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    30N60A4 Price and Stock

    onsemi HGTG30N60A4D

    IGBT 600V 75A TO247-3
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    DigiKey HGTG30N60A4D Tube 450 1
    • 1 $8.29
    • 10 $5.651
    • 100 $5.651
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    Newark HGTG30N60A4D Bulk 450 1
    • 1 $4.85
    • 10 $4.85
    • 100 $4.85
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    onsemi PCG30N60A4W

    DIODE SCHOTTKY
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    DigiKey PCG30N60A4W Reel
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    onsemi HGTG30N60A4

    IGBT 600V 75A TO247-3
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    DigiKey HGTG30N60A4 Tube
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    Newark HGTG30N60A4 Bulk 90
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    Rochester Electronics LLC HGT1N30N60A4D

    IGBT, 96A, 600V, N-CHANNEL
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    DigiKey HGT1N30N60A4D Tube 16
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    • 100 $19.75
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    onsemi HGT1N30N60A4D

    IGBT MOD 600V 96A 255W SOT227B
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    DigiKey HGT1N30N60A4D Tube 60
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    • 100 $17.08367
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    30N60A4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30N60A4

    Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
    Text: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 TA49373 30N60A HGTP30N60A4D TA49345

    30n60a4d

    Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
    Text: 30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30n60a4d 30N60A4 TA49373 hgtp30n60a4 TA49343 LD26 TA49345 HGTG*N60A4D

    30N60A4D

    Abstract: No abstract text available
    Text: 30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D

    30N60A4D

    Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
    Text: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 ICE 280 TA49343 30N60A

    30n60a4d

    Abstract: 30n60a4 HGTG30N60A4D TA49373 HGTG*N60A4D LD26 TA49343 TA49345
    Text: 30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30n60a4d 30n60a4 TA49373 HGTG*N60A4D LD26 TA49343 TA49345

    30N60A4D

    Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
    Text: 30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		PDF HGT1N30N60A4D HGT1N30N60A4D 150oC. TA49345. 100kHz 30N60A4D mj 1504 transistor equivalent 30N60A4 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    30n60a4d

    Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
    Text: 30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		PDF HGT1N30N60A4D HGT1N30N60A4D 150oC. 100kHz 30n60a4d mj 1504 transistor equivalent TA49345 hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26

    30n60a4d

    Abstract: 30N60A4 TA49345 30N60A 30n60* 227 HGT1N30N60A4D LD26 TA49373 SOT227B
    Text: 30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input


    Original     		PDF HGT1N30N60A4D HGT1N30N60A4D 150oC. 100kHz 30n60a4d 30N60A4 TA49345 30N60A 30n60* 227 LD26 TA49373 SOT227B

    G30N60A4

    Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
    Text: i n t e 30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The 30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		PDF HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 TA49373 transistor bipolar collector current 1mA

    30N60A4D

    Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
    Text: i n t e 30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG30N60A4D HGTG30N60A4D TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d TIL-220 HGTG*N60A4D la 4830 ic