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    Abstract: No abstract text available
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch calodic CO RPO RATIO N V 3N172/3N173 A B S O L U T E M A X IM U M R AT IN G S Ta = 25°C unless otherwise specified FEATURES • H igh Input Im pedance • D iod e P rotecte d G ate


    OCR Scan     		PDF 3N172/3N173 3N172 3N172 3N173 -10mA 10Mtt 200ns 000CH44