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    339 MARKING CODE TRANSISTOR Search Results

    339 MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    339 MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD CODE 339

    Abstract: 339 marking code SMD transistor signetics linear package marking 80602 LM339ADT lm339n Linear Integrated Circuit Using lm339n, AC Voltage comparator circuit diagram 9336 559 70602 transistor 2N2222 SMD configuration Quad TRANSISTOR smd
    Text: INTEGRATED CIRCUITS LM139/239/239A/339/339A/LM2901/MC 3302 Quad voltage comparator Product specification IC11 Data Handbook Philips Semiconductors 1995 Nov 27 Philips Semiconductors Product specification LM139/239/239A/339/339A /LM2901/MC3302 Quad voltage comparator


    Original     		PDF LM139/239/239A/339/339A/LM2901/MC LM139/239/239A/339/339A /LM2901/MC3302 LM139 OT108 MC3302D-T MC3302N MC3302N LM139, TRANSISTOR SMD CODE 339 339 marking code SMD transistor signetics linear package marking 80602 LM339ADT lm339n Linear Integrated Circuit Using lm339n, AC Voltage comparator circuit diagram 9336 559 70602 transistor 2N2222 SMD configuration Quad TRANSISTOR smd

    k2232

    Abstract: 2sk2232 339 marking code transistor
    Text: 2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2232 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2232 k2232 2sk2232 339 marking code transistor

    k2311

    Abstract: 339 marking code transistor 2SK2311
    Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2311 k2311 339 marking code transistor 2SK2311

    K2232

    Abstract: No abstract text available
    Text: 2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2232 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2232 K2232

    Untitled

    Abstract: No abstract text available
    Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)


    Original     		PDF 2SK2311

    K2232

    Abstract: 2SK2232 a1016 339 marking code transistor
    Text: 2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2232 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2232 K2232 2SK2232 a1016 339 marking code transistor

    K2311

    Abstract: 2SK2311
    Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)


    Original     		PDF 2SK2311 K2311 2SK2311

    TRANSISTOR SMD MARKING CODE 360

    Abstract: 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking
    Text: Philips Semiconductors Product specification Low power dual voltage comparator LM193/A/293/A/393/A/2903 DESCRIPTION PIN CONFIGURATION The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as low as 2.0mV


    Original     		PDF LM193/A/293/A/393/A/2903 LM193 XLM2903CU XLM393CU Un9351 LM193, TRANSISTOR SMD MARKING CODE 360 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking

    k2232

    Abstract: 2SK2232
    Text: 2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2232 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2232 k2232 2SK2232

    2SK2311

    Abstract: K2311
    Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)


    Original     		PDF 2SK2311 2SK2311 K2311

    J507

    Abstract: 2SJ507
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ507 J507 2SJ507

    NSBC114EDP6T5G

    Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6

    NSBA114EDP6T5G

    Abstract: NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD

    NSBC114EDP6T5G

    Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 306 marking code transistor SOT-963
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 306 marking code transistor SOT-963

    NSBA123TDP6

    Abstract: No abstract text available
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G NSBA114EDP6/D NSBA123TDP6

    NSBC124EDP6

    Abstract: NSBC144WDP6 NSBC123TDP6
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC124EDP6 NSBC144WDP6 NSBC123TDP6

    NSBA124EDP6

    Abstract: NSBA123TDP6
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA124EDP6 NSBA123TDP6

    339 marking code transistor manual

    Abstract: NSBA123TDP6
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G OT-963 NSBA114EDP6/D 339 marking code transistor manual NSBA123TDP6

    NSBC144WPDP6

    Abstract: No abstract text available
    Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBC114EPDP6T5G NSBC114EPDP6T5G NSBC114EPDP6/D NSBC144WPDP6

    339 marking code transistor

    Abstract: 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23
    Text: Central" CMPT491E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEM ICONDUCTOR CMPT491E type is an Enhanced version of the industry stan­ dard 491 NPN silicon transistor. This device is manufactured by the epitaxial planar process and


    OCR Scan     		PDF CMPT491E OT-23 500mA 02-December OT-23 339 marking code transistor 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23

    339 marking code transistor

    Abstract: BC848T BC858T BC856T BC858CT
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T; BC858T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification especially


    OCR Scan     		PDF SC-75 BC846T, BC847T BC848T BC856AT BC856BT BC857AT BC857BT BC857CT BC858AT 339 marking code transistor BC858T BC856T BC858CT

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1


    OCR Scan     		PDF Q62702-F302 Q62702-F1241 235b05 DGbb751

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		PDF G01b7b2 12-mm Q62702 F1238 OT-223 F1306 BF720 flS3b32Q Q01b7bS

    transistor 372

    Abstract: No abstract text available
    Text: SIEMENS BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = °-8 - 2 0 v Type lD ^DS(on) Package Marking 1.7 A 0.31 Q SOT-223 BSP 372 BSP 372 Vds 100 V Type BSP 372 Ordering Code Q 67000-S300


    OCR Scan     		PDF OT-223 67000-S300 E6327 transistor 372