32N170H1 Search Results

32N170H1 Price and Stock

Filter by Manufacturer


IXYS Corporation IXGX32N170H1 IGBT 1700V 75A 350W PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGX32N170H1	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGR32N170H1 IGBT 1700V 38A 200W ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGR32N170H1	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGR32N170H1		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Integrated Circuits Division IXGR32N170H1 IGBT DIS.DIODE SINGLE 20A 1700V H.VOLT ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGR32N170H1					1 $31.71106 10 $31.71106 100 $29.6365 1000 $29.6365 10000 $29.6365	Get Quote
IXYS Integrated Circuits Division IXGX32N170H1 IGBT DIS.DIODE SINGLE 32A 1700V H.VOLTAGE PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGX32N170H1					1 $34.52419 10 $34.52419 100 $32.2656 1000 $32.2656 10000 $32.2656	Get Quote

32N170H1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DH60-18A Abstract: IXGH32N170A PLUS247 Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247	PDF
IXGX32N170H1 Abstract: No abstract text available Text: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	32N170H1 PLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170H1	PDF
Untitled Abstract: No abstract text available Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	32N170H1 IXGH32N170 405B2	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1	PDF
IXGR32N170H1 Abstract: 32N170H1 Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	32N170H1 ISOPLUS247 E153432 IXGH32N170 405B2 IXGR32N170H1 32N170H1	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF