3DD303
Abstract: 3DD30
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303B DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.
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3DD303B
3DD303
3DD30
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NPN transistor collector base and emitter
Abstract: TV power transistor datasheet 3DD303
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303C DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.
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3DD303C
NPN transistor collector base and emitter
TV power transistor datasheet
3DD303
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3DD303A
Abstract: CBO 40V CEO 25V EBO 5V 3DD303
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.
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3DD303A
3DD303A
CBO 40V CEO 25V EBO 5V
3DD303
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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