-73

    Untitled

    Abstract: No abstract text available
    Text: na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE TYPE 3N163 3N164 3N172 3N173 UC1764 PACKAGE BVoss Volts Min. TO-72 TO-72 TO-72 TO-72 TO-72 —40 —30


    Original     		PDF 3N163 3N164 3N172 3N173 UC1764

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
    Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net


    Original     		PDF OT-23 JFET TRANSISTOR REPLACEMENT GUIDE j201 J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET

    3N172

    Abstract: 3N173
    Text: 3N 172, 3N173 Diode Protected P-Channel Enhancement Mode MOS FET FEATURES • High Inp ut Impedance • Diode Protected Gate PIN DEVICE MAXIMUM RATINGS @ 25° C am bient unless noted 3N 172 3 N 1 Ï3 Gate to-Source Voltage -4 0 V -3 0 V V dss Drain to Source Voltage


    OCR Scan     		PDF 3N172, 3N173 3N173 10fiA -55to -10MA. -10fA 3N172

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch calodic CO RPO RATIO N V 3N172/3N173 A B S O L U T E M A X IM U M R AT IN G S Ta = 25°C unless otherwise specified FEATURES • H igh Input Im pedance • D iod e P rotecte d G ate


    OCR Scan     		PDF 3N172/3N173 3N172 3N172 3N173 -10mA 10Mtt 200ns 000CH44

    3N163

    Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
    Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172/3N173 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172 . 40V


    OCR Scan     		PDF 3N172/3N173 3N172 3N172 3N173 -10mA 200ns

    FMN1

    Abstract: No abstract text available
    Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 4000u FMN1

    3N172

    Abstract: 3N172-73 3N173 X3N172-73
    Text: caloric Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 3N172/3N173 A B S O L U T E M A X IM U M R A TIN G S T a = 2 5 °C unless otherwise specified FE A TU R E S • H igh In put Im p e d a n c e • D iod e P ro te cte d G ate


    OCR Scan     		PDF 3N172/3N173 1503Z 3N172 3N173 -10mA 200ns M43S2 3N172 3N172-73 3N173 X3N172-73

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    IT1701

    Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
    Text: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss


    OCR Scan     		PDF 43G2E71 2N4351 3N170 3N171 IT1750 3N164 3N172 3N173 -10nA IT1700 IT1701 3N163 M116 M117

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


    OCR Scan     		PDF

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


    OCR Scan     		PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


    OCR Scan     		PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    3N172

    Abstract: fet e27
    Text: P -C H A N N E L E N H A N C E M E N T M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021 " 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 533mm) 0254mm) -10mA, 3N172 fet e27

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


    OCR Scan     		PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    3N172

    Abstract: fet e27 3N173
    Text: ^/alitron Ä TFÄ [L P -C H A N N E L E N H A N C E M E N T M O S FET Devices. Inc. CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .021 " (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 533mm) 0254mm) -10mA, 3N172 fet e27 3N173