t1is
Abstract: EDI8F8512C EDI8F8512C70BSC EDI8F8512LP EDI8F8512LP100B6C
Text: E L E C T R O N IC D E S IG N S SIE 1 IN C • 323011M OOOlllb TO'! B E L D EDI8F8512C ^B *dronte E D««igns D Inc. I ■ Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module ■ W 6 -2 J - /V Features The ED18F8512C is a 4096K bit CMOS Static RAM
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3E30im
EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
28Kx8
The32pin
EDI8F8512LP)
EDI8F8512C85B6C
t1is
EDI8F8512C70BSC
EDI8F8512LP
EDI8F8512LP100B6C
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8kx8 eprom pin diagram
Abstract: XTAL 12MH 80C31 F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
Text: 3230114 E L E C T R O N I C D E S I G N S INC ELECTRONIC DESIGNS IN C 85D 00184 B S D E | 323011M '37 D □□001A4 3 EDH 607C31 ¡S ri J I jaPak Family 8/12 MHz T h e fu tu r e . .to d a y . Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM
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3S3011M
607C31
80C31
32Kx8
607C31
80C31,
or32Kx8
8kx8 eprom pin diagram
XTAL 12MH
F800H
MCS-51
8kx8 sram
static ram 8KX8
INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
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Untitled
Abstract: No abstract text available
Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash
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EDI7F82048C
EDI7F82048C
128Kx8
A17-A20
Q01fl34
EDI7F82048C120BSC
EDI7F82048C150BSC
EDI7F82048C200BSC
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Untitled
Abstract: No abstract text available
Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
a256Kx16,
512Kx8
1024Kx4
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vinavil 59
Abstract: TME 57
Text: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs
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EDI9F416128C
4x128Kx16
100ns
EDI9F416128LP)
EDI9F416128C
8192K
128Kx8
vinavil 59
TME 57
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PDF
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J2-Q0
Abstract: ED184256CS j2q0 256KX4 55C10
Text: ^2EDI _ ELECTRONIC DESIGNS INC 30E D • -3230114 QOOObl? ñ ■ ElMtronlo D*i!gni Inc. • Kx4 Monolithic CMOS Static RAM Commercial and Military High Performance Megabit SRAM 256 Features The EDI84256CS/LPS/PS is a high speed, high performance, megabit density monolithic Static RAM
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EDI84256CS/LPS/PS
256KX4
EDI84256CS/LPS/PS
MIL-STD-883,
ED184256CS/L
000b22
T-46-23-10
J2-Q0
ED184256CS
j2q0
55C10
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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TME 57
Abstract: EDI8L32256C
Text: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static
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EDI8L32256C
m256Kx32
256Kx32
EDI8L32256C
EDI8L32256C15AC*
TME 57
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TME 57
Abstract: a6353 355A4 a2361
Text: m x EDI9F33256C 256Kx32 SRAM Module ELECTRONIC DESIGNS NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack
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EDI9F33256C
256Kx32
EDI9F33256C
256Kx4
EDI9F33256C20MZC
EDI9F33256C25MZC
TME 57
a6353
355A4
a2361
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PDF
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EDI9F81025C100BPC
Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Text: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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EDI9F81025C
2x512Kx8
EDI9F81025C
512Kx8
100ns.
EDI9F81025LP,
EDI9F81025C100BPC
EDI9F81025C70BPC
EDI9F81025C85BPC
EDI9F81025LP70BPC
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC SIE 1 • 3230111 ODOlOla TTO H E L D ^EDI EDI8F2432C 5 *ctro o lc Design* lne.a High Speed 750Kbit SRAM Module 32Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2432C is a high speed 750Kbit Static RAM module organized as 32Kx24. This module is constructed
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323011M
EDI8F2432C
750Kbit
32Kx24
EDI8F2432C
32Kx24.
32Kx8
I8F2432C
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EDI8C8512C35TM
Abstract: EDI8C8512C45TM EDI8C8512C55TM
Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi layered, multi-cavity ceramic substrate. This high speed
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22EDI
EDI8C8512C
512Kx8
EDI8C8512C
4096K
128Kx8
323D11M
EDI8C8512C35TM
EDI8C8512C45TM
EDI8C8512C55TM
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Untitled
Abstract: No abstract text available
Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
EDI8M8257LP)
323011M
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A17A18
Abstract: No abstract text available
Text: EDI7F8512C Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features and Erasable Read Only Memory Module. Organized as 512Kx8 bit CMOS Flash Electrically Erasable Programmable 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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OCR Scan
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
Configurat0-A16
A17-A18
EDI7F8512C120BSC
A17A18
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dram 4mx4
Abstract: ca713
Text: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit
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EDI4M44096C
EDI4M44096C
EDI4M44096C1OOZM
dram 4mx4
ca713
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PDF
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TME 57
Abstract: EDI8F32256C
Text: ^ E D I EDI8F32256C ELECTRONIC D t StGN i INC. I 256Kx32 SRAM Module Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit C M O S Static The EDI8F32256C is a high speed 8 megabit Static R AM Random A cce ss Memory module organized as 256K words by 32 bits. This module is
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EDI8F32256C
256Kx32
323D114
8F32256C
01581USA
3S30114
000217b
TME 57
EDI8F32256C
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TME 57
Abstract: No abstract text available
Text: ^EDI EDI8F16512C ELECTRONIC D£SIGHS. NC , '512Kx16 SRAM Module 512Kx16 Static RAM CMOS, Module Features The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16 bit CMOS Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory
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EDI8F16512C
512Kx16
100ns
EDI8F16512LP
EDI8F16512C
8192K
128Kx8
EDI8F16512LP)
TME 57
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PDF
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Untitled
Abstract: No abstract text available
Text: WSX EDI8L32256C 256Kx32 SRAM Module ELECTRONIC DÉ9SNS. MC PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit array. Four Chip Enables, Write Control, and Output Enable
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EDI8L32256C
256Kx32
EDI8L32256C
512Kx16
EDI8L32256C,
EDI8L32256C15AC*
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PDF
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Untitled
Abstract: No abstract text available
Text: m e n EDI4M44096C ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS Multichip Microcircuit ; The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit
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EDI4M44096C
EDI4M44096C
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ED188128
Abstract: EDI88128LPS35MC ed188128cs EDI88128CS20MI ED188128C C27A8 EDI88128CS20M EDI88128LPS25MC EDI88128CS EDI88128CS17MC
Text: m EDI88128CS x ELECTRONIC DESIGNS IN C . High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabit density monolithic Static RAM organized as 128Kx8 bits. The device has eight bi-directional input-output lines
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OCR Scan
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EDI88128CS
128Kx8
EDI88128CS
EDI88128LPS,
EDI88128LPS)
3230im
ED188128
EDI88128LPS35MC
ed188128cs
EDI88128CS20MI
ED188128C
C27A8
EDI88128CS20M
EDI88128LPS25MC
EDI88128CS17MC
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PDF
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EDI8F8257C70BPC
Abstract: No abstract text available
Text: ^EDI ELECTRONIC DESIGNS INC SIE D • 323D114 B*cfronlc D*ägn$ Ine. ■ ODOIO LL bS3 BELD EDI8F8257C T-W-23-/V Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi
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OCR Scan
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3HBD114
EDI8F8257C
256Kx8
EDI8F8257C
123Kx8
the128Kx8
The32
EDI8F8257LP)
EDI8F8257C70BPC
EDI8F8257C85BPC
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PDF
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ZD 103 ma
Abstract: ZD 103 ZD 98 66CZ ZD 22 79zd
Text: W D EDI8F64128C \ ELECTRONIC DESIGNS IN C .- 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary cache module which is ideal for use with many Intel Pentium
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OCR Scan
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EDI8F64128C
128Kx64
EDI8F64128C
128Kx8
3230im
EDI8F64128C15MMC
EDI8F64128C20MMC
EDI8F64128C25MMC
D0G17Ã
ZD 103 ma
ZD 103
ZD 98
66CZ
ZD 22
79zd
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PDF
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TME 57
Abstract: EDI8M32256C OQ29
Text: ^E D I EDI8M32256C Electronic Designs Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8M32256C is a high speed eight 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static
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OCR Scan
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EDI8M32256C
256Kx32
EDI8M32256C
256Kx4
EDI8M32256C45C6B
EDI8M32256C55C6B
32301m
TME 57
OQ29
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PDF
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