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    . 32-3011M-5M

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    KING TONY 323011M

    Socket; 12-angles,socket spanner; 3/8"; Socket bit length: 63mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 323011M 1
    • 1 $3.84
    • 10 $3.69
    • 100 $3.69
    • 1000 $3.69
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    323011M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    t1is

    Abstract: EDI8F8512C EDI8F8512C70BSC EDI8F8512LP EDI8F8512LP100B6C
    Text: E L E C T R O N IC D E S IG N S SIE 1 IN C • 323011M OOOlllb TO'! B E L D EDI8F8512C ^B *dronte E D««igns D Inc. I ■ Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module ■ W 6 -2 J - /V Features The ED18F8512C is a 4096K bit CMOS Static RAM


    OCR Scan     		3E30im EDI8F8512C 512Kx8 EDI8F8512C 4096K 128Kx8 28Kx8 The32pin EDI8F8512LP) EDI8F8512C85B6C t1is EDI8F8512C70BSC EDI8F8512LP EDI8F8512LP100B6C PDF

    8kx8 eprom pin diagram

    Abstract: XTAL 12MH 80C31 F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
    Text: 3230114 E L E C T R O N I C D E S I G N S INC ELECTRONIC DESIGNS IN C 85D 00184 B S D E | 323011M '37 D □□001A4 3 EDH 607C31 ¡S ri J I jaPak Family 8/12 MHz T h e fu tu r e . .to d a y . Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM


    OCR Scan     		3S3011M 607C31 80C31 32Kx8 607C31 80C31, or32Kx8 8kx8 eprom pin diagram XTAL 12MH F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE PDF

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash


    OCR Scan     		EDI7F82048C EDI7F82048C 128Kx8 A17-A20 Q01fl34 EDI7F82048C120BSC EDI7F82048C150BSC EDI7F82048C200BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted


    OCR Scan     		EDI8F16256C 256Kx16 EDI8F16256C 4096K-bit 256Kx4 a256Kx16, 512Kx8 1024Kx4 PDF

    vinavil 59

    Abstract: TME 57
    Text: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI9F416128C 4x128Kx16 100ns EDI9F416128LP) EDI9F416128C 8192K 128Kx8 vinavil 59 TME 57 PDF

    J2-Q0

    Abstract: ED184256CS j2q0 256KX4 55C10
    Text: ^2EDI _ ELECTRONIC DESIGNS INC 30E D • -3230114 QOOObl? ñ ■ ElMtronlo D*i!gni Inc. • Kx4 Monolithic CMOS Static RAM Commercial and Military High Performance Megabit SRAM 256 Features The EDI84256CS/LPS/PS is a high speed, high performance, megabit density monolithic Static RAM


    OCR Scan     		EDI84256CS/LPS/PS 256KX4 EDI84256CS/LPS/PS MIL-STD-883, ED184256CS/L 000b22 T-46-23-10 J2-Q0 ED184256CS j2q0 55C10 PDF

    9CTI

    Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
    Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7 PDF

    TME 57

    Abstract: EDI8L32256C
    Text: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static


    OCR Scan     		EDI8L32256C m256Kx32 256Kx32 EDI8L32256C EDI8L32256C15AC* TME 57 PDF

    TME 57

    Abstract: a6353 355A4 a2361
    Text: m x EDI9F33256C 256Kx32 SRAM Module ELECTRONIC DESIGNS NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


    OCR Scan     		EDI9F33256C 256Kx32 EDI9F33256C 256Kx4 EDI9F33256C20MZC EDI9F33256C25MZC TME 57 a6353 355A4 a2361 PDF

    EDI9F81025C100BPC

    Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
    Text: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


    OCR Scan     		EDI9F81025C 2x512Kx8 EDI9F81025C 512Kx8 100ns. EDI9F81025LP, EDI9F81025C100BPC EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC SIE 1 • 3230111 ODOlOla TTO H E L D ^EDI EDI8F2432C 5 *ctro o lc Design* lne.a High Speed 750Kbit SRAM Module 32Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2432C is a high speed 750Kbit Static RAM module organized as 32Kx24. This module is constructed


    OCR Scan     		323011M EDI8F2432C 750Kbit 32Kx24 EDI8F2432C 32Kx24. 32Kx8 I8F2432C PDF

    EDI8C8512C35TM

    Abstract: EDI8C8512C45TM EDI8C8512C55TM
    Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


    OCR Scan     		22EDI EDI8C8512C 512Kx8 EDI8C8512C 4096K 128Kx8 323D11M EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM PDF

    Untitled

    Abstract: No abstract text available
    Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


    OCR Scan     		EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 EDI8M8257LP) 323011M PDF

    A17A18

    Abstract: No abstract text available
    Text: EDI7F8512C Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features and Erasable Read Only Memory Module. Organized as 512Kx8 bit CMOS Flash Electrically Erasable Programmable 512Kx8 bits, the module contains four 128Kx8 Flash Memo­


    OCR Scan     		EDI7F8512C 512Kx8 EDI7F8512C 128Kx8 Configurat0-A16 A17-A18 EDI7F8512C120BSC A17A18 PDF

    dram 4mx4

    Abstract: ca713
    Text: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit


    OCR Scan     		EDI4M44096C EDI4M44096C EDI4M44096C1OOZM dram 4mx4 ca713 PDF

    TME 57

    Abstract: EDI8F32256C
    Text: ^ E D I EDI8F32256C ELECTRONIC D t StGN i INC. I 256Kx32 SRAM Module Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit C M O S Static The EDI8F32256C is a high speed 8 megabit Static R AM Random A cce ss Memory module organized as 256K words by 32 bits. This module is


    OCR Scan     		EDI8F32256C 256Kx32 323D114 8F32256C 01581USA 3S30114 000217b TME 57 EDI8F32256C PDF

    TME 57

    Abstract: No abstract text available
    Text: ^EDI EDI8F16512C ELECTRONIC D£SIGHS. NC , '512Kx16 SRAM Module 512Kx16 Static RAM CMOS, Module Features The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16 bit CMOS Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory


    OCR Scan     		EDI8F16512C 512Kx16 100ns EDI8F16512LP EDI8F16512C 8192K 128Kx8 EDI8F16512LP) TME 57 PDF

    Untitled

    Abstract: No abstract text available
    Text: WSX EDI8L32256C 256Kx32 SRAM Module ELECTRONIC DÉ9SNS. MC PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit array. Four Chip Enables, Write Control, and Output Enable


    OCR Scan     		EDI8L32256C 256Kx32 EDI8L32256C 512Kx16 EDI8L32256C, EDI8L32256C15AC* PDF

    Untitled

    Abstract: No abstract text available
    Text: m e n EDI4M44096C ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS Multichip Microcircuit ; The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit


    OCR Scan     		EDI4M44096C EDI4M44096C PDF

    ED188128

    Abstract: EDI88128LPS35MC ed188128cs EDI88128CS20MI ED188128C C27A8 EDI88128CS20M EDI88128LPS25MC EDI88128CS EDI88128CS17MC
    Text: m EDI88128CS x ELECTRONIC DESIGNS IN C . High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabit density monolithic Static RAM organized as 128Kx8 bits. The device has eight bi-directional input-output lines


    OCR Scan     		EDI88128CS 128Kx8 EDI88128CS EDI88128LPS, EDI88128LPS) 3230im ED188128 EDI88128LPS35MC ed188128cs EDI88128CS20MI ED188128C C27A8 EDI88128CS20M EDI88128LPS25MC EDI88128CS17MC PDF

    EDI8F8257C70BPC

    Abstract: No abstract text available
    Text: ^EDI ELECTRONIC DESIGNS INC SIE D • 323D114 B*cfronlc D*ägn$ Ine. ■ ODOIO LL bS3 BELD EDI8F8257C T-W-23-/V Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­


    OCR Scan     		3HBD114 EDI8F8257C 256Kx8 EDI8F8257C 123Kx8 the128Kx8 The32 EDI8F8257LP) EDI8F8257C70BPC EDI8F8257C85BPC PDF

    ZD 103 ma

    Abstract: ZD 103 ZD 98 66CZ ZD 22 79zd
    Text: W D EDI8F64128C \ ELECTRONIC DESIGNS IN C .- 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary cache module which is ideal for use with many Intel Pentium


    OCR Scan     		EDI8F64128C 128Kx64 EDI8F64128C 128Kx8 3230im EDI8F64128C15MMC EDI8F64128C20MMC EDI8F64128C25MMC D0G17Ã ZD 103 ma ZD 103 ZD 98 66CZ ZD 22 79zd PDF

    TME 57

    Abstract: EDI8M32256C OQ29
    Text: ^E D I EDI8M32256C Electronic Designs Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8M32256C is a high speed eight 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static


    OCR Scan     		EDI8M32256C 256Kx32 EDI8M32256C 256Kx4 EDI8M32256C45C6B EDI8M32256C55C6B 32301m TME 57 OQ29 PDF