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    32DIP DATASHEET Search Results

    32DIP DATASHEET Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation

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    KM684000CLG-5L

    Abstract: KM684000C KM684000CL KM684000CLI KM684000CLI-L KM684000CL-L 512Kx8 bit Low Power CMOS Static RAM
    Text: CMOS SRAM KM684000C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF KM684000C 512Kx8 512Kx8 047MAX KM684000CLG-5L KM684000CL KM684000CLI KM684000CLI-L KM684000CL-L 512Kx8 bit Low Power CMOS Static RAM

    K6T4008C1C Family

    Abstract: K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C Family K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM

    K6T4008C1C-DB55

    Abstract: K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C-DB55 K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55

    K6T1008C2E-DB70

    Abstract: No abstract text available
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		PDF K6T1008C2E 128Kx8 0820F) K6T1008C2E-DB70

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt
    Text: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA


    Original     		PDF KM684000B 512Kx8 15/35mA 10/45mA 100pF 047MAX 002MIN KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt

    KM684000BLP

    Abstract: KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L
    Text: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF KM684000B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX KM684000BLP KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L

    KM681000ELG-5L

    Abstract: KM681000E KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7
    Text: KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		PDF KM681000E 128Kx8 0820F) KM681000ELG-5L KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7

    KM681000B

    Abstract: KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft for commercial product - Commercial Product only October 28, 1992 Preliminary 0.1 - Initial draft for Extended/Industrial Product


    Original     		PDF KM681000B 0820R) KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-TB55
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		PDF K6T1008C2E 128Kx8 0820F) K6T1008C2E-GB70 K6T1008C2E-TB55

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-GL70 K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55

    512Kx8-bit

    Abstract: K6X4008C1F-GB55 512Kx8 bit Low Power CMOS Static RAM K6X4008C1F-DF70 K6X4008C1F-GF70 MF55 Type K6X4008C1F K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q
    Text: Preliminary CMOS SRAM K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 2002 Preliminary 0.1 Revised - Added Commercial Product. November 30, 2002 Preliminary


    Original     		PDF K6X4008C1F 512Kx8 047MAX 512Kx8-bit K6X4008C1F-GB55 512Kx8 bit Low Power CMOS Static RAM K6X4008C1F-DF70 K6X4008C1F-GF70 MF55 Type K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-DL70 K6T4008C1B-GL55

    K6X4008C1F-UF55

    Abstract: K6X4008C1F 32-TSOP2-F k6x4008c1f-uf K6X4008C1F-UB55 K6X4008C1F-GF55 K6X4008C1F-DF55 K6X4008C1F-DF70 K6X4008C1F-VF55 K6X4008C1F-B
    Text: CMOS SRAM K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 2002 Preliminary 0.1 Revised - Added Commercial Product. November 30, 2002 Preliminary 1.0


    Original     		PDF K6X4008C1F 512Kx8 32-SOP-525 047MAX 002MIN K6X4008C1F-UF55 32-TSOP2-F k6x4008c1f-uf K6X4008C1F-UB55 K6X4008C1F-GF55 K6X4008C1F-DF55 K6X4008C1F-DF70 K6X4008C1F-VF55 K6X4008C1F-B

    KM684000ALP-7

    Abstract: KM684000ALP-7L KM684000ALG-7 KM684000ALGI-7L KM684000ALG-7L KM684000ALR-7L KM684000A KM684000AL KM684000ALI KM684000AL-L
    Text: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 26, 1993 Advance 0.1 Revise December 9, 1994 Preliminary 0.2 Revise - Changed Operating current


    Original     		PDF KM684000A 512Kx8 100ns 047MAX 002MIN KM684000ALP-7 KM684000ALP-7L KM684000ALG-7 KM684000ALGI-7L KM684000ALG-7L KM684000ALR-7L KM684000AL KM684000ALI KM684000AL-L

    K6X1008C2D-GF55

    Abstract: k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 K6X1008C2D
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		PDF K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF55 k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70

    sram 681000

    Abstract: KM681000ELG-5L KM681000
    Text: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


    OCR Scan     		PDF KM681000E 128Kx8 600mil) 525mil) 0820F) sram 681000 KM681000ELG-5L KM681000

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684000C Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial draft O ctober 20,1998 Prelim inary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    OCR Scan     		PDF KM684000C 512Kx8 32-DIP 004MAX1

    Untitled

    Abstract: No abstract text available
    Text: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Prelim inary 0.2 Revise - Changed Operating current Icc2; 80m A -> 90mA


    OCR Scan     		PDF KM684000A 512Kx8 100ns

    Untitled

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7th 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write; 35m A -> 45mA


    OCR Scan     		PDF KM684000B 512Kx8 15/35mA 10/45mA 10OpF

    LG tft circuit diagram

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial Drall December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35mA -» 45mA Icci at read/write : 15/35mA


    OCR Scan     		PDF KM684000B 512Kx8 15/35mA 10/45mA 100pF 525mil) 76fcQ LG tft circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Tills 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35m A -> 45m A


    OCR Scan     		PDF KM684000B 512Kx8 10/45mA 10OpF

    m68400

    Abstract: No abstract text available
    Text: K M 6 8 4 0 0 0 A Fami l y CMOS SRAM Dacuro ent T\t\ 5 1 2Kx8 bit Low Power C M O S Static RAM History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Preliminary 0.2 Revise -Changed Operating current Icc2; 80mA 90mA June 5th 1995


    OCR Scan     		PDF 100ns m68400

    M684000

    Abstract: 684000BLG
    Text: K M 68 40 00 B Fami l y D o o u m CMOS SRAM e n t T itle 51 2 K x 8 bit Low Power C M O S Static RAM Revisio n N o . H istory D raft D a te Rem ark 0.0 Initial Draft December 7th 1996 Advance 0.1 Revise -C h a n g e d Operating current by reticle revision


    OCR Scan     		PDF 15/35m 10/45mA 100pF M684000 684000BLG

    684000BLP-7L

    Abstract: 684000BLG
    Text: CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0 .0 Initial D raft December 7, 1996 Advance 0.1 Revise - Changed O perating current by reticle revision Icc at write : 35m A - » 45m A Ic c i at read/write : 1 5 /3 5 m A ^ 10/45mA


    OCR Scan     		PDF KM684000B 512Kx8 10/45mA 100pF 70/100ns 55/70ns 004MAX1 684000BLP-7L 684000BLG