BJT with i-v characteristics
Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available
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ECG015
OT-89
ECG015
OT-89
SS-000145-000
BJT with i-v characteristics
SSG TRANSISTOR
3362 motorola
InP HBT transistor
motorola 3362
SSG 23 TRANSISTOR
LL1608-F15NK
MCH185A180JK
MCH185A560JK
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PDF
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315oC
Abstract: ECM004
Text: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ECM004
ECM004
AP-000513-000
AP-000516-000
SS-000371-000
315oC
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ECM004
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ECM004
ECM004
AP-000513-000
AP-000516-000
SS-000371-000
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PDF
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tdma circuit diagram
Abstract: ECM806 IS136 MCH185A101JK capacitor 6032 ecshi
Text: PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM806 is a 6 X 6 mm cellular band 824 to 849MHz dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP
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ECM806
ECM806
849MHz)
IS136
IS136/AMPS
AP-000513-000
AP-000516-000
ECM806-2000
SS-000489-000
tdma circuit diagram
MCH185A101JK
capacitor 6032
ecshi
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PDF
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cdi schematics pcb
Abstract: circuit diagram of PAM transmitter and receiver dc cdi schematic diagram cdi schematic ECM014 MCH185A101JK
Text: PRELIMINARY DATA SHEET ECM014 US PCS Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features US PCS CDMA Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28dBm CDMA Power with 38% Efficiency 16dBm CDMA Power with 9% Efficiency Power-down Capability
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ECM014
28dBm
16dBm
ECM014
1910MHz
AP-000513-000
AP-000516-000
SS-000447-000
cdi schematics pcb
circuit diagram of PAM transmitter and receiver
dc cdi schematic diagram
cdi schematic
MCH185A101JK
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InP HBT transistor low noise
Abstract: 1 micro farad capacitor 100 micro farad capacitor ECG001 current amplifier note darlington InP HBT transistor
Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications n n Broadband Gain Blocks n n n n DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz
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ECG001
OT-89
ECG001
SS-000349-000
InP HBT transistor low noise
1 micro farad capacitor
100 micro farad capacitor
current amplifier note darlington
InP HBT transistor
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30 micro farad capacitor 6000 volt
Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability
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ECG014
OT-89
ECG014
OT-89
SS-000122-000
30 micro farad capacitor 6000 volt
HBT transistor
j1 05075
LL1608-F33NK
MCH185A180JK
MCH185A560JK
7953
scr 50kA
ic 76660
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ECM008
Abstract: PAM 120
Text: PRELIMINARY DATA SHEET ECM008 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM008 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ECM008
ECM008
28dBm
SS-000372-000
PAM 120
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ECM001
Abstract: ecm001is
Text: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction
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ECM001
ECM001
SS-000340-000
ecm001is
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PDF
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ECM001
Abstract: dual power supply
Text: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction
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ECM001
ECM001
AP-000513-000
AP-000516-000
SS-000340-000
dual power supply
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PDF
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cdi schematics pcb
Abstract: dc cdi schematic diagram cdi schematic HBT transistor ECM011 MCH185A101JK PAE1 ecshi
Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ECM011
28dBm
16dBm
ECM011
824MHz
849MHz
AP-000513-000
AP-000516-000
SS-000398-000
cdi schematics pcb
dc cdi schematic diagram
cdi schematic
HBT transistor
MCH185A101JK
PAE1
ecshi
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ECM001
Abstract: EIC 70
Text: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction
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ECM001
ECM001
AP-000513-000
AP-000516-000
SS-000340-000
EIC 70
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PDF
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ECM004
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ECM004
ECM004
Powe1-000
SS-000371-000
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InP HBT transistor
Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf
Text: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz
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ECG003
OT-89
ECG003
OT-89
SS-000375-000
InP HBT transistor
HBT transistor
BJT datasheet with i-v characteristics
1 micro farad capacitor
high end amplifier schematics
MOTOROLA RF TRANSISTORS srf
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ECM028
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM028 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM028 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ECM028
ECM028
28dBm
AP-000513-000
AP-000516-000
SS-000520-000
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PDF
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MCH185A101JK
Abstract: ECM011 capacitor 6032
Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ECM011
28dBm
16dBm
ECM011
824MHz
849MHz
AP-000513-000
AP-000516-000
SS-000398-000
MCH185A101JK
capacitor 6032
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PDF
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ECM028
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM028 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM028 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ECM028
ECM028
28dBm
AP-000513-000
AP-000516-000
SS-000520-000
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PDF
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ECM008
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM008 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM008 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ECM008
ECM008
28dBm
AP-000513-000
AP-000516-000
SS-000372-000
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V9637
Abstract: V9637 286-658, 286-664, 286-670, 228-8533 sensores de salida diferencial piezoresistive pressure sensor 0-30 bar presion sensor
Text: V9637 Issued / Herausgegeben / Publicado / Pubblicato 081999 Pressure Transducers Druckmeßwertgeber Anleitung Instruction Leaflet Bedienungsanleitung Hojas de instrucciones Foglio d’instruzioni Transductores de presión Trasduttori di pressione Figures / Abbildung / Figura
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V9637
V9637
V9637 286-658, 286-664, 286-670, 228-8533
sensores de salida diferencial
piezoresistive pressure sensor 0-30 bar
presion sensor
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PDF
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circuit diagram of PAM transmitter and receiver
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM068 4 X 4 mm Korean PCS 3.5V POWER AMPLIFIER MODULE Description Features The ECM068 is a 10 -pin, 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide
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ECM068
ECM068
50mfootprint.
AP-000513-000
AP-000516-000
SS-000568-000
circuit diagram of PAM transmitter and receiver
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE Features Features Korea PCS CDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28.0 dBm CDMA Power 35% CDMA Efficiency Power-down Capability Quiescent Current Control Wide Range Vref/pd
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ECM018
ECM018
1750MHz
1780MHz
AP-000513-000
AP-000516-000
SS-000446-000
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PAE1
Abstract: ECM010 2110 - 2170mhz power module
Text: PRELIMINARY DATA SHEET ECM010 WCDMA 3.5V POWER AMPLIFIER MODULE Features Features WCDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 27.0 dBm WCDMA Power 40% WCDMA Efficiency Power-down Capability Quiescent Current Control Better Efficiency at Low Power
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ECM010
ECM010
AP-000513-000
AP-000516-000
SS-000411-000
PAE1
2110 - 2170mhz power module
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